Abstract:
A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C.
Abstract:
A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.
Abstract:
The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state whilst an external radiation source is irradiating the object.
Abstract:
The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
Abstract:
An advanced image intensifier assembly provides enhanced functionality. A grounded photocathode provides shielding from electromagnetic interference, improving the ability to work in multiple light conditions. Bi-directional wireless communication and non-volatile storage allow critical information to be permanently stored and read wirelessly at a scanning station, easing in identification of units. Because bi-directional communication components can be embedded within an image intensifier assembly, existing end-user night vision devices can be upgraded by simply replacing the image intensifier assembly. For enhanced safety, a programmable shutdown capability is provided. This renders the device inoperative in the absence of continuous input, either wireless or manual, from an authorized operator, thus rendering the device useless if captured by enemy combatants. Finally, direct 1-volt operation enables the device to be powered by, for example, a single AA battery.
Abstract:
Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.
Abstract translation:从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内,并且在光吸收中产生光电子 光电子在光吸收层4内扩散,并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ,光电子的能量大于表面层5中的电子亲和力,因此光电子容易被排出到外部。 这里,光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成,因此 得到具有高量子效率的太阳能型半导体光电阴极1。
Abstract:
A method and apparatus for increasing the quantum efficiency of a photomultiplier tube by providing a photocathode with an increased surface-to-volume ratio. The photocathode includes a transparent substrate, upon one major side of which is formed one or more large aspect-ratio structures, such as needles, cones, fibers, prisms, or pyramids. The large aspect-ratio structures are at least partially composed of a photoelectron emitting material, i.e., a material that emits a photoelectron upon absorption of an optical photon. The large aspect-ratio structures may be substantially composed of the photoelectron emitting material (i.e., formed as such upon the surface of a relatively flat substrate) or be only partially composed of a photoelectron emitting material (i.e., the photoelectron emitting material is coated over large aspect-ratio structures formed from the substrate material itself.) The large aspect-ratio nature of the photocathode surface allows for an effective increase in the thickness of the photocathode relative the absorption of optical photons, thereby increasing the absorption rate of incident photons, without substantially increasing the effective thickness of the photocathode relative the escape incidence of the photoelectrons.
Abstract:
A method for detecting radiation comprising nine steps is disclosed. Step one, forming a detector having a photocathode (22) with a protective layer (22c) of cesium, oxygen and fluorine; a microchannel plate (MCP) (24); and an electron receiver (26). Step two, receiving radiation at the photocathode (22). Step three, photocathode (22) discharging electrons (34) in response to the received photons. Step four, accelerating discharged electrons (34) from the photocathode (22) to the input face (24a) of the microchannel plate (24). Step five, receiving the electrons (34) at the input face (24a) of the microchannel plate (24). Step six, generating a cascade of secondary emission electrons (36) in the microchannel plate (24) in response to the received electrons (34). Step seven, emitting the secondary emission electrons (36) from the output face (24b) of the microchannel plate (24). Step eight, receiving secondary emission electrons (36) at the electron receiver (26). Step nine, producing an output characteristic of the secondary emission electrons (36). A device for detecting radiation is disclosed. The device comprises a photocathode (22), a microchannel plate (24) and an electron receiver (26). The photocathode (22) is operable to receive radiation on an input side (22a) and to discharge electrons (34) from its output side (22b) in response. The output side (22b) of the photocathode (22) has a protective layer (22c) comprising cesium, oxygen and fluorine. The microchannel plate (24) serves to receive electrons (34) on its input face (24a) from the photocathode (22), to produce a cascade of secondary emission electrons (36) and to discharge those electrons (36) from its output face (24b). The electron receiver (26) is operable to receive secondary emissions electrons (36) from the microchannel plate (24) and to produce an output characteristic of those electrons (36).
Abstract:
A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.
Abstract:
A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.