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    Production of Single Crystal CVD Diamond at Rapid Growth Rate
    32.
    发明申请
    Production of Single Crystal CVD Diamond at Rapid Growth Rate 审中-公开
    单晶CVD金刚石生长速度快

    公开(公告)号：US20100126406A1

    公开(公告)日：2010-05-27

    申请号：US12624768

    申请日：2009-11-24

    Applicant: Chih-Shiue YAN ,  Ho-kwang MAO ,  Russell J. HEMLEY ,  Qi LIANG ,  Yufei MENG

    Inventor： Chih-Shiue YAN ,  Ho-kwang MAO ,  Russell J. HEMLEY ,  Qi LIANG ,  Yufei MENG

    IPC: H01L21/322 ,  C30B25/02

    CPC classification number: C30B29/04 ,  C30B25/105 ,  C30B25/14

    Abstract: In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 μm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen.

    Abstract translation: 在通过微波等离子体辅助化学气相沉积法制造金刚石的方法中，其包括提供衬底并在包括氢气，碳源和氧气的气氛中建立微波等离子体球，压力和温度足以使金刚石沉积在所述 衬底，其中金刚石以高于400托的压力以至少200微米/小时的生长速率沉积。 从基本上不含氮的气氛或包含少量的氮气。

    Ultratough CVD single crystal diamond and three dimensional growth thereof
    34.
    发明授权
    Ultratough CVD single crystal diamond and three dimensional growth thereof 有权
    Ultratough CVD单晶金刚石及其三维生长

    公开(公告)号：US07594968B2

    公开(公告)日：2009-09-29

    申请号：US11222224

    申请日：2005-09-09

    Applicant: Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    Inventor： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    IPC: C30B29/04

    CPC classification number: C30B25/105 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B29/04

    Abstract: The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

    Abstract translation: 本发明涉及通过微波等离子体化学气相沉积生长的具有至少约30MPa m1 / 2的韧性的单晶金刚石。 本发明还涉及具有至少约30MPa m1 / 2的韧性的单晶金刚石的制造方法。 本发明还涉及在单晶金刚石基底上三维制造单晶CVD金刚石的方法。

    Low Pressure Method of Annealing Diamonds
    35.
    发明申请
    Low Pressure Method of Annealing Diamonds 审中-公开
    退火钻石的低压方法

    公开(公告)号：US20090110626A1

    公开(公告)日：2009-04-30

    申请号：US12244053

    申请日：2008-10-02

    Applicant: Russell J. Hemley ,  Ho-Kwang Mao ,  Chih-Shiue Yan ,  Yufei Meng

    Inventor： Russell J. Hemley ,  Ho-Kwang Mao ,  Chih-Shiue Yan ,  Yufei Meng

    IPC: B01J3/06 ,  A62D3/10 ,  C30B15/14

    CPC classification number: C30B29/04 ,  B01J2203/0695 ,  C30B33/02

    Abstract: The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.

    Abstract translation: 本发明涉及在低压下改进金刚石的光学性质的方法，更具体地说涉及一种制备所需光学质量的CVD金刚石的方法，其包括生长CVD金刚石并将CVD金刚石的温度从约1400℃升高 在大约1至大约760托的压力下，在金刚石稳定性场的还原气氛中，时间为约5秒至约3小时。

    Apparatus and method for diamond production
    38.
    发明申请
    Apparatus and method for diamond production 有权
    钻石生产的装置和方法

    公开(公告)号：US20050160969A1

    公开(公告)日：2005-07-28

    申请号：US11043062

    申请日：2005-01-27

    Applicant: Russell Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh Vohra

    Inventor： Russell Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh Vohra

    IPC: C30B29/04 ,  C01B31/06 ,  C23C16/27 ,  C30B25/10 ,  C30B25/16 ,  C30B21/02 ,  H05H1/24

    CPC classification number: C30B25/105 ,  C30B25/12 ,  C30B29/04 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

    Abstract translation: 一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置， 测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度 测量，基于温度测量控制生长表面的温度 杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

    Apparatus and method for diamond production
    39.
    发明授权
    Apparatus and method for diamond production 有权

    公开(公告)号：US06858078B2

    公开(公告)日：2005-02-22

    申请号：US10288499

    申请日：2002-11-06

    Applicant: Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh K. Vohra

    Inventor： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh K. Vohra

    IPC: C30B29/04 ,  C01B31/06 ,  C23C16/27 ,  C30B25/10 ,  C30B25/16 ,  C30B25/02 ,  C30B25/12

    CPC classification number: C30B25/105 ,  C30B25/12 ,  C30B29/04 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

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