公开(公告)号：US20220085073A1

公开(公告)日：2022-03-17

申请号：US17422312

申请日：2019-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya ONUKI ,  Yuto YAKUBO ,  Yuki OKAMOTO ,  Seiya SAITO ,  Kiyoshi KATO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G11C11/4091 ,  G11C11/4096

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a first element layer including a first memory cell, a second element layer including a second memory cell, and a silicon substrate including a driver circuit. The first element layer is provided between the silicon substrate and the second element layer. The first memory cell includes a first transistor and a first capacitor. The second memory cell includes a second transistor and a second capacitor. One of a source and a drain of the first transistor and one of a source and a drain of the second transistor are each electrically connected to a wiring for electrical connection to the driver circuit. The wiring is in contact with a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor and is provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate.

公开(公告)号：US20220011375A1

公开(公告)日：2022-01-13

申请号：US17294780

申请日：2019-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei TAKAHASHI ,  Yuki OKAMOTO ,  Minato ITO ,  Takahiro ISHIZU

IPC: G01R31/396 ,  H02J7/00

Abstract: A semiconductor device that tests and/or monitors each of batteries provided in an assembled battery is provided. The semiconductor device includes a hysteresis comparator and a circuit, and the circuit has a function of setting a high-level side threshold voltage and a low-level side voltage of the hysteresis comparator. The circuit includes first and second capacitors. A first terminal of the first capacitor is electrically connected to a high-level side reference potential input terminal of the hysteresis comparator and a first terminal of the second capacitor is electrically connected to a low-level side reference potential input terminal of the hysteresis comparator. After a first reference potential is input to the high-level side reference potential input terminal and a second reference potential is input to the low-level side reference potential input terminal, a negative electrode of a cell is electrically connected to each second terminal of the first and second capacitors, whereby the potential of each first terminal of the first and second capacitors is changed.

公开(公告)号：US20210384906A1

公开(公告)日：2021-12-09

申请号：US17286094

申请日：2019-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei TAKAHASHI ,  Yuki OKAMOTO ,  Takahiko ISHIZU ,  Minato ITO

IPC: H03K19/0185

Abstract: A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential. The comparator compares output potentials of the first source follower and the second source follower and outputs a digital signal which expresses a high level or a low level using the first high power supply potential or the low power supply potential.

公开(公告)号：US20210256937A1

公开(公告)日：2021-08-19

申请号：US17226150

申请日：2021-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki OKAMOTO

IPC: G09G5/37 ,  G06F3/14 ,  G06N3/08 ,  G06N3/04

Abstract: To improve the display quality of a display device. To provide a method of correcting image data input to the display device. To provide a novel image correction method or an image correction system. Machine learning for a neural network correcting image data input to the display device is performed by the following method: second image data based on an image that is displayed on the display device by input of first image data to the display device is obtained; third image data is generated by obtaining a difference between the first image data and the second image data; fourth image data is generated by adding the first image data and the third image data; and a weight coefficient is updated so that output data obtained by input of the first image data to the neural network is close to the fourth image data.

公开(公告)号：US20200004357A1

公开(公告)日：2020-01-02

申请号：US16489716

申请日：2018-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shintaro HARADA ,  Yoshiyuki KUROKAWA ,  Takeshi AOKI ,  Yuki OKAMOTO ,  Hiroki INOUE ,  Koji KUSUNOKI ,  Yosuke TSUKAMOTO ,  Katsuki YANAGAWA ,  Kei TAKAHASHI ,  Shunpei YAMAZAKI

IPC: G06F3/041 ,  G06K9/00 ,  G09G5/22 ,  G06F1/16 ,  G06N3/04 ,  G06N3/08

Abstract: An electronic device capable of efficiently recognizing a handwritten character is provided.The electronic device includes a first circuit, a display portion, and a touch sensor. The first circuit includes a neural network. The display portion includes a flexible display. The touch sensor has the function of outputting an input handwritten character as image information to the first circuit. The first circuit has the function of analyzing the image information and converting the image information into character information, and a function of displaying an image including the character information on the display portion. The analysis is performed by inference through the use of the neural network.

公开(公告)号：US20180358925A1

公开(公告)日：2018-12-13

申请号：US16046277

申请日：2018-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki OKAMOTO ,  Yoshiyuki KUROKAWA

IPC: H03B5/06 ,  H01L29/786 ,  H01L27/092 ,  H03K3/014 ,  H03K3/03

CPC classification number: H03B5/06 ,  H01L27/092 ,  H01L29/7869 ,  H03K3/014 ,  H03K3/0315

Abstract: An oscillator capable of quick startup is provided. A transistor is provided between an output terminal of a certain stage inverter and an input terminal of the following stage inverter included in the voltage controlled oscillator. With the use of the on resistance of the transistor, the oscillation frequency of the clock signal is controlled. While supply of the power supply voltage is stopped, a signal that is input to the input terminal of the inverter just before supply of the power supply voltage is stopped is stored by turning off the transistor. This operation makes it possible to immediately output a clock signal that has the same frequency as that before supply of the power supply voltage is stopped at the time when the power supply voltage is supplied again.

公开(公告)号：US20180033696A1

公开(公告)日：2018-02-01

申请号：US15653646

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi NAKAGAWA ,  Yuki OKAMOTO

IPC: H01L21/822 ,  G09G5/00 ,  G11C8/10 ,  G09G5/399 ,  G09G3/36 ,  G06F17/50

Abstract: A novel semiconductor device, a semiconductor device with low power consumption, a semiconductor device capable of displaying a high-quality image, or a semiconductor device with a small area is provided. The semiconductor device includes an image processing portion and a driver circuit. The image processing portion includes a processor and a correction circuit. The correction circuit includes a PLD. The correction circuit is capable of correcting data input from the processor using the PLD. The processor is capable of outputting data corrected by the correction circuit to the driver circuit as a video signal. The PLD is capable of executing first gamma correction by input of first configuration data. The PLD is capable of executing second gamma correction by input of second configuration data. The content of the first gamma correction is different from that of the second gamma correction.

公开(公告)号：US20160254819A1

公开(公告)日：2016-09-01

申请号：US15151590

申请日：2016-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki OKAMOTO ,  Yoshiyuki KUROKAWA

IPC: H03L7/099 ,  H03L7/093 ,  H03K3/03 ,  H01L29/786 ,  H01L27/12

CPC classification number: H03L7/0995 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H03B5/24 ,  H03K3/0315 ,  H03L7/093 ,  H03L2207/06

Abstract: Controllability of an oscillator circuit is improved. The oscillator circuit has inverters in odd-numbered stages. A circuit is electrically connected to a power supply node of the inverters to which a high power supply potential is input. The circuit includes a first transistor, a second transistor, and a capacitor. The first transistor includes an oxide semiconductor in its channel. A holding circuit including the first transistor and the capacitor has a function of holding an analog potential that is input from the outside. The potential held by the holding circuit is input to a gate of the second transistor. A power supply potential is supplied to the inverters through the second transistor, so that the delay time of the inverter can be controlled by the potential of the gate of the second transistor.

公开(公告)号：US20160134789A1

公开(公告)日：2016-05-12

申请号：US14935721

申请日：2015-11-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Yuki OKAMOTO

IPC: H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2253 ,  H01L27/14612 ,  H01L27/14692 ,  H04N5/3696 ,  H04N5/37452 ,  H04N5/378

Abstract: To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. The imaging device can compensate variation in threshold voltage of an amplifier transistor included in the first circuit.

Abstract translation: 提供能够获得高质量成像数据的成像装置。 成像装置包括第一电路和第二电路。 第一电路包括光电转换元件，第一晶体管，第二晶体管，第三晶体管，第四晶体管，第五晶体管，第六晶体管，第七晶体管，第一电容器，第二电容器和第三电容器。 第二电路包括第八晶体管。 成像装置可以补偿包括在第一电路中的放大器晶体管的阈值电压的变化。

公开(公告)号：US20160021319A1

公开(公告)日：2016-01-21

申请号：US14799006

申请日：2015-07-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuki OKAMOTO ,  Munehiro KOZUMA ,  Yoshiyuki KUROKAWA

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/363 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14665 ,  H04N5/3575 ,  H04N5/378

Abstract: A novel semiconductor device, a semiconductor device where influence of noise is lessened, or a semiconductor device with high reliability is provided. A first circuit has a function of generating an optical data signal in accordance with the amount of irradiation light and a function of generating a reset signal corresponding to a reset state of the first circuit. A second circuit has a function of controlling output of the optical data signal and the reset signal from the first circuit to a fourth circuit. A third circuit has a function of controlling generation of the reset signal to be output from the first circuit to the fourth circuit. The fourth circuit has a function of calculating the difference between the optical data signal input from the first circuit and the reset signal input from the first circuit after input of the optical data signal.

Abstract translation: 提供了一种新颖的半导体器件，其中降低噪声影响的半导体器件或者具有高可靠性的半导体器件。 第一电路具有根据照射光的量产生光学数据信号的功能，以及产生与第一电路的复位状态对应的复位信号的功能。 第二电路具有控制光数据信号的输出和从第一电路到第四电路的复位信号的功能。 第三电路具有控制从第一电路输出到第四电路的复位信号的产生的功能。 第四电路具有计算在输入光数据信号之后从第一电路输入的光数据信号与从第一电路输入的复位信号之间的差的功能。