公开(公告)号：US20180237914A1

公开(公告)日：2018-08-23

申请号：US15897209

申请日：2018-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Kentaro OSHIMO ,  Hideomi HANE

IPC: C23C16/455 ,  C23C16/513 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/511 ,  C23C16/513 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32724 ,  H01J37/32752 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.

公开(公告)号：US20180226237A1

公开(公告)日：2018-08-09

申请号：US15945135

申请日：2018-04-04

Applicant: Xinsheng Guo

Inventor： Xinsheng Guo

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C16/458 ,  C23C14/56 ,  C23C16/54

CPC classification number: H01J37/3488 ,  C23C14/50 ,  C23C14/505 ,  C23C14/568 ,  C23C16/458 ,  C23C16/54 ,  H01J37/32899 ,  H01J37/34 ,  H01J37/3417

Abstract: A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.

公开(公告)号：US20180130662A1

公开(公告)日：2018-05-10

申请号：US15865758

申请日：2018-01-09

Applicant: Texas Instruments Incorporated

Inventor： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC: H01L21/28 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L29/51 ,  H01L21/02

CPC classification number: H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US09922854B2

公开(公告)日：2018-03-20

申请号：US13098253

申请日：2011-04-29

Applicant: Shinichi Kurita ,  Jozef Kudela ,  Suhail Anwar ,  John M. White ,  Dong-Kil Yim ,  Hans Georg Wolf ,  Dennis Zvalo ,  Makoto Inagawa ,  Ikuo Mori

Inventor： Shinichi Kurita ,  Jozef Kudela ,  Suhail Anwar ,  John M. White ,  Dong-Kil Yim ,  Hans Georg Wolf ,  Dennis Zvalo ,  Makoto Inagawa ,  Ikuo Mori

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67712 ,  C23C16/4587 ,  C23C16/46 ,  C23C16/463 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/67098 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67201

Abstract: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

公开(公告)号：US20180076065A1

公开(公告)日：2018-03-15

申请号：US15418506

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/67 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/285 ,  H01J37/32 ,  C30B25/04 ,  C30B25/18 ,  C30B29/06 ,  B08B7/00

CPC classification number: H01L21/67207 ,  B08B7/0035 ,  C30B25/04 ,  C30B25/186 ,  C30B29/06 ,  H01J37/32458 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L29/66636 ,  H01L29/66795

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

公开(公告)号：US20180047545A1

公开(公告)日：2018-02-15

申请号：US15789059

申请日：2017-10-20

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32899 ,  H01J2237/20214 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/0228 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/68764

Abstract: A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate. The etching step includes supplying the etching gas to the surface of the rotary table and supplying a purge gas from a plurality of purge gas supply units that are provided near a region where the etching gas is supplied, and controlling an etching amount of etching the film by independently varying a flow rate of the purge gas that is supplied from each of the plurality of purge gas supply units.

公开(公告)号：US20180040461A1

公开(公告)日：2018-02-08

申请号：US15226463

申请日：2016-08-02

Applicant: Advanced Energy Industries, Inc.

Inventor： Joshua Brian Pankratz ,  Douglas R. Pelleymounter ,  Uwe Krause

IPC: H01J37/34 ,  C03C17/09 ,  H01J37/32 ,  C23C14/34 ,  C23C14/18

CPC classification number: H01J37/347 ,  C03C17/09 ,  C03C2218/154 ,  C23C14/185 ,  C23C14/34 ,  C23C14/568 ,  H01J37/32733 ,  H01J37/32899

Abstract: Systems, methods, and apparatus are disclosed for reducing crazing in thin film stacks deposited on large area substrates such as glass, for instance architectural glass. Crazing can occur once a conductor-insulator-conductor series of films have been deposited, thereby effectively forming a capacitor, and where the substrate spans multiple deposition chambers such the coupling between chambers can cause the effective capacitor voltage to breakdown the insulator layer between the two conductor layers. The resulting crazing can be reduced if not eliminated through the grounding of outputs of an AC power supply that assists in deposition of one of the conductor layers. The grounding is via rectified channels, such as diodes, or series of diodes such that the outputs of the AC power supply are precluded from falling below ground potential.

公开(公告)号：US20170372951A1

公开(公告)日：2017-12-28

申请号：US15627478

申请日：2017-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TOSHIMA ,  Tatsuo HATANO ,  Shinji FURUKAWA ,  Naoki WATANABE ,  Naoyuki SUZUKI

IPC: H01L21/768 ,  H01J37/34 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/76862 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32899 ,  H01J37/3435 ,  H01L21/68764 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879

Abstract: There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.

公开(公告)号：US20170298514A1

公开(公告)日：2017-10-19

申请号：US15131409

申请日：2016-04-18

Applicant: Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

Inventor： Takahiro Hirano ,  Toshihiko Iwao ,  Takaaki Kato

IPC: C23C16/511 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/511 ,  C23C16/4404 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32899

Abstract: Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.

公开(公告)号：US20170278684A1

公开(公告)日：2017-09-28

申请号：US15619967

申请日：2017-06-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.