公开(公告)号：US06417092B1

公开(公告)日：2002-07-09

申请号：US09543149

申请日：2000-04-05

Applicant: Sanjeev Jain ,  Somnath Nag ,  Gerrit Kooi ,  M. Ziaul Karim ,  Kenneth P. MacWilliams

Inventor： Sanjeev Jain ,  Somnath Nag ,  Gerrit Kooi ,  M. Ziaul Karim ,  Kenneth P. MacWilliams

IPC: H01L214763

CPC classification number: H01L21/76829 ,  H01L21/76801 ,  H01L21/76813 ,  H01L21/76834

Abstract: An amorphous material containing silicon, carbon, hydrogen and nitrogen, provides a barrier/etch stop layer for use with low dielectric constant insulating layers and copper interconnects. The amorphous material is prepared by plasma assisted chemical vapor deposition (CVD) of alklysilanes together with nitrogen and ammonia. Material that at the same time has a dielectric constant less than 4.5, an electrical breakdown field about 5 MV/cm, and a leakage current less than or on the order of 1 nA/cm2 at a field strength of 1 Mv/cm has been obtained. The amorphous material meets the requirements for use as a barrier/etch stop layer in a standard damascene fabrication process.

Abstract translation: 含有硅，碳，氢和氮的无定形材料提供了用于低介电常数绝缘层和铜互连的屏障/蚀刻停止层。 无定形材料通过烷基硅烷与氮和氨的等离子体辅助化学气相沉积（CVD）制备。 介电常数小于4.5的材料，电击穿场约为5MV / cm，漏电流小于或等于1nA / cm 2，场强为1Mv / cm 获得。 非晶材料满足在标准镶嵌制造工艺中用作阻挡层/蚀刻停止层的要求。