DISPLAY DEVICE
    21.
    发明申请

    公开(公告)号:US20230076097A1

    公开(公告)日:2023-03-09

    申请号:US17980569

    申请日:2022-11-04

    Abstract: A display device includes: a display panel; a window disposed on the display panel; a window protection layer disposed on the window; and a first adhesive layer disposed between the window and the window protection layer; wherein the first adhesive layer has a storage modulus of about 0.0317 MPa to about 0.0348 MPa, a loss modulus of about 0.0108 MPa to about 0.0120 MPa, and a tan delta value of about 0.3354 to about 0.3480 at the temperature of about 25° C. when a frequency of about 1 Hz and an axial force of about 1.0 N are applied and the first adhesive layer maintains a strain of about 1%, and the tan delta value is defined by dividing the loss modulus by the storage modulus.

    DISPLAY DEVICE
    22.
    发明申请

    公开(公告)号:US20220173354A1

    公开(公告)日:2022-06-02

    申请号:US17391507

    申请日:2021-08-02

    Abstract: Provided is a display device including a display module, a polarizing layer disposed on the display module, and an adhesive layer disposed between the display module and the polarizing layer, wherein at 60° C. and a relative humidity of from about 89% to about 96%, when a torque of 200 μN·m is applied to the adhesive layer for 10 minutes, the adhesive layer has a creep value of from about 10% to about 23%, and at 60° C. and a relative humidity of from about 89% to about 96%, the polarizing layer has a Young's modulus value of about 3000 MPa to about 5000 MPa.

    Display apparatus
    23.
    发明授权

    公开(公告)号:US11315998B2

    公开(公告)日:2022-04-26

    申请号:US16883399

    申请日:2020-05-26

    Abstract: A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

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