公开(公告)号：US09660022B2

公开(公告)日：2017-05-23

申请号：US14830756

申请日：2015-08-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chih-Wei Yang ,  Yu-Cheng Tung ,  Chia-Hsun Tseng

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/764 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: A method of fabricating a single diffusion break includes providing a fin with two gate structures crossing the fin and a middle dummy gate structure crossing the fin, wherein the middle dummy gate structure is sandwiched by the gate structures. Later, numerous spacers are formed and each spacer respectively surrounds the gate structures and the middle dummy gate structure. Then, the middle dummy gate structure, and part of the fin directly under the middle dummy gate structure are removed to form a recess. Finally, an isolating layer in the recess is formed to close an entrance of the recess so as to form a void embedded within the recess.

公开(公告)号：US20170117149A1

公开(公告)日：2017-04-27

申请号：US15399715

申请日：2017-01-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

公开(公告)号：US09583343B2

公开(公告)日：2017-02-28

申请号：US14753019

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L23/528 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract translation: 形成非连续线图案的方法包括在基底上形成DSA材料层，进行DSA材料层的相分离以形成包括多个第一聚合物结构和交替布置的第二聚合物结构的有序周期性图案， 形成第一掩模以覆盖有序周期性图案的第一部分，执行第一蚀刻工艺以去除由第一掩模暴露的第一聚合物结构的一部分，去除第一掩模，形成第二掩模以覆盖第二掩模的第二部分 所述有序周期性图案间隔到所述有序周期性图案的第一部分，执行第二蚀刻工艺以去除由所述第二掩模暴露的所述第二聚合物结构的一部分，以及去除所述第二掩模。 剩余的第一聚合物结构和剩余的第二聚合物结构彼此不连接。

公开(公告)号：US20160343567A1

公开(公告)日：2016-11-24

申请号：US14753019

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Te Chen ,  En-Chiuan Liou ,  Chia-Hsun Tseng ,  Shin-Feng Su ,  Yu-Ting Hung ,  Meng-Lin Tsai

IPC: H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract translation: 形成非连续线图案的方法包括在基底上形成DSA材料层，进行DSA材料层的相分离以形成包括多个第一聚合物结构和交替布置的第二聚合物结构的有序周期性图案， 形成第一掩模以覆盖有序周期性图案的第一部分，执行第一蚀刻工艺以去除由第一掩模暴露的第一聚合物结构的一部分，去除第一掩模，形成第二掩模以覆盖第二掩模的第二部分 所述有序周期性图案间隔到所述有序周期性图案的第一部分，执行第二蚀刻工艺以去除由所述第二掩模暴露的所述第二聚合物结构的一部分，以及去除所述第二掩模。 剩余的第一聚合物结构和剩余的第二聚合物结构彼此不连接。

公开(公告)号：US09470987B1

公开(公告)日：2016-10-18

申请号：US14920859

申请日：2015-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Che-Yi Lin ,  En-Chiuan Liou ,  Yi-Jing Wang ,  Chia-Hsun Tseng

IPC: G03F7/00 ,  H01L21/30 ,  H01L21/02 ,  H01L21/32 ,  H01L21/26 ,  H01L21/31 ,  G03F7/20 ,  H01L21/266 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

CPC classification number: G03F7/70633 ,  H01L21/02642 ,  H01L21/027 ,  H01L21/266 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

Abstract: An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.

Abstract translation: 覆盖掩模包括多个第一图案，多个第二图案和多个第三图案。 第一图案布置在第一间距之内。 第二图案布置在第二间距内。 第三图案的第一部分在第一间距内与第一图案交替布置，并且第三图案的第二部分在第二间距内与第二图案交替布置，并且第一间距不等于 第二音调

公开(公告)号：US20160204197A1

公开(公告)日：2016-07-14

申请号：US14612300

申请日：2015-02-03

Applicant: United Microelectronics Corp.

Inventor： En-Chiuan Liou ,  Ssu-I Fu ,  Chia-Lin Lu ,  Shih-Hung Tsai ,  Chih-Wei Yang ,  Chia-Ching Lin ,  Chia-Hsun Tseng ,  Rai-Min Huang

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0684 ,  H01L21/76 ,  H01L21/762 ,  H01L21/76232 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/6681 ,  H01L29/7846 ,  H01L29/7851

Abstract: The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of first fin structures disposed in the substrate, where each first fin structure and the substrate have same material, and a plurality of second fin structures disposed in the STI, where each second fin structure and the STI have same material.

Abstract translation: 本发明提供一种半导体结构，包括基板，设置在基板中的浅沟槽隔离（STI），设置在基板中的多个第一翅片结构，其中每个第一翅片结构和基板具有相同的材料，以及多个 设置在STI中的第二鳍结构，其中每个第二鳍结构和STI具有相同的材料。