公开(公告)号：US20110109952A1

公开(公告)日：2011-05-12

申请号：US12615358

申请日：2009-11-10

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: G02B26/08 ,  H02N10/00 ,  H01S4/00

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US07835093B2

公开(公告)日：2010-11-16

申请号：US12702132

申请日：2010-02-08

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: H01L21/302 ,  B44C1/22

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20100265563A1

公开(公告)日：2010-10-21

申请号：US12825214

申请日：2010-06-28

Applicant: Fan Zhong ,  Lior Kogut

Inventor： Fan Zhong ,  Lior Kogut

IPC: G02B26/00 ,  B05D5/06 ,  B05D5/12

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US20100200938A1

公开(公告)日：2010-08-12

申请号：US12702132

申请日：2010-02-08

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: H01L29/84 ,  H01L21/02 ,  H01L31/18

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20100046058A1

公开(公告)日：2010-02-25

申请号：US12614311

申请日：2009-11-06

Applicant: Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

Inventor： Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

IPC: G02B26/00 ,  H01L21/30

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

公开(公告)号：US20090273823A1

公开(公告)日：2009-11-05

申请号：US12436064

申请日：2009-05-05

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: G02B26/00 ,  B05D5/12

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US07595209B1

公开(公告)日：2009-09-29

申请号：US11716233

申请日：2007-03-09

Applicant: Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L21/56 ,  H01L21/50

CPC classification number: B81C1/0023 ,  B81B7/0054 ,  B81C2201/0167 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/568 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Multi-layered, planar microshells having low stress for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The sealing layer may further include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. The various layers may be formed employing processes having opposing stresses to tune the residual stress of the multi-layered microshell. In an embodiment, the hermetic layer is a metal which is deposited with a process tuned to impart a tensile stress to lower the residual stress in the microshell below the magnitude of cumulative stress present in sealing layer and pre-sealing layer.

Abstract translation: 具有低应力的多层平面微壳体，用于诸如MEMS和微电子器件的封装。 微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 密封层还可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方形成密封层以密封穿孔。 可以使用具有相反应力的工艺来形成各个层，以调节多层微壳的残余应力。 在一个实施例中，密封层是金属，其沉积有被调整以赋予拉伸应力的工艺，以将微壳中的残余应力降低到低于存在于密封层和预密封层中的累积应力的大小。

公开(公告)号：US07527998B2

公开(公告)日：2009-05-05

申请号：US11478702

申请日：2006-06-30

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: H01L21/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US07486867B2

公开(公告)日：2009-02-03

申请号：US11506622

申请日：2006-08-18

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G02B6/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20080218840A1

公开(公告)日：2008-09-11

申请号：US11506770

申请日：2006-08-18

Applicant: Chengin Qui ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

Inventor： Chengin Qui ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

IPC: G02F1/01 ,  B29D11/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。