公开(公告)号：US12112928B1

公开(公告)日：2024-10-08

申请号：US18435545

申请日：2024-02-07

Applicant: GUANGZHOU AIFO LIGHT COMMUNICATION TECHNOLOGY COMPANY LTD.

Inventor： Guoqiang Li ,  Xinyan Yi

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/458 ,  C23C16/50 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01J37/32715 ,  C23C16/0227 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67196 ,  H01L21/67706 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: A PECVD apparatus includes a transfer chamber, a load lock, a cleaning chamber, a spin-drying chamber, a deposition chamber, and an unload lock; wherein the load lock, the cleaning chamber, the spin-drying chamber, the deposition chamber, and the unload lock are successively spirally arranged on a side wall of the transfer chamber; and a spiral conveyor device is arranged in the transfer chamber, wherein the spiral conveyor device includes a conveyor rod, a spiral drive mechanism, and a plurality of conveyor assemblies; wherein the conveyor rod is vertically arranged in the transfer chamber, and the plurality of conveyor assemblies are spirally arranged on the conveyor rod, and wherein the spiral drive mechanism is configured to drive the conveyor rod to undergo a spiral ascending or descending movement.

公开(公告)号：US12112927B2

公开(公告)日：2024-10-08

申请号：US17734572

申请日：2022-05-02

Applicant: Picosun Oy

Inventor： Väinö Kilpi

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01J37/32715 ,  C23C16/4409 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4586 ,  H01J37/32834 ,  H01J37/3288 ,  H01J37/32899 ,  H01J37/3222 ,  H01J2237/20235 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/3341

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

公开(公告)号：US20240213033A1

公开(公告)日：2024-06-27

申请号：US18544516

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YongGyu Han ,  Marko Tuominen ,  Shaoren Deng ,  Vincent Vandalon ,  Kranthi Kumar Vaidyula ,  Nadadur Veeraraghavan Srinath

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32899 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

Abstract: The current disclosure relates to methods and assemblies for selectively etching a material from a first surface of a substrate relative to a second surface of the same substrate. The second surface of the substrate is covered by an organic polymer layer and the first surface is etched by a reactive species generated from NF3-containing plasma. The current disclosure further relates to semiconductor structures and devices formed by using the methods or assemblies of the disclosure.

公开(公告)号：US20240194441A1

公开(公告)日：2024-06-13

申请号：US18553561

申请日：2022-03-16

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Jing WEI ,  Yu ZHANG ,  Gang WEI ,  Jing YANG ,  Guibin WANG ,  Xin YUE

IPC: H01J37/244 ,  H01J37/32

CPC classification number: H01J37/244 ,  H01J37/32568 ,  H01J37/32899 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/334

Abstract: The present disclosure provides a power adjustment method of an upper electrode power supply of a semiconductor process apparatus. The method includes obtaining a processing load of an upper electrode power supply of a reference process chamber and a processing load of an upper electrode power supply of a current process chamber corresponding to semiconductor process step, when starting to perform a semiconductor process step, determining a power compensation coefficient for the current process chamber relative to the reference process chamber based on the processing load of the current process chamber and the processing load the reference process chamber, and controlling the upper electrode power supply to output compensation power. The compensation power is a product of the set power of the upper electrode power supply of the current process chamber corresponding to the semiconductor process step and the corresponding power compensation coefficient. With the power adjustment method of the present disclosure, the consistency of the plasma parameters in different process chambers is improved, thereby improving the process result consistency. The present disclosure also provides the semiconductor process apparatus.

公开(公告)号：US12002652B2

公开(公告)日：2024-06-04

申请号：US17536733

申请日：2021-11-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Stephen E. Savas ,  Shawming Ma

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32119 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.

公开(公告)号：US20240112918A1

公开(公告)日：2024-04-04

申请号：US18479986

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Noboru SAITO ,  Yuta NAKANE ,  Atsushi TAKAHASHI ,  Shinya ISHIKAWA ,  Satoshi OHUCHIDA ,  Maju TOMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32899 ,  H01L21/308 ,  H01L21/31144

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.

公开(公告)号：US11901175B2

公开(公告)日：2024-02-13

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/24 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02315 ,  H01L21/68714 ,  H01L21/76897 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02208 ,  H01L21/67184

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20240047267A1

公开(公告)日：2024-02-08

申请号：US18228300

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Shiyu YUE ,  Rongjun WANG

IPC: H01L21/768 ,  H01J37/32 ,  C23C14/56 ,  C23C14/58 ,  C23C16/06 ,  C23C14/06 ,  C23C16/455 ,  C23C14/18

CPC classification number: H01L21/76826 ,  H01L21/76843 ,  H01L21/76877 ,  H01J37/32091 ,  H01J37/32899 ,  C23C14/568 ,  C23C14/5846 ,  C23C16/06 ,  C23C14/0641 ,  C23C16/45525 ,  C23C14/18 ,  H01J2237/332

Abstract: Embodiments of methods and associated apparatus for filling features in a silicon-containing dielectric layer of a substrate are provided herein. In some embodiments, a method of filling features in a silicon-containing dielectric layer of a substrate includes: depositing a discontinuous liner layer in the feature via a physical vapor deposition (PVD) process in a first process chamber; performing a hydrogen plasma process in a second process chamber to form silicon-hydrogen bonds on surfaces of the feature not covered by the discontinuous liner layer; and depositing a bulk tungsten layer on the discontinuous liner layer and over the silicon-hydrogen bonds to fill the feature with tungsten in a third process chamber.

公开(公告)号：US11842889B2

公开(公告)日：2023-12-12

申请号：US16469266

申请日：2017-11-16

Applicant: SCHNEIDER GMBH & CO. KG

Inventor： Gunter Schneider ,  Markus Fuhr

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  C23C14/50 ,  C23C14/56 ,  G02B1/10 ,  G02B1/14 ,  G02B1/18 ,  G02B1/11

CPC classification number: H01J37/3417 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/3405 ,  H01J37/3423 ,  C23C14/505 ,  C23C14/568 ,  G02B1/10 ,  G02B1/11 ,  G02B1/14 ,  G02B1/18 ,  H01J37/32899 ,  H01J37/347 ,  H01J2237/20214

Abstract: A device, a method, and a use for coating lenses are proposed, wherein the lenses to be coated are arranged in pairs over parallel, tubular targets. The distance of the targets to each other and/or to the lenses is varied for individual adaption. Further, the lenses are coated from both sides.

公开(公告)号：US20230369072A1

公开(公告)日：2023-11-16

申请号：US17743922

申请日：2022-05-13

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Collen Leng ,  Syed A. Alam ,  Tianyang Li

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67017 ,  H01J37/3244 ,  H01J37/32899 ,  H01J2237/332 ,  H01J2237/24585

Abstract: Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source. The assemblies may include a heater that is fluidly coupled with an outlet of the liquid delivery source. The assemblies may include a liquid flow controller that is fluidly coupled with the liquid delivery source downstream of the heater. The assemblies may include a liquid vaporizer fluidly coupled with a downstream end of the liquid flow controller. The assemblies may include a chamber delivery line coupled with an output of the liquid vaporizer.