公开(公告)号：US20090108275A1

公开(公告)日：2009-04-30

申请号：US12352296

申请日：2009-01-12

Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC: H01L33/00

CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

公开(公告)号：US20080179603A1

公开(公告)日：2008-07-31

申请号：US12060693

申请日：2008-04-01

Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC: H01L33/00

CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US20060131558A1

公开(公告)日：2006-06-22

申请号：US10518148

申请日：2004-04-16

Applicant: Hisao Sato ,  Naoki Wada ,  Shiro Sakai ,  Masahiro Kimura

Inventor： Hisao Sato ,  Naoki Wada ,  Shiro Sakai ,  Masahiro Kimura

IPC: H01L31/0328

CPC classification number: H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2009 ,  H01S5/222 ,  H01S5/3086 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

Abstract: A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

Abstract translation: 采用GaN基半导体的发光装置。 发光装置包括n型覆层（124）; 包括n型第一阻挡层（126），阱层（128）和第二阻挡层（130）的有源层（129）; p型阻挡层（132）; 和p型覆盖层（134）。 通过设定p型阻挡层（132）的带隙能量Egb，第二阻挡层（130）的带隙能量Eg2，第一阻挡层（126）的带隙能量Eg1和 n型和p型覆盖层的带隙能量Egc满足关系式Egb> Eg2> Eg1> = Egc; 载体可以有效地限制; 并且可以增加发光的强度。

公开(公告)号：US07005685B2

公开(公告)日：2006-02-28

申请号：US10376551

申请日：2003-02-28

Applicant: Shiro Sakai ,  Yoshiki Naoi ,  Masashi Tsukihara

Inventor： Shiro Sakai ,  Yoshiki Naoi ,  Masashi Tsukihara

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/20

Abstract: A GaN-based compound semiconductor device formed by sequentially forming, on a substrate, a GaN-based buffer layer and a GaN-based compound semiconductor layer. AlxGa1-xN1-yPy or AlxGa1-xN1-yAsy (0≦x≦1, 0

Abstract translation: 通过在衬底上依次形成GaN基缓冲层和GaN基化合物半导体层而形成的GaN基化合物半导体器件。 Al x Ga 1-x N 1-y X y或Al x x （0≤x≤1,0

公开(公告)号：US20060040500A1

公开(公告)日：2006-02-23

申请号：US11205476

申请日：2005-08-17

Applicant: Shiro Sakai ,  Yves Lacroix

Inventor： Shiro Sakai ,  Yves Lacroix

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L33/20 ,  H01L33/32

Abstract: A method for manufacturing a nitride semiconductor device in which nitride crystals are sequentially grown on a substrate such as sapphire by MOCVD or the like, and p electrode and n electrode are formed. The wafer is not cut along two perpendicular directions, but rather is cut along two directions that form a 120 degree angle, to obtain a rhombus shaped semiconductor chip. Because the wafer has a six-fold rotation symmetry, by cutting the wafer at an angle of 120 degrees, the cutting directions are equivalent and the wafer can be cut in directions along which it can be easily split.

公开(公告)号：US09299779B2

公开(公告)日：2016-03-29

申请号：US14114124

申请日：2011-07-08

Applicant: Shiro Sakai

Inventor： Shiro Sakai

IPC: H01L33/20 ,  H01L29/06 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/0688 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22

Abstract: Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.

Abstract translation: 公开了一种平坦且薄的半导体衬底，其形成在异质衬底上以便容易地从异质衬底剥离，包括该非晶衬底的半导体器件及其制造方法。 半导体衬底包括具有在第一平面上以预定间隔布置的多个半球形突起的衬底和形成在衬底的第一平面上的第一半导体层。

公开(公告)号：US08735918B2

公开(公告)日：2014-05-27

申请号：US12958947

申请日：2010-12-02

Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC: H01L29/207 ,  H01L27/15 ,  H01L33/08

CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US08329488B2

公开(公告)日：2012-12-11

申请号：US13506295

申请日：2012-04-10

Applicant: Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

Inventor： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC: H01L21/00

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08183075B2

公开(公告)日：2012-05-22

申请号：US13137124

申请日：2011-07-21

Applicant: Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

Inventor： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC: H01L21/00

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract translation: 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US08129729B2

公开(公告)日：2012-03-06

申请号：US12060693

申请日：2008-04-01

Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC: H01L29/18

CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。