公开(公告)号：US20190081081A1

公开(公告)日：2019-03-14

申请号：US15743083

申请日：2016-07-07

Applicant: SHARP KABUSHIKI KAISHA

Inventor： SHOGO MURASHIGE ,  IZUMI ISHIDA ,  TOMOHIRO KOSAKA ,  TOHRU OKABE ,  TAKESHI HARA ,  HIROHIKO NISHIKI

IPC: H01L27/12 ,  G09G3/34 ,  G02F1/1368 ,  G02B26/02 ,  H01L51/52 ,  G02F1/1362

Abstract: Disclosed is an active matrix substrate that includes a plurality of TFTs. The active matrix substrate 11 includes a substrate 100, TFTs, a light transmission film 204, and a protection film Cap4. The TFTs are provided on the substrate 100 so as to correspond to a plurality of pixels, respectively. The light transmission film 204 is provided between the TFTs and the substrate 100. The protection film Cap4 covers an end surface 204b of the light transmission film 204, the end surface 204b being not parallel with the substrate 100. The TFT includes a gate electrode, a gate insulating film, a semiconductor film, a drain electrode, and a source electrode. The protection film Cap4 is arranged between the light transmission film 204 and the semiconductor film of the TFT.

公开(公告)号：US20180210306A1

公开(公告)日：2018-07-26

申请号：US15743068

申请日：2016-07-07

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TOHRU OKABE ,  HIROHIKO NISHIKI ,  TAKESHI HARA ,  TOMOHIRO KOSAKA ,  IZUMI ISHIDA ,  SHOGO MURASHIGE

IPC: G02F1/1362 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/136286 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/133512 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/3272 ,  H01L27/3276 ,  H05B33/02 ,  H05B33/10

Abstract: An active matrix substrate includes an insulating substrate 100 in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film 201 formed in the light-shielding area on the insulating substrate 100, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film 202 formed on the light-shielding film; light-transmitting films 204 formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines 111 provided on the inorganic film; a gate insulating film 101 provided on the gate lines; thin film transistors 300 provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors 300.

公开(公告)号：US20230090537A1

公开(公告)日：2023-03-23

申请号：US17802082

申请日：2020-03-02

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Hirohide MIMURA ,  SHOGO MURASHIGE ,  YUJIRO TAKEDA

IPC: H01L27/32

Abstract: A TFT layer is provided that includes a stack of, in sequence, display wires, a protective film, a first flattening film, a metal wire layer and a second flattening film; further, a frame region has a first trench and a second trench respectively provided in the first flattening film and the second flattening film and overlapping the display wires; further, a second electrode is provided to cover the first trench and the second trench; further the protective film includes a first protective film and a third protective film formed of a silicon oxide film, and a second protective film formed of a silicon nitride film.

公开(公告)号：US20180188575A1

公开(公告)日：2018-07-05

申请号：US15741343

申请日：2016-07-07

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TOMOHIRO KOSAKA ,  TAKESHI HARA ,  TOHRU OKABE ,  IZUMI ISHIDA ,  SHOGO MURASHIGE ,  KENICHI KITOH ,  HIROHIKO NISHIKI

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02B26/00 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2203/12 ,  G09F9/00 ,  G09F9/30 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323

Abstract: An active matrix substrate includes an insulating substrate (100); a surface coating film (110) that covers at least a part of a surface of the insulating substrate; an insulating light-transmitting film (204) provided on the insulating substrate including the surface coating film; gate lines; a gate insulating film; thin film transistors; data lines; and lead-out lines (115). In a peripheral portion of the insulating substrate, an area where the insulating light-transmitting film is not provided is formed. The lead-out line is provided so as to intersect with an outer circumference end of the insulating light-transmitting film, when viewed in a direction vertical to the insulating substrate. In the area where the insulating light-transmitting film is not provided, the surface coating film is also provided on a part in contact with the outer circumference end of the insulating light-transmitting film.

公开(公告)号：US20230130571A1

公开(公告)日：2023-04-27

申请号：US17914506

申请日：2020-04-10

Applicant: SHARP KABUSHIKI KAISHA

Inventor： SHOGO MURASHIGE ,  YUJIRO TAKEDA

IPC: H10K50/844 ,  H10K59/131 ,  H10K71/00

Abstract: An organic EL display device has a frame region provided with a first dam wall and a second dam wall to surround a display region. The first dam wall and the second dam wall include: a first resin wall layer; a first conductive wall layer covering the first resin wall layer; a second resin wall layer over the first resin wall layer through the first conductive wall layer; and a second conductive wall layer covering the second resin wall layer. The second resin wall layer is positioned between: a step portion included in the first conductive wall layer and covering a peripheral end face of the first resin wall layer; and a portion included in the second conductive wall layer and corresponding to the step portion of the first conductive wall layer.

公开(公告)号：US20180254293A1

公开(公告)日：2018-09-06

申请号：US15759174

申请日：2016-09-07

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TOHRU OKABE ,  HIROHIKO NISHIKI ,  TAKESHI HARA ,  TOMOHIRO KOSAKA ,  IZUMI ISHIDA ,  SHOGO MURASHIGE

IPC: H01L27/12 ,  G02B26/02

CPC classification number: H01L27/1262 ,  G02B26/00 ,  G02B26/02 ,  G02F1/136259 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/503 ,  H01L21/477 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/3244 ,  H01L51/0096 ,  H01L51/5284 ,  H05B33/22 ,  H05B33/26

Abstract: An active matrix substrate 10 includes: an insulating substrate 110; a first conductive film 130 formed on the insulating substrate 110; a light-transmitting film 114 formed on the insulating substrate 110 so that the light-transmitting film 114 covers the first conductive film 130; a second conductive film 140 formed on the light-transmitting film 114; a first insulating layer 115 formed on the light-transmitting film 114 so that the first insulating layer 115 covers the second conductive film 140; a semiconductor film 170 formed on the first insulating layer 115; and a third conductive film 150 formed on the first insulating layer 115 and the semiconductor film 170. The first conductive film 130 and the second conductive film 140 are electrically connected via the third conductive film 150.