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    LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY
    32.
    发明申请
    LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY 有权
    光接收元件，光接收元件阵列，混合型检测装置，光传感器装置和用于产生接收元件阵列的方法

    公开(公告)号：US20120298957A1

    公开(公告)日：2012-11-29

    申请号：US13520007

    申请日：2011-03-10

    Applicant: Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

    Inventor： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

    IPC: H01L31/0352 ,  H01L31/18

    CPC classification number: H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

    Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

    Abstract translation: 本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。 光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至 通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离， 在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

    Manufacturing method of electronic element
    33.
    发明授权
    Manufacturing method of electronic element 有权
    电子元件的制造方法

    公开(公告)号：US08258061B2

    公开(公告)日：2012-09-04

    申请号：US12010517

    申请日：2008-01-25

    Applicant: Yasuhiro Iguchi ,  Nobuyuki Mitsui

    Inventor： Yasuhiro Iguchi ,  Nobuyuki Mitsui

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L31/184 ,  H01L33/0062 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.

    Abstract translation: 去除外延晶片的圆周部分以除去形成在周向倒角中的异常生长的升高部分。 外周部分的外延层以宽度q = t至5t去除，其中t为外延层的厚度，从而露出基板的表面。 因此，可以防止加工步骤中的外延层的破裂。

    Photodetector and production method thereof
    35.
    发明授权
    Photodetector and production method thereof 有权
    光电检测器及其制造方法

    公开(公告)号：US07875906B2

    公开(公告)日：2011-01-25

    申请号：US12163039

    申请日：2008-06-27

    Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

    Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

    IPC: H01L31/107

    CPC classification number: H01L27/14643 ,  H01L27/14694 ,  H01L31/101 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

    Abstract translation: 本发明提供了一种具有在近红外区域具有灵敏度并且抑制暗电流的含N的InGaAs基吸收层的光电检测器及其制造方法。 光电检测器设置有InP基板1，位于InP基板1上方的含有N的InGaAs基吸收层3，位于含N的InGaAs基吸收层3上方的窗口层5和InGaAs缓冲层4 位于含N的InGaAs基吸收层3和窗口层5之间。

    LIGHT RECEIVING DEVICE
    36.
    发明申请
    LIGHT RECEIVING DEVICE 有权
    灯接收装置

    公开(公告)号：US20090321785A1

    公开(公告)日：2009-12-31

    申请号：US12522296

    申请日：2008-01-07

    Applicant: Yasuhiro Iguchi ,  Yuichi Kawamura

    Inventor： Yasuhiro Iguchi ,  Yuichi Kawamura

    IPC: H01L31/0304

    CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  Y02E10/544

    Abstract: A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacking a larger layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, larger lattice constant than that of InP and thickness between hc and 11hc, the critical thickness hc being determined as hc=b(1−ν cos2α){log(hc/b)+1}/8πf(1+ν)cos λ and a smaller layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, smaller lattice constant than that of InP and thickness between hc and 11hc; absolute value of lattice mismatch of the larger layer and the smaller layer to the InP substrate is at least 0.5% and at most 5%; at least one of the layers has absorption edge wavelength of 2.0 μm to 3.0 μm; total thickness of respective layers is 2.0 μm to 4.0 μm; and thickness-weighted average lattice mismatch is set to be at most ±0.2%.

    Abstract translation: 提供了具有小的暗电流并且能够以高灵敏度感测波长为2.0μm至3.0μm的光的光接收装置。 光接收装置具有InP基板，并且通过交替堆叠由5组中具有至多5％的氮含量的GaInNAsSbP混合晶体形成的较大层而形成的光接收层，其比InP的晶格常数大，hc和 如图11hc所示，临界厚度hc被确定为hc = b（1-nu cos2alpha）{log（hc / b）+1} / 8pif（1 + nu）cosλ，由GaInNAsSbP混合晶体形成的较小的层， 5组最多5％，晶格常数小于InP，厚度在hc和11hc之间; 较大层和较小层与InP衬底的晶格失配的绝对值为至少0.5％且至多5％; 所述层中的至少一层具有2.0μm至3.0μm的吸收边缘波长; 各层的总厚度为2.0μm〜4.0μm; 厚度加权平均晶格失配最大为±0.2％。

    Photodetector
    37.
    发明授权
    Photodetector 有权
    光电检测器

    公开(公告)号：US07508046B2

    公开(公告)日：2009-03-24

    申请号：US11709393

    申请日：2007-02-21

    Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

    Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

    IPC: H01L31/0224

    CPC classification number: H01L31/02165 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L31/022416 ,  H01L31/03046

    Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

    Abstract translation: 具有抑制光串扰的机构的光电检测器包括设置在公共半导体衬底上的多个光电二极管，每个光电二极管包括在公共半导体衬底上外延生长并设有外延侧电极的吸收层。 每个光电二极管设置有至少一个环形或月牙形的外延侧电极，仅将引导到相应的光电二极管的入射光聚光的入射侧限制的聚光部分，以及放置在 与吸收层的光入射侧相对的一侧，允许从光入射侧进入的光容易地从光电二极管发射出。

    Rear-Illuminated -Type Photodiode Array
    38.
    发明申请
    Rear-Illuminated -Type Photodiode Array 失效
    后照明型光电二极管阵列

    公开(公告)号：US20070096178A1

    公开(公告)日：2007-05-03

    申请号：US11557427

    申请日：2006-11-07

    Applicant: Yasuhiro Iguchi

    Inventor： Yasuhiro Iguchi

    IPC: H01L31/113 ,  H01L31/062

    CPC classification number: H01L27/1446

    Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.

    Abstract translation: 背照式光电二极管阵列具有（a）第一导电型半导体基板，（b）第一导电型电极，其设置在半导体基板的后侧，并且具有一或二个开口 （c）设置在第一导电型电极的每个开口处的抗反射涂层，（d）形成在基板的正面侧的第一导电型吸收层，（e） 设置在吸收层上并具有比吸收层的吸收边长波长的吸收边缘波长的漏光波吸收层，（f）多个第二导电型区域， 光吸收层从上表面延伸到吸收层一定程度，并且在相反侧的抗反射涂层的位置一一或二维地排列，（g）一个 设置在每个第二导电型区域的顶表面上的导电型电极。

    Method of diffusing zinc into article and method of heating article
    39.
    发明授权
    Method of diffusing zinc into article and method of heating article 失效
    将锌扩散成物的方法和加热物品的方法

    公开(公告)号：US06830995B2

    公开(公告)日：2004-12-14

    申请号：US10373185

    申请日：2003-02-26

    Applicant: Yasuhiro Iguchi ,  Takashi Ishizuka

    Inventor： Yasuhiro Iguchi ,  Takashi Ishizuka

    IPC: H01L2124

    CPC classification number: H01L29/66318 ,  H01L21/2233 ,  H01L21/3245

    Abstract: Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including tin, indium, and phosphorus as main constituents; and (b) raising a temperature of the article in an atmosphere containing vapor of phosphorus supplied from the alloy.

    Abstract translation: 本发明提供一种加热含有磷作为V族构成元素的含有III-V族化合物半导体的表面的半导体基板的方法。 该方法包括以下步骤：（a）在加热炉中提供合金，该合金包括锡，铟和磷为主要成分; 和（b）在含有从合金供给的磷的蒸汽的气氛中提高制品的温度。

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