公开(公告)号：US20060079033A1

公开(公告)日：2006-04-13

申请号：US11236001

申请日：2005-09-27

Applicant: Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

Inventor： Akio Machida ,  Hirotaka Akao ,  Takahiro Kamei ,  Isamu Nakao

IPC: H01L21/84

CPC classification number: H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1214

Abstract: A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.

Abstract translation: 制造薄膜半导体器件的方法包括用激光束照射非晶半导体薄膜以使非晶半导体薄膜结晶的退火步骤。 在退火步骤中，半导体薄膜连续照射激光束，同时以预定速度移动用激光束照射的半导体薄膜的位置，从而可以从没有激光束照射的区域去除过量的氢，而没有 在半导体薄膜中蒸发和膨胀氢离子。

公开(公告)号：US20050172888A1

公开(公告)日：2005-08-11

申请号：US11098846

申请日：2005-04-05

Applicant: Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: G02F1/1368 ,  C23C14/14 ,  C23C14/34 ,  C23C14/58 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/56 ,  C30B13/00 ,  C30B13/24 ,  G09G3/36 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US06927436B1

公开(公告)日：2005-08-09

申请号：US10429616

申请日：2003-05-05

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: C30B23/02 ,  H01L21/02 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76

CPC classification number: C30B23/02 ,  C30B29/16 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

Abstract: An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Abstract translation: 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并将立方晶系或四方晶系稀土氧化物如CeO 2 例如通过分子束外延在Si衬底上以（001）取向外延生长。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US06749686B2

公开(公告)日：2004-06-15

申请号：US10127155

申请日：2002-04-19

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: C30B2502

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/3147 ,  H01L21/31604 ,  H01L21/31654

Abstract: An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

Abstract translation: 外延稀土氧化物（110）/硅（001）结构通过在（001）取向的硅衬底上以比常规的生长温度外延生长（110）取向中的二氧化铈等稀土氧化物 。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 通过使用由至少一种稀土元素构成的源材料，在含有氧化性气体的气氛中在Si衬底上的（110）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。

公开(公告)号：US06716664B2

公开(公告)日：2004-04-06

申请号：US10391811

申请日：2003-03-20

Applicant: Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

Inventor： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC: H01L5140

CPC classification number: H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.

Abstract translation: 公开了一种没有破裂和功能特性优异的功能元件及其制造方法。 在由诸如聚对苯二甲酸乙二醇酯的有机材料制成的基板（11）上依次形成低温软化层（12）和耐热层（13），并且由多晶硅制成的功能层（14） 形成在其上。 通过用激光束照射使作为前体层的非晶硅层结晶来形成功能层（14）。 当施加激光束时，热量传递到基板（11），并且基板（11）趋于膨胀。 然而，由基板（11）和功能层（14）之间的热膨胀系数的差异引起的应力被低温软化层（12）吸收，从而在功能层中不会发生裂纹和剥离 （14）。 低温软化层（12）优选由含有丙烯酸树脂的聚合材料制成。 通过在基板（11）和功能层（14）之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

公开(公告)号：US06610548B1

公开(公告)日：2003-08-26

申请号：US09532793

申请日：2000-03-22

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: H01L2100

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

Abstract: An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Abstract translation: 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 例如通过分子束外延在Si衬底上的（001）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US08278163B2

公开(公告)日：2012-10-02

申请号：US12507985

申请日：2009-07-23

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

IPC: H01L21/268 ,  G21K5/10

CPC classification number: H01L21/02691 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/268

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract translation: 一种半导体处理装置，包括：要安装具有要加工的半导体膜的衬底的阶段; 供给部，其以使得能量束的照射点以给定间隔对准的方式将多个能量束提供到安装在台上的半导体膜上; 以及控制部，其使所述多个能量束和所述基板相对于与所述供给部供给的所述多个能量束的照射点的排列不平行的方向移动，并且利用所述照射来扫描所述半导体膜 多个能量束的点平行，从而控制半导体膜上的热处理。

公开(公告)号：US07982372B2

公开(公告)日：2011-07-19

申请号：US12326353

申请日：2008-12-02

Applicant: Akio Machida ,  Ryo Nakagawa ,  Yasuhide Matsuo

Inventor： Akio Machida ,  Ryo Nakagawa ,  Yasuhide Matsuo

IPC: H01L41/04 ,  H01L41/08

CPC classification number: H01L41/107 ,  H01L41/053

Abstract: A piezoelectric transformer includes: a piezoelectric transducer on whose outer surface an electrode is formed; a case housing the piezoelectric transducer; a terminal disposed to face the electrode; an elastic member in contact with both the electrode and the terminal in the case and having conductivity to bring the electrode and the terminal into mutual continuity; and a folder formed in the case and fixedly holding the elastic member to press-fit the elastic member between the electrode and the terminal.

Abstract translation: 压电变压器包括：压电换能器，其外表面上形成有电极; 容纳压电换能器的壳体; 设置成面对电极的端子; 在壳体中与电极和端子接触的弹性构件，并且具有使电极和端子相互连续的导电性; 以及形成在壳体中的夹子，并且固定地保持弹性构件以将弹性构件压配合在电极和端子之间。

公开(公告)号：US20110033999A1

公开(公告)日：2011-02-10

申请号：US12847200

申请日：2010-07-30

Applicant: Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

Inventor： Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

IPC: H01L21/336 ,  H01L21/22

CPC classification number: H01L29/78621 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/2255 ,  H01L29/66757

Abstract: A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.

Abstract translation: 掺杂方法包括：将含有选自基本上由氢，氮，氧和碳组成的组的锑化合物的锑化合物与锑一起沉积到基材表面的第一步骤; 干燥材料溶液以在基材上形成锑化合物层的第二步骤; 以及进行热处理以使锑化合物层中的锑扩散到基板中的第三步骤。

公开(公告)号：US07598160B2

公开(公告)日：2009-10-06

申请号：US12134698

申请日：2008-06-06

Applicant: Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

Inventor： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC: H01L21/36

CPC classification number: H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Abstract translation: 提供一种制造薄膜半导体器件的方法。 半导体薄膜包括半导体薄膜和栅电极，并且通过照射能量束而将有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。