公开(公告)号：US20150087101A1

公开(公告)日：2015-03-26

申请号：US14294731

申请日：2014-06-03

Applicant: Silicon Optronics, Inc.

Inventor： Pai-Chun ZUNG

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the wafer, in which the plurality of through silicon vias is electrically connected to the plurality of sensing arrays. A filter layer is formed on the plurality of sensing arrays after the plurality of through silicon vias is formed. A cover plate is attached to the front side of the wafer to cover the filter layer.

Abstract translation: 一种形成半导体器件的方法包括提供具有多个芯片区域的晶片，其中每个芯片区域在晶片的前侧包括感测阵列。 多个贯通硅通孔从晶片的背面在晶片中形成，其中多个通孔硅通孔电连接到多个感测阵列。 在形成多个通孔之后，在多个感测阵列上形成滤光层。 盖板附接到晶片的前侧以覆盖滤光层。

公开(公告)号：US20130327923A1

公开(公告)日：2013-12-12

申请号：US13898905

申请日：2013-05-21

Applicant: Silicon Optronics, Inc.

Inventor： Xinping He

IPC: H04N5/353

CPC classification number: H04N5/353 ,  H04N5/3535 ,  H04N5/355 ,  H04N5/37452

Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.

Abstract translation: 公开了一种高动态范围CMOS图像传感器。 图像传感器的像素包含像素内存。 此外，像素可以具有变化的积分周期。 积分周期部分地由先前积分周期中存储在像素内存中的信号确定。

公开(公告)号：US20210111201A1

公开(公告)日：2021-04-15

申请号：US15931972

申请日：2020-05-14

Applicant: Silicon Optronics, Inc.

Inventor： Ming-Xiang LI ,  Bo-Ray LEE ,  Yu-Yuan YAO

IPC: H01L27/146

Abstract: An image sensor structure including: a substrate, having a first conductive type; a first well region and a second well region disposed in the substrate and spaced apart; an isolation region disposed in the first well region; a gate disposed on the substrate and between the first well region and the second well region; and a pinned photodiode disposed in the substrate and between the first well region and the second well region is provided. The pinned photodiode includes: a first doping region disposed in the substrate and having a first doping concentration and the first conductive type; and a second doping region disposed on the first doping region and having a second doping concentration opposite to the first conductive type. One or both of the first doping region and the second doping region is non-uniform and the first doping concentration is greater than the second doping concentration.

公开(公告)号：US20200295076A1

公开(公告)日：2020-09-17

申请号：US16533390

申请日：2019-08-06

Applicant: Silicon Optronics, Inc.

Inventor： Bo-Ray LEE

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate, a first annular doped area, a second annular doped area, an annular isolation area, a photoelectric conversion area, a voltage conversion area, and a gate structure. The first annular doped area is disposed in the semiconductor substrate and includes a first type dopant. The second annular doped area is disposed in the semiconductor substrate, and over the first annular doped area, the second annular doped region includes a second type dopant. The annular isolation area is disposed in the semiconductor substrate and over the second annular doped area. The photoelectric conversion area is disposed in the semiconductor substrate surrounded by the annular isolation area. The voltage conversion area is disposed in the semiconductor substrate surrounded by the annular isolation area. The gate structure is disposed on the semiconductor substrate.

公开(公告)号：US10678378B2

公开(公告)日：2020-06-09

申请号：US15883918

申请日：2018-01-30

Applicant: Silicon Optronics, Inc.

Inventor： Xinping He

IPC: G06K9/28 ,  G06F3/042 ,  G06K9/20 ,  G06K9/00

Abstract: The invention provides an optical fingerprint sensor including: an image sensing layer having an array composed of a plurality of sensing blocks; a collimating layer disposed on the image sensing layer and having a plurality of through holes penetrating from the top surface to the bottom surface of the collimating layer; a light guiding layer disposed in the collimating layer, and a glass cover layer disposed on the light guiding layer, the top surface of the glass cover layer receiving a finger touch, wherein the image resolution of the optical fingerprint sensor is defined by the number of sensing blocks, and there are a plurality of through holes directly above each of the sensing blocks.

公开(公告)号：US20190181164A1

公开(公告)日：2019-06-13

申请号：US15876704

申请日：2018-01-22

Applicant: Silicon Optronics, Inc.

Inventor： Jun- Bo CHEN

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a substrate, a plurality of photoelectric conversion units for collecting image signals disposed in the substrate, a first dielectric layer disposed upon the substrate, a plurality of metal layers disposed in the first dielectric layer, a trench disposed in the first dielectric layer and located between the adjacent metal layers, a filling material filled in the trench, a second dielectric layer disposed upon the first dielectric layer, and a light source or a detected object disposed over the second dielectric layer. The metal layer adjacent to the substrate is defined as a first metal layer. The metal layer adjacent to the top of the first dielectric layer is defined as a top metal layer. The trench extends from the top of the first dielectric layer towards the substrate to the first metal layer.

公开(公告)号：US20180354781A1

公开(公告)日：2018-12-13

申请号：US15855097

申请日：2017-12-27

Applicant: Silicon Optronics, Inc.

Inventor： Chi-Hsing HSU

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00 ,  B01L3/00

CPC classification number: B81B7/0006 ,  B01L3/508 ,  B01L2200/02 ,  B01L2200/12 ,  B01L2300/04 ,  B01L2300/0819 ,  B81B2201/0214 ,  B81C1/00095 ,  B81C1/00206 ,  B81C1/00888 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/214 ,  H01L2224/95001

Abstract: A biosensor package structure is provided. The biosensor package structure includes a protection layer and a redistribution layer disposed over the protection layer. The protection layer has a plurality of openings exposing the redistribution layer. The biosensor package structure includes at least one die disposed over the protection layer and the redistribution layer, a plurality of pads disposed on a lower surface of the die, and a plurality of vias disposed between the pads and the redistribution layer. The biosensor package structure includes a dielectric material disposed over the protection layer and the redistribution layer and adjacent to the die, pads and vias. The biosensor package structure further includes at least one biosensing region at the top portion of the die. The top surfaces of the pads are disposed at a level that is lower than the top surface of the biosensing region and higher than the bottom surface of the die.

公开(公告)号：US20180329577A1

公开(公告)日：2018-11-15

申请号：US15883918

申请日：2018-01-30

Applicant: Silicon Optronics, Inc.

Inventor： XINPING HE

IPC: G06F3/042

CPC classification number: G06F3/0421 ,  G06F2203/04103 ,  G06K9/0004 ,  G06K9/209

Abstract: The invention provides an optical fingerprint sensor including: an image sensing layer having an array composed of a plurality of sensing blocks; a collimating layer disposed on the image sensing layer and having a plurality of through holes penetrating from the top surface to the bottom surface of the collimating layer; a light guiding layer disposed in the collimating layer, and a glass cover layer disposed on the light guiding layer, the top surface of the glass cover layer receiving a finger touch, wherein the image resolution of the optical fingerprint sensor is defined by the number of sensing blocks, and there are a plurality of through holes directly above each of the sensing blocks.

公开(公告)号：US09837461B1

公开(公告)日：2017-12-05

申请号：US15418433

申请日：2017-01-27

Applicant: Silicon Optronics, Inc.

Inventor： Yu-Yuan Yao

IPC: H01L27/146 ,  H01L27/14

CPC classification number: H01L27/14645 ,  H01L27/1463

Abstract: An image sensor device is provided. The image sensor device includes a substrate, a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, a plurality of isolation structures, a first doped region, and a second doped region. The first, second, and third photoelectric conversion units are disposed in the substrate. The second photoelectric conversion unit is located between the first photoelectric conversion unit and the third photoelectric conversion unit. The isolation structures are disposed in the substrate between the photoelectric conversion units. The first doped region is formed in the substrate below the isolation structures. The first doped region extends below the third photoelectric conversion unit. The second doped region is formed in the substrate below a part of the first doped region. The second doped region extends below the second photoelectric conversion unit.

公开(公告)号：US09406708B2

公开(公告)日：2016-08-02

申请号：US14196759

申请日：2014-03-04

Applicant: Silicon Optronics, Inc.

Inventor： Yu-Yuan Yao

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract translation: 本发明提供了一种图像传感器装置，包括基板，形成在基板中的通道，形成在位于通道一侧的基板中的光电转移区域，形成在位于该基板的另一侧的基板中的电压转移区域 形成在所述基板上的第一栅极电介质层，形成在所述基板上的第二栅极介电层，其中所述第一栅极介电层和所述第二栅极介电层在所述沟道上方具有接头，并且所述第一栅极介电层的厚度 比第二栅极电介质层的厚度厚，并且形成在第一栅极介电层和第二栅极a上的栅极是电介质层。 本发明还提供了一种用于制造图像传感器装置的方法。