DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20220344423A1

    公开(公告)日:2022-10-27

    申请号:US17432406

    申请日:2019-02-27

    Abstract: In a TFT layer forming step, first, a semiconductor layer on a resin substrate is formed by performing a semiconductor layer forming step, and subsequently a gate insulating film is formed to cover the semiconductor layer by performing a gate insulating film forming step, and then a first metal layer is formed by performing a first metal film deposition step, a first photo step, and a first etching step, and a second metal layer is formed by performing a second metal film deposition step, a second photo step, and a second etching step, thereby forming a gate layer in which the first metal layer and the second metal layer are layered.

    DISPLAY DEVICE
    22.
    发明申请

    公开(公告)号:US20220149121A1

    公开(公告)日:2022-05-12

    申请号:US17435277

    申请日:2019-03-01

    Abstract: A separation wall is provided in a frame-like shape along a peripheral edge of a through-hole in a non-display region which is defined to be in an island shape inside a display region and in which the through-hole is formed, the separation wall includes an inner metal layer provided in a frame-like shape on a first inorganic insulating film on a side of the through-hole, and a resin layer provided in a frame-like shape on the first inorganic insulating film and the inner metal layer, and the resin layer includes an inner protrusion portion provided in an eaves shape and protruding from the inner metal layer.

    DISPLAY DEVICE
    23.
    发明申请

    公开(公告)号:US20210327996A1

    公开(公告)日:2021-10-21

    申请号:US17271012

    申请日:2018-08-31

    Abstract: A display device includes a short ring TFT, wherein the short ring TFT includes a semiconductor layer, a first gate electrode, a second gate electrode, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and a second gate insulating film provided between the semiconductor layer and the second gate electrode, one of a pair of adjacent lead-out wiring lines is electrically connected to a source region of the semiconductor layer, the other of the pair of adjacent lead-out wiring lines is electrically connected to a drain region of the semiconductor layer, one of the first gate electrode and the second gate electrode is electrically connected to the source region or the drain region, and the other of the first gate electrode and the second gate electrode is electrically connected to a threshold value control wiring line.

    DISPLAY DEVICE
    24.
    发明申请

    公开(公告)号:US20210288129A1

    公开(公告)日:2021-09-16

    申请号:US17264162

    申请日:2018-07-30

    Abstract: A display device includes: a plurality of control lines; a plurality of power supply lines; a plurality of data signal lines; an oxide semiconductor layer; a first metal layer; a gate insulation film; a first inorganic insulation film; a second metal layer; a second inorganic insulation film; and a third metal layer. The oxide semiconductor layer, in a plan view, contains therein insular semiconductor lines between a plurality of drivers and a display area. The semiconductor lines cross the plurality of control lines and the plurality of power supply lines, are in contact with the plurality of control lines via an opening in a gate insulation film, are in contact with the plurality of power supply lines via an opening in the first inorganic insulation film, and have a plurality of waisted portions.

    DISPLAY DEVICE
    30.
    发明申请

    公开(公告)号:US20250063889A1

    公开(公告)日:2025-02-20

    申请号:US18935923

    申请日:2024-11-04

    Abstract: A separation wall is provided in a frame-like shape along a peripheral edge of a through-hole in a non-display region which is defined to be in an island shape inside a display region and in which the through-hole is formed, the separation wall includes an inner metal layer provided in a frame-like shape on a first inorganic insulating film on a side of the through-hole, and a resin layer provided in a frame-like shape on the first inorganic insulating film and the inner metal layer, and the resin layer includes an inner protrusion portion provided in an eaves shape and protruding from the inner metal layer.

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