中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.017 seconds)

    Colorless single-crystal CVD diamond at rapid growth rate
    1.
    发明授权
    Colorless single-crystal CVD diamond at rapid growth rate 有权
    无色单晶CVD金刚石生长速度快

    公开(公告)号：US07883684B2

    公开(公告)日：2011-02-08

    申请号：US11438260

    申请日：2006-05-23

    Applicant: Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    Inventor： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    IPC: C30B23/00 ,  C01B31/06

    CPC classification number: C30B29/04 ,  C01B32/25 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B25/105

    Abstract: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.

    Abstract translation: 本发明涉及以快速生长速度生产无色单晶金刚石的方法。 用于金刚石生产的方法包括控制金刚石的生长表面的温度，使得穿过金刚石的生长表面的所有温度梯度小于约20℃，并且通过微波等离子体化学气相沉积生长单晶金刚石 在具有气氛的沉积室中的生长温度下金刚石的生长表面，其中所述气氛包含每单位H 2约8％至约20％CH 4和每单位CH 4约5至约25％O 2。 本发明的方法可以生产大于10克拉的钻石。 使用本发明的方法的生长速度可以大于50μm/小时。

    Apparatus and method for diamond production
    5.
    发明申请
    Apparatus and method for diamond production 有权
    钻石生产的装置和方法

    公开(公告)号：US20070193505A1

    公开(公告)日：2007-08-23

    申请号：US11785996

    申请日：2007-04-23

    Applicant: Russell Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh Vohra

    Inventor： Russell Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh Vohra

    IPC: C30B11/00 ,  C30B29/04 ,  C30B15/26 ,  C30B13/00

    CPC classification number: C30B25/105 ,  C30B25/12 ,  C30B29/04 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

    Abstract translation: 一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置， 测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度 测量，基于温度测量控制生长表面的温度 杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

    LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)
    8.
    发明公开
    LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS) 审中-公开

    公开(公告)号：US20240344236A1

    公开(公告)日：2024-10-17

    申请号：US18632829

    申请日：2024-04-11

    Applicant: Chih Shiue YAN

    Inventor： Chih Shiue YAN

    IPC: C30B25/18 ,  C30B25/10 ,  C30B29/04 ,  C30B33/04

    CPC classification number: C30B25/186 ,  C30B25/105 ,  C30B29/04 ,  C30B33/04

    Abstract: Disclosed is a manufacturing method of a diamond substrate, comprising a seed crystal preparing step of preparing seed crystal for a single crystal of high temperature/high pressure grown diamond or for a single crystal of vapor deposition grown diamond, a first growing step of growing the seed crystal through microwave plasma chemical vapor deposition method to obtain a first crystal, a second growing step of growing the first crystal through microwave plasma chemical vapor deposition method to obtain a second crystal, and a third growth step of growing the second crystal through a microwave plasma chemical vapor deposition method to obtain a diamond substrate.

    Apparatus and method for diamond production
    9.
    发明授权
    Apparatus and method for diamond production 有权
    钻石生产的装置和方法

    公开(公告)号：US07452420B2

    公开(公告)日：2008-11-18

    申请号：US11785996

    申请日：2007-04-23

    Applicant: Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh K. Vohra

    Inventor： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan ,  Yogesh K. Vohra

    IPC: C30B25/12

    CPC classification number: C30B25/105 ,  C30B25/12 ,  C30B29/04 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016 ,  Y10T117/108

    Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

    Abstract translation: 一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的散热支架，非接触式温度测量装置， 测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度 测量，基于温度测量控制生长表面的温度 杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

    Laser uses for single-crystal CVD Diamond
    10.
    发明申请
    Laser uses for single-crystal CVD Diamond 有权
    激光用于单晶CVD钻石

    公开(公告)号：US20080205456A1

    公开(公告)日：2008-08-28

    申请号：US12010613

    申请日：2008-01-28

    Applicant: Russell J. Hemley ,  Ho-Kwang Mao ,  Chih-Shiue Yan

    Inventor： Russell J. Hemley ,  Ho-Kwang Mao ,  Chih-Shiue Yan

    IPC: H01S3/16

    CPC classification number: C30B29/04 ,  C30B25/105 ,  C30B25/12 ,  H01S3/0405 ,  H01S3/0612 ,  H01S5/02484

    Abstract: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a χ(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.

    Abstract translation: 本发明涉及通过化学气相沉积生产的单晶金刚石的新型激光相关用途。 一种这样的用途是作为激光器的散热器; 另一个这样的用途是作为变频器。 本发明还涉及用于包含单晶金刚石的拉曼激光转换器的奇异（3）非线性晶体材料。

Patent Agency Ranking