公开(公告)号：US09917157B2

公开(公告)日：2018-03-13

申请号：US15303231

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

公开(公告)号：US20170154905A1

公开(公告)日：2017-06-01

申请号：US15122155

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/10 ,  H01L29/423 ,  H01L21/324 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L21/3213

Abstract: This disclosure provides a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.