Abstract:
A semiconductor memory includes a substrate that includes pass transistor regions, a peripheral circuit structure that includes pass transistors on the pass transistor regions, and a cell array structure on the peripheral circuit structure, the cell array structure including a plurality of cell array regions and a plurality of connection regions that are alternately arranged along a first direction. The cell array structure includes a stack structure including conductive patterns vertically stacked and correspondingly connected to the pass transistors. The stack structure includes stepwise structures on the connection regions. The connection regions of the cell array structure correspondingly overlap the pass transistor regions of the peripheral circuit structure.
Abstract:
An apparatus for generating an output signal having a waveform that is repeated every period, includes a storage configured to store values corresponding to the waveform in a portion of a period of the output signal, a counter configured to generate a first index of a sample included in the output signal, a controller configured to generate at least one control signal based on the first index and the period of the output signal, and a calculation circuit configured to generate the output signal by calculating an output from the storage based on the at least one control signal.
Abstract:
An optical apparatus includes a folding mirror configured to direct first and second illumination lights on first and second alignment marks respectively and reflect first and second reflected lights reflected from the first and second alignment marks in different horizontal directions respectively, first and second lenses arranged respectively in optical paths of the first and second reflected lights reflected from the first and second reflective surfaces of the folding mirror, first and second reflection portions configured to reflect the first and second reflected lights passing through the first and second lenses respectively, and a beam splitter prism configured to divide an illumination light incident through a first surface into the first and second illumination lights and direct to the first and second reflection portions, and transmit the first and second reflected lights reflected by the first and second reflection portions through a second surface.
Abstract:
A semiconductor device includes a first substrate structure including a substrate, circuit devices, and first bonding metal layers on the circuit devices, and a second substrate structure connected to the first substrate structure on the first substrate structure, wherein the second substrate structure includes a plate layer having a first region and a second region, gate electrodes stacked below the plate layer and extending by different lengths in a second direction in the second region, channel structures penetrating the gate electrodes and each including a channel layer, in the first region, input/output contact structures penetrating the plate layer and the gate electrodes and each including a contact conductive layer, in the second region, and second bonding metal layers connected to the first bonding metal layers, wherein a level of upper surfaces of the input/output contact structures is higher than a level of upper surfaces of the channel structures.
Abstract:
A semiconductor device includes a substrate including a cell region and a connection region. The connection region includes a plurality of pad regions and a through electrode region. A horizontal conductive layer is on the substrate. A supporter is on the horizontal conductive layer. The supporter includes a first portion in the cell region, a second portion in the plurality of pad regions, and a third portion in the through electrode region. A connection conductive layer is between the first portion and the horizontal conductive layer. A connection mold layer is between the third portion and the horizontal conductive layer. A first buried insulation layer passing through the third portion, the connection mold layer, and the horizontal conductive layer is provided. A stacked structure is on the substrate. A through electrode passing through the first buried insulation layer is provided.
Abstract:
A 3D semiconductor memory device includes a peripheral circuit structure on a first substrate, a second substrate on the peripheral circuit structure, an electrode structure on the second substrate, the electrode structure comprising stacked electrodes, and a vertical channel structure penetrating the electrode structure. The peripheral circuit structure includes a dummy interconnection structure under the second substrate. The dummy interconnection structure includes stacked interconnection lines, and a via connecting a top surface of an uppermost one of the interconnection lines to a bottom surface of the second substrate.
Abstract:
Disclosed is a three-dimensional semiconductor memory device including a substrate including a cell array region and a connection region, a stack including first and second stacks sequentially stacked on the substrate, the stack having a staircase structure on the connection region, each of the first and second stacks including conductive patterns vertically stacked on the substrate, and contact plugs disposed on the connection region and respectively coupled to the conductive patterns. A bottom surface of each contact plug is located between top and bottom surfaces of a corresponding conductive pattern. In each stack, a recess depth of each contact plug varies monotonically in a stacking direction of the conductive patterns, when measured from a top surface of a corresponding conductive pattern. The contact plugs coupled to an uppermost conductive pattern of the first stack and a lowermost conductive pattern of the second stack have discrete recess depths.
Abstract:
A particle counter may include a housing having an inlet, an outlet, and a window therebetween. The inlet and the outlet may be configured such that a fluid can be flowed therethrough. A plurality of light sources may be arranged outside the housing to provide lights of different wavelengths into the housing through the window. Sensors may be provided outside the housing to detect fractions of the lights scattered by a bubble and/or a particle in the fluid. A control part may be configured to monitor intensities of the lights detected by the sensors and to analyze a difference in intensity between the scattered lights, thereby distinguishing the particles from the bubbles in the fluid.
Abstract:
An electronic is provided. The electronic device includes a first housing, a second housing rotatably connected to the first housing, a display disposed on the front surface of the electronic device and having a partial area configured to be deformed by a rotation of the second housing relative to the first housing, a first antenna module disposed on one of the first housing and the second housing so that a communication signal is radiated in a direction identical to a direction in which the display faces the outside of the electronic device, and a radiation part included in the other or the first housing and the second housing and including an internal space that faces the first antenna module in a state in which the electronic device is folded so that the first housing and the second housing face each other, wherein the first antenna module transmits or receives the communication signal in a designated frequency band through the radiation part.
Abstract:
An integrated circuit device includes a substrate including a memory cell area and a connection area, a gate stack including a plurality of gate electrodes apart from each other in a vertical direction on the substrate, a plurality of gate connection openings arranged in the connection area to extend inward from an upper surface of the gate stack, one of the plurality of gate electrodes being exposed at a bottom surface of each of the plurality of gate connection openings, a plurality of gate connection structures respectively covering at least inner side surfaces of the plurality of gate connection openings, each of the plurality of gate connection structures being connected with the one gate electrode, and a plurality of gate contacts respectively connected to upper ends of the plurality of gate connection structures.