Abstract:
An apparatus and method for independently adjusting or calibrating the characteristics of multiple drivers for output buffer circuits without significantly increasing the associated necessary circuitry is disclosed. A central control logic circuit initiates the calibration process of the drivers. A serial communication link is provided between the control logic and each of the output drivers. The serial link reduces the number of lines that are required to communicate between the central control logic and the multiple output drivers. The output drivers can be calibrated one at a time, and a handoff is made from one driver to the next to start the calibration of the subsequent driver.
Abstract:
A memory device has address, data, and control buses, and a memory-cell array including a number of memory cells arranged in rows and columns, each memory cell operable to store a bit of data. A row address decoder circuit is adapted to receive a row address applied on the address bus and operates to decode the row address and activate a row of memory cells corresponding to the decoded row address. A column address decoder circuit is adapted to receive a column address applied on the address bus and operates to decode the column address and access a plurality of memory cells in the activated row. The data stored in the plurality of memory cells in the activated row is defined as a block of data. A precharge circuit is coupled to the memory-cell array and operates, when activated, to precharge and equilibrate the memory-cell array. A block read latch circuit operates to latch a first block of data accessed in the memory-cell array corresponding to first decoded row and column addresses, and to sequentially transfer subblocks of the first block of data onto the data bus. The memory device operates such that after the first block of data is latched in the block read latch, the precharge circuit first precharges and equilibrates the memory-cell array, and the row and column decoder circuits then decode second row and column addresses such that the column address decoder circuit accesses a second block of data corresponding to the second row and column addresses before the block read latch circuit has completed sequentially transferring all the subblocks of the first block of data onto the data bus. The memory device may further include a block write latch circuit adapted to sequentially receive on the data bus subblocks of data contained in a first block of data to be written to the memory-cell array.
Abstract:
A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.
Abstract:
A vertically mountable semiconductor device assembly including a semiconductor device and a mechanism for attaching the semiconductor device to a carrier substrate. The semiconductor device has each of its bond pads disposed proximate a single edge thereof. Preferably, at least a portion of the semiconductor device is exposed. An alignment device is attached to a carrier substrate. A mounting element on the vertically mountable semiconductor device package engages the alignment device to interconnect the semiconductor device and the alignment device. Preferably, the alignment device secures the vertically mountable semiconductor device package perpendicular relative to the carrier substrate. The distance between the bond pads and corresponding terminals on the carrier substrate is very small in order to reduce impedance. The vertically mountable semiconductor device package may also be readily user-upgradable.
Abstract:
A system for supporting integrated circuit packages to prevent mechanical failure of the packages at their connection to a printed circuit board or card involves bracing the packages to the board or card. The packages may also be braced against one another. The structure is particularly well adapted to supporting vertical surface mount packages at a point spaced from the point where they connect to a printed circuit board or card.
Abstract:
The invention is a self-terminating helper flip-flop buffer circuit pertinent to a dynamic random access memory (DRAM) or static random access memory (SRAM) device. The invention turns off a device which is sourcing current to pull the data line low. The device is turned off when the potential on the low data line has transitioned to the trip point of the output data latch. The circuit of the invention senses the transition and provides the self terminating signal to the current source.
Abstract:
The invention is a method for implementing a split read/write operation in a multiple write enable dynamic random access memory device. A split read/write operation is an operation where the data in at least one bank is read while the data is being written to at least one remaining bank, all banks accessed by the same address. The method of the invention also implements writes and reads to all of the banks, a write to at least one bank, and a read to at least one bank. In instances where all of the banks are not written, the banks not being written are refreshed; and in instances where all of the banks are not being read, the banks not being read are masked for a write. The invention also provides individual masking of selected memory arrays in both write and read operations.
Abstract:
A method that dynamically adjusts link control parameters of a communications network. The communications network includes a transmitter coupled through a first data link to a receiver. The transmitter and receiver each have at least one associated link control parameter that affects the operation of that component. According to one method, data signals are transmitted over the first data link and the transmitted data signals are captured. The values of the captured data signals are compared to expected values for those signals, and the values of the link control parameters are adjusted to successfully capture the transmitted digital signals.
Abstract:
A semiconductor device includes a memory array that has dynamic memory cells. In a self refresh test mode, a self refresh test mode controller monitors and/or controls various blocks and internal signals in the semiconductor device. The self refresh test mode controller may communicate with a remote testing device through various conductors including one or more DQ lines and/or one or more address lines.
Abstract:
A computer system includes a controller coupled to a plurality of memory modules each of which includes a memory hub and a plurality of memory devices divided into a plurality of ranks. The memory hub is operable to configure the memory module to simultaneously address any number of ranks to operate in a high bandwidth mode, a high memory depth mode, or any combination of such modes.