Abstract:
In one aspect, the present invention generally provides methods for fabricating substrates for use in a variety of analytical and/or diagnostic applications. Such a substrate can be generated by exposing a semiconductor surface (e.g., silicon surface) to a plurality of short laser pulses to generate micron-sized, and preferably submicron-sized, structures on the surface. The structured surface can then be coated with a thin metallic layer, e.g., one having a thickness in a range of about 10 nm to about 1000 nm.
Abstract:
An imaging ionizing radiation detector with a high pixel resolution is described. The detector comprises a scintillating crystal and associated sensors which determine the energy and position of the scintillation with high spatial, temporal, and energy resolution. The position sensing is done with a photon counting and position sensitive detector. The detector can achieve sub-millimeter resolution and the position determination is performed at MHZ rates.