DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240414978A1

    公开(公告)日:2024-12-12

    申请号:US18417894

    申请日:2024-01-19

    Abstract: A display device includes a substrate, a pixel circuit layer above the substrate, and including at least one thin film transistor, and a pixel electrode above the pixel circuit layer, and electrically connected to the thin film transistor, wherein the pixel electrode includes a reflective layer, a conductive layer above the reflective layer, and an oxide layer above the conductive layer, and wherein a ratio of a thickness of the conductive layer and a thickness of the oxide layer is about 1.51 to about 2.331.

    Display device
    5.
    发明授权

    公开(公告)号:US11502270B2

    公开(公告)日:2022-11-15

    申请号:US17116282

    申请日:2020-12-09

    Abstract: A display device includes: a display panel; a window disposed on the display panel; a window protection layer disposed on the window; and a first adhesive layer disposed between the window and the window protection layer; wherein the first adhesive layer has a creep value of about 38.1876% to about 40.4371% at a temperature of about 25° C. when a stress of about 2,000 Pa is applied to the first adhesive layer for about 10 minutes, the first adhesive layer has a storage modulus of about 0.0317 MPa to about 0.0348 MPa, a loss modulus of about 0.0108 MPa to about 0.0120 MPa, and a tan delta value of about 0.3354 to about 0.3480 at the temperature of about 25° C. when a frequency of about 1 Hz and an axial force of about 1.0 N are applied and the first adhesive layer maintains a strain of about 1%, and the tan delta value is defined by dividing the loss modulus by the storage modulus.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20210066424A1

    公开(公告)日:2021-03-04

    申请号:US16837652

    申请日:2020-04-01

    Abstract: A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

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