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    HEAT EXCHANGERS WITH TAPERED LIGHT SCRAPERS FOR HIGH-POWER LASER SYSTEMS AND OTHER SYSTEMS
    24.
    发明申请
    HEAT EXCHANGERS WITH TAPERED LIGHT SCRAPERS FOR HIGH-POWER LASER SYSTEMS AND OTHER SYSTEMS 审中-公开

    公开(公告)号：US20170346253A1

    公开(公告)日：2017-11-30

    申请号：US15654944

    申请日：2017-07-20

    Applicant: Raytheon Company

    Inventor： Christopher R. Koontz ,  Reynaldo Cabrera

    IPC: H01S3/04

    CPC classification number: H01S3/04 ,  G02B5/003 ,  H01S3/005 ,  H01S3/0401 ,  H01S3/0405 ,  H01S3/0407 ,  H01S3/0805

    Abstract: An apparatus includes a heat exchanger with a body having a passage through the body. The passage defines apertures on multiple sides of the body, and the passage is configured to allow optical signals to pass through the body. One or more tapered edges are at least partially around one or more of the apertures, and each tapered edge is configured to reflect optical radiation inward into the passage. One or more absorptive surfaces are within the passage, and the one or more absorptive surfaces configured to absorb the reflected optical radiation. The heat exchanger is configured to convert the absorbed optical radiation into heat, and the body further includes one or more cooling channels configured to receive coolant that absorbs the heat.

    Coolant Distribution Structure For Monolithic Microwave Integrated Circuits (MMICs)
    26.
    发明申请
    Coolant Distribution Structure For Monolithic Microwave Integrated Circuits (MMICs) 有权
    单片微波集成电路（MMIC）的冷却液分配结构

    公开(公告)号：US20160365300A1

    公开(公告)日：2016-12-15

    申请号：US14734372

    申请日：2015-06-09

    Applicant: Raytheon Company

    Inventor： Anurag Gupta ,  David H. Altman ,  Jason G. Milne ,  Christopher R. Koontz

    IPC: H01L23/473 ,  H01L23/373 ,  H01L23/367 ,  H01L23/66

    CPC classification number: H01L23/473 ,  H01L23/367 ,  H01L23/3732 ,  H01L23/66 ,  H01L2223/6683

    Abstract: A coolant distribution structure for an MMIC having: an input/output layer with an input port for receiving a coolant for transmission to coolant channels in the MMIC and an output port for exiting the coolant after such coolant has cooled active devices in the MMIC, a coolant pass-through layer to receive the coolant from the input port and having structure to inhibit such received coolant from passing directly to the output port, a coolant distribution layer for receiving coolant passing from the coolant pass-through layer and distributing such received coolant to the cooling channels to absorb heat generated by the active devices and then directing heated coolant to the coolant distribution layer and out of the porting layer via the passthrough layer. The coolant pass-through layer has a structure configured to inhibit such heated coolant from passing directly to the input port prior to such heated absorbed coolant being transmitted to the output port.

    Abstract translation: 用于MMIC的冷却剂分配结构具有：输入/输出层，其具有用于接收用于传输到MMIC中的冷却剂通道的冷却剂的输入端口和用于在这种冷却剂已经冷却了MMIC中的有源器件之后离开冷却剂的输出端口， 冷却剂通过层，以从输入端口接收冷却剂，并且具有阻止这种接收的冷却剂直接通过到输出端口的结构，冷却剂分配层，用于接收从冷却剂通过层通过的冷却剂并将这种接收到的冷却剂分配到 冷却通道以吸收由有源装置产生的热量，然后经由透气层将加热的冷却剂引导至冷却剂分配层并离开移动层。 冷却剂通过层具有被配置为在被加热的吸收的冷却剂被传输到输出端口之前禁止这种加热的冷却剂直接通到输入端口的结构。

    Coolant distribution structure for monolithic microwave integrated circuits (MMICs)
    27.
    发明授权
    Coolant distribution structure for monolithic microwave integrated circuits (MMICs) 有权
    单片微波集成电路（MMIC）的冷却液分配结构

    公开(公告)号：US09502330B1

    公开(公告)日：2016-11-22

    申请号：US14734372

    申请日：2015-06-09

    Applicant: Raytheon Company

    Inventor： Anurag Gupta ,  David H. Altman ,  Jason G. Milne ,  Christopher R. Koontz

    IPC: H01L23/473 ,  H01L23/66 ,  H01L23/373 ,  H01L23/367

    CPC classification number: H01L23/473 ,  H01L23/367 ,  H01L23/3732 ,  H01L23/66 ,  H01L2223/6683

    Abstract: A coolant distribution structure for an MMIC having: an input/output layer with an input port for receiving a coolant for transmission to coolant channels in the MMIC and an output port for exiting the coolant after such coolant has cooled active devices in the MMIC, a coolant pass-through layer to receive the coolant from the input port and having structure to inhibit such received coolant from passing directly to the output port, a coolant distribution layer for receiving coolant passing from the coolant pass-through layer and distributing such received coolant to the cooling channels to absorb heat generated by the active devices and then directing heated coolant to the coolant distribution layer and out of the porting layer via the pass-through layer. The coolant pass-through layer has a structure configured to inhibit such heated coolant from passing directly to the input port prior to such heated absorbed coolant being transmitted to the output port.

    Abstract translation: 用于MMIC的冷却剂分配结构具有：输入/输出层，其具有用于接收用于传输到MMIC中的冷却剂通道的冷却剂的输入端口和用于在这种冷却剂已经冷却了MMIC中的有源器件之后离开冷却剂的输出端口， 冷却剂通过层，以从输入端口接收冷却剂，并且具有阻止这种接收的冷却剂直接通过到输出端口的结构，冷却剂分配层，用于接收从冷却剂通过层通过的冷却剂并将这种接收到的冷却剂分配到 冷却通道以吸收由有源装置产生的热量，然后经由穿通层将加热的冷却剂引导至冷却剂分配层并移出端口层。 冷却剂通过层具有被配置为在被加热的吸收的冷却剂被传输到输出端口之前禁止这种加热的冷却剂直接通到输入端口的结构。

    Stacked wafer with coolant channels
    28.
    发明授权
    Stacked wafer with coolant channels 有权
    具有冷却剂通道的堆叠晶片

    公开(公告)号：US08921992B2

    公开(公告)日：2014-12-30

    申请号：US13804902

    申请日：2013-03-14

    Applicant: Raytheon Company

    Inventor： Christopher R. Koontz ,  Tse E. Wong ,  Jason G. Milne

    IPC: H01L23/46 ,  H01L21/50

    CPC classification number: H01L23/46 ,  H01L21/4882 ,  H01L21/50 ,  H01L23/367 ,  H01L23/473 ,  H01L23/481 ,  H01L24/80 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/80365 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2225/06589 ,  H01L2224/80

    Abstract: A wafer assembly with internal fluid channels. The assembly is fabricated by creating one or more channels in a first surface of a first semiconductor wafer and creating an oxide surface on the first surface of the first semiconductor wafer. An oxide surface is also created on a first surface of a second semiconductor wafer. The assembly is fabricated by bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the first surface of the second semiconductor wafer to create a wafer assembly and to seal the one or more channels at edges defined by the bonded first and second surfaces.

    Abstract translation: 具有内部流体通道的晶片组件。 通过在第一半导体晶片的第一表面中产生一个或多个通道并在第一半导体晶片的第一表面上产生氧化物表面来制造组件。 还在第二半导体晶片的第一表面上形成氧化物表面。 通过将第一半导体晶片的第一表面的氧化物表面结合到第二半导体晶片的第一表面的氧化物表面来制造组件，以形成晶片组件并且在由键合的限定的边缘处密封一个或多个沟道 第一和第二表面。

    SUPERLATTICE ELECTRO-OPTIC DEVICE INCLUDING RECONFIGURABLE OPTICAL ELEMENTS
    29.
    发明公开
    SUPERLATTICE ELECTRO-OPTIC DEVICE INCLUDING RECONFIGURABLE OPTICAL ELEMENTS 审中-公开

    公开(公告)号：US20240255782A1

    公开(公告)日：2024-08-01

    申请号：US18601291

    申请日：2024-03-11

    Applicant: Raytheon Company

    Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

    IPC: G02F1/017

    CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

    Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

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