公开(公告)号：US09054227B2

公开(公告)日：2015-06-09

申请号：US14472598

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L23/00 ,  A61B5/00 ,  B60C23/04 ,  B81C1/00 ,  G01L1/16 ,  G01L17/00 ,  H01L27/20 ,  H01L41/311 ,  H01L41/313 ,  H01L21/02 ,  H01L21/54 ,  H01L35/34 ,  H01L41/25 ,  A61B5/024

CPC classification number: B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

公开(公告)号：US08902123B2

公开(公告)日：2014-12-02

申请号：US13729270

申请日：2012-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Dairiki ,  Konami Izumi

IPC: H01Q21/00 ,  H01Q1/38 ,  H01Q5/00 ,  H01Q9/04 ,  H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/58 ,  H01Q23/00 ,  H01Q9/28 ,  H01L21/683 ,  H01L25/065 ,  H01L23/00 ,  H01Q13/10 ,  H01L23/66 ,  H01L23/64 ,  H01L23/538

CPC classification number: H01L25/0657 ,  H01L21/6835 ,  H01L23/48 ,  H01L23/5385 ,  H01L23/58 ,  H01L23/645 ,  H01L23/66 ,  H01L24/32 ,  H01L24/48 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/285 ,  H01Q13/10 ,  H01Q23/00 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding.

Abstract translation: 为了提供在不同基板之间形成的器件之间执行无线通信的半导体器件，并且布线的连接缺陷被减少。 具有第一天线的第一装置设置在第一基板上，具有可与第一天线连通的第二天线的第二装置设置在第二基板上，并且第一基板和第二基板彼此接合以制造 半导体器件。 第一基板和第二基板通过与其间的接合层的粘合，阳极接合或表面活性接合而彼此接合。