公开(公告)号：US20200111884A1

公开(公告)日：2020-04-09

申请号：US16177368

申请日：2018-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Wen-Yen Huang ,  Shih-Min Chou ,  Zhen Wu ,  Nien-Ting Ho ,  Chih-Chiang Wu ,  Ti-Bin Chen

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

公开(公告)号：US09899491B2

公开(公告)日：2018-02-20

申请号：US15182620

申请日：2016-06-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC: H01L29/51 ,  H01L21/82 ,  H01L27/088 ,  H01L29/66 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/423

CPC classification number: H01L29/512 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78

Abstract: A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

公开(公告)号：US20170330952A1

公开(公告)日：2017-11-16

申请号：US15182620

申请日：2016-06-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC: H01L29/51 ,  H01L29/423 ,  H01L29/40 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/512 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78

Abstract: A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

公开(公告)号：US20160336194A1

公开(公告)日：2016-11-17

申请号：US14711752

申请日：2015-05-13

Applicant: United Microelectronics Corp.

Inventor： Chiu-Hsien Yeh ,  Zhen Wu ,  Yen-Cheng Chang ,  Yu-Ting Tseng

IPC: H01L21/321 ,  H01L21/308 ,  H01L21/8238 ,  H01L21/283

CPC classification number: H01L21/823821 ,  H01L21/02041 ,  H01L21/28088 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.

Abstract translation: 形成半导体器件的方法包括以下步骤。 首先，在基板上形成第一功函数层。 接下来，在第一功函数层上形成第一图案化光致抗蚀剂层。 然后，通过使用第一图案化的光致抗蚀剂层作为掩模来部分去除第一功函数层以形成图案化的第一功函数层。 随后，通过提供自由基氧来除去第一图案化的光致抗蚀剂层。

公开(公告)号：US20250015158A1

公开(公告)日：2025-01-09

申请号：US18888191

申请日：2024-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Wen-Yen Huang ,  Shih-Min Chou ,  Zhen Wu ,  Nien-Ting Ho ,  Chih-Chiang Wu ,  Ti-Bin Chen

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/40

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

公开(公告)号：US20200321442A1

公开(公告)日：2020-10-08

申请号：US16907287

申请日：2020-06-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Wen-Yen Huang ,  Shih-Min Chou ,  Zhen Wu ,  Nien-Ting Ho ,  Chih-Chiang Wu ,  Ti-Bin Chen

IPC: H01L29/49 ,  H01L29/40 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.

公开(公告)号：US20190280106A1

公开(公告)日：2019-09-12

申请号：US16404749

申请日：2019-05-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Yi-Liang Ye ,  Sung-Yuan Tsai ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Zhen Wu ,  Tai-Yen Lin

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/285 ,  H01L29/08 ,  H01L29/78 ,  H01L21/265

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

公开(公告)号：US10332981B1

公开(公告)日：2019-06-25

申请号：US15943657

申请日：2018-04-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Yi-Liang Ye ,  Sung-Yuan Tsai ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Zhen Wu ,  Tai-Yen Lin

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L21/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.