公开(公告)号：US20120164774A1

公开(公告)日：2012-06-28

申请号：US13406069

申请日：2012-02-27

Applicant: Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

Inventor： Florian Schoen ,  Wolfgang Raberg ,  Bernhard Winkler ,  Werner Weber

IPC: H01L21/02

CPC classification number: B81C1/00182 ,  B81B2201/0271 ,  H01L41/0933 ,  Y10S977/732

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括第一半导体材料和设置在第一半导体材料中的至少一个沟槽，所述至少一个沟槽具有侧壁。 绝缘材料层设置在第一半导体材料中的至少一个沟槽的侧壁的上部上方，以及靠近侧壁的第一半导体材料的顶表面的一部分之上。 第二半导体材料或导电材料设置在至少一个沟槽内，并且至少在绝缘材料层的上方设置在靠近侧壁的第一半导体材料的顶表面的部分之上。

公开(公告)号：US20120146736A1

公开(公告)日：2012-06-14

申请号：US13307336

申请日：2011-11-30

Applicant: Ryuji KIHARA

Inventor： Ryuji KIHARA

IPC: H03B5/30 ,  H01L21/28 ,  H02N11/00

CPC classification number: H03H9/2457 ,  B81B2201/0271 ,  B81B2203/019 ,  B81C1/0015 ,  H03H3/0076 ,  H03H2009/02291 ,  H03H2009/02511

Abstract: A MEMS resonator according to the invention includes: a substrate; a first electrode formed above the substrate; and a second electrode having a supporting portion which is formed above the substrate and a beam portion which is supported by the supporting portion and arranged above the first electrode, wherein the beam portion has, in plan view, a shape in which the width monotonically decreases in a direction from the supporting portion toward a tip of the beam portion in a region overlapping the first electrode.

Abstract translation: 根据本发明的MEMS谐振器包括：基板; 形成在所述衬底上的第一电极; 以及第二电极，其具有形成在所述基板上方的支撑部分和梁部分，所述梁部分由所述支撑部分支撑并且布置在所述第一电极之上，其中所述梁部分在平面图中具有所述宽度单调减小的形状 在与第一电极重叠的区域中从支撑部朝向梁部的尖端的方向。

公开(公告)号：US20120134121A1

公开(公告)日：2012-05-31

申请号：US13306493

申请日：2011-11-29

Applicant: Yoko KANEMOTO ,  Ryuji KIHARA

Inventor： Yoko KANEMOTO ,  Ryuji KIHARA

IPC: H05K1/18 ,  H05K3/10 ,  H05K1/16

CPC classification number: B81C1/00801 ,  B81B2201/0271 ,  B81B2207/07 ,  B81C2201/053 ,  Y10T29/49165

Abstract: An electronic device includes: a vibrator disposed within a cavity on a substrate and electrically driven; an enclosure wall which has electric conductivity and sections the cavity from an insulation layer surrounding the circumference of the cavity; a first wiring and a second wiring which connect with the vibrator and penetrate the enclosure wall; and a liquid flow preventing portion disposed at the position where the first wiring and the second wiring penetrate the enclosure wall to prevent flow of etchant dissolving the insulation layer from the cavity toward the insulation layer and insulate the first wiring and the second wiring from the enclosure wall.

Abstract translation: 电子设备包括：振动器，设置在基板上的空腔内并电驱动; 封闭壁，其具有导电性，并且将空腔从围绕空腔圆周的绝缘层分开; 与振动器连接并穿透封闭壁的第一布线和第二布线; 以及设置在所述第一布线和所述第二布线穿过所述封闭壁的位置处的液体流动防止部，以防止将所述绝缘层从所述空腔朝向所述绝缘层溶解的蚀刻剂流动，并且将所述第一布线和所述第二布线与所述封装 壁。

公开(公告)号：US20120122314A1

公开(公告)日：2012-05-17

申请号：US13321116

申请日：2010-05-26

Applicant: Hauke Pohlmann ,  Ronald Dekker ,  Joerg Mueller ,  Martin Duemling

Inventor： Hauke Pohlmann ,  Ronald Dekker ,  Joerg Mueller ,  Martin Duemling

IPC: H01L21/304

CPC classification number: H03H3/0073 ,  B81B2201/0271 ,  B81C1/0019 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49156

Abstract: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

Abstract translation: 一种制造包括微机电元件的电子器件的方法，所述方法包括以下步骤：在衬底（32）的第一侧上提供材料层（34）; 在后面的材料（34）中提供沟槽（40）; 从沟槽（40）蚀刻材料，以便也从衬底（32）的第一侧蚀刻衬底（32）; 从衬底的第二侧研磨衬底（32）以露出沟槽（40）; 并使用暴露的沟槽（40）作为蚀刻孔。 暴露的沟槽（40）用作用于从衬底（32）释放材料层（34）的一部分（例如光束谐振器（12））的蚀刻孔。 设置有输入电极（6），输出电极（8）和顶部电极（10）。

公开(公告)号：US08174352B2

公开(公告)日：2012-05-08

申请号：US13000644

申请日：2009-06-26

Applicant: Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

Inventor： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

IPC: G01L1/22

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

Abstract: A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.

Abstract translation: 制造或制备薄膜叠层的方法，其显示中等的，有限的，受应力依赖的电阻，并且可以结合到转导机构中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。 当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。 通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。 因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。 还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。

公开(公告)号：US20120086306A1

公开(公告)日：2012-04-12

申请号：US13330965

申请日：2011-12-20

Applicant: ALEXEI GAIDARZHY ,  Pritiraj Mohanty

Inventor： ALEXEI GAIDARZHY ,  Pritiraj Mohanty

IPC: H02N1/00

CPC classification number: H03H9/02259 ,  B81B3/0086 ,  B81B2201/0271 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02417 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2463 ,  H03H2009/02354 ,  H03H2009/02464 ,  H03H2009/02496

Abstract: Micromechanical resonating devices, as well as related methods, are described herein. The resonating devices can include a micromechanical resonating structure, an actuation structure that actuates the resonating structure, and a detection structure that detects motion of the resonating structure.

Abstract translation: 本文描述了微机械谐振装置以及相关方法。 谐振装置可以包括微机械谐振结构，致动谐振结构的致动结构以及检测谐振结构的运动的检测结构。

公开(公告)号：US20120061734A1

公开(公告)日：2012-03-15

申请号：US13300138

申请日：2011-11-18

Applicant: Karl-Heinz Mueller ,  Bernhard Winkler ,  Robert Gruenberger

Inventor： Karl-Heinz Mueller ,  Bernhard Winkler ,  Robert Gruenberger

IPC: H01L29/84 ,  H01L27/06 ,  H01L21/82

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0742

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的半导体层。 沟槽设置在半导体层中，沟槽具有第一侧壁和相对的第二侧壁。 第一绝缘材料层设置在第一侧壁的上部之上，并且设置在沟槽内的导电材料。 在导电材料和半导体层之间设置气隙。

公开(公告)号：US08125046B2

公开(公告)日：2012-02-28

申请号：US12133104

申请日：2008-06-04

Applicant: Karl-Heinz Mueller ,  Bernhard Winkler ,  Robert Gruenberger

Inventor： Karl-Heinz Mueller ,  Bernhard Winkler ,  Robert Gruenberger

IPC: H01L21/70

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0742

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的半导体层。 沟槽设置在半导体层中，沟槽具有第一侧壁和相对的第二侧壁。 第一绝缘材料层设置在第一侧壁的上部之上，并且设置在沟槽内的导电材料。 在导电材料和半导体层之间设置气隙。

公开(公告)号：US08115266B2

公开(公告)日：2012-02-14

申请号：US13170628

申请日：2011-06-28

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08076169B2

公开(公告)日：2011-12-13

申请号：US12488882

申请日：2009-06-22

Applicant: Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/00

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。