公开(公告)号：US20220406844A1

公开(公告)日：2022-12-22

申请号：US17568866

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chungman KIM ,  Bonwon KOO ,  Dongho AHN ,  Kiyeon YANG ,  Zhe WU ,  Chang Seung LEE

IPC: H01L27/24 ,  H01L45/00

Abstract: A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC: H01L27/24 ,  H01L45/00 ,  H01L29/24

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20200257142A1

公开(公告)日：2020-08-13

申请号：US16857756

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon YANG ,  Youngsun CHOI ,  Seokho SONG ,  Jaewoong YOON ,  Choloong HAN ,  Yongsung KIM ,  Jeongyub LEE ,  Changseung LEE

IPC: G02F1/09 ,  G02B6/12 ,  G02B6/293 ,  G02F1/31 ,  G02F1/095 ,  G02B6/42 ,  G02B6/27

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US20180224574A1

公开(公告)日：2018-08-09

申请号：US15805864

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Yongsung KIM ,  Jaekwan KIM ,  Byonggwon SONG ,  Sanghoon SONG ,  Kiyeon YANG

IPC: G02B1/00 ,  G02B1/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06

CPC classification number: G02B1/002 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/5806 ,  C23C16/401 ,  C23C16/50 ,  G02B1/02 ,  G02B3/00

Abstract: A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.