公开(公告)号：US10439070B2

公开(公告)日：2019-10-08

申请号：US15515004

申请日：2016-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen Yan ,  Guangcai Yuan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/786 ,  H01L29/51 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C25D11/02 ,  C25D11/04 ,  C25D11/26 ,  C25D11/34 ,  H01L21/02 ,  H01L21/443 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  C23C14/16

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

公开(公告)号：US10204922B2

公开(公告)日：2019-02-12

申请号：US15303357

申请日：2016-01-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  H01L27/15 ,  H01L33/00

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.