公开(公告)号：US20210217765A1

公开(公告)日：2021-07-15

申请号：US17024105

申请日：2020-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyoung KIM ,  Woosung YANG ,  Sejie TAKAKI

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/522 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11534 ,  G11C7/18

Abstract: A 3D semiconductor memory device includes a peripheral circuit structure on a first substrate, a second substrate on the peripheral circuit structure, an electrode structure on the second substrate, the electrode structure comprising stacked electrodes, and a vertical channel structure penetrating the electrode structure. The peripheral circuit structure includes a dummy interconnection structure under the second substrate. The dummy interconnection structure includes stacked interconnection lines, and a via connecting a top surface of an uppermost one of the interconnection lines to a bottom surface of the second substrate.

公开(公告)号：US20220139946A1

公开(公告)日：2022-05-05

申请号：US17214879

申请日：2021-03-28

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Sejie TAKAKI

IPC: H01L27/11575 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11548 ,  H01L27/11582 ,  H01L27/11573 ,  H01L25/065 ,  H01L23/535

Abstract: A semiconductor device includes a memory stack on a substrate, the memory stack including gate electrodes, insulating layers and mold layers, the mold layers being disposed at the same levels as the gate electrodes in a through electrode area, a channel structure extending vertically through the gate electrodes in a cell array area, and a dam structure disposed between the isolation insulating layers and surrounding the through electrode area in a top view. The dam structure includes a dam insulating layer having a dam shape, an inner insulating layer inside the dam insulating layer, and an outer insulating layer outside the dam insulating layer. The inner insulating layer includes first protrusions protruding in a horizontal direction, and the outer insulating layer includes second protrusions protruding in the horizontal direction.