Abstract:
A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux.
Abstract:
A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.
Abstract:
The present invention provides a horizontal linear vibrator which can increase vibration strength while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The bracket and the casing form the internal space therein. A coil is provided above the bracket such that the center axis thereof is oriented in a horizontal direction. The vibration unit is disposed through the coil and comprises a magnetic field generating unit and a weight. The magnetic field generating unit includes a magnet assembly and a yoke. The magnet assembly has magnets which are provided on opposite sides of a magnetic body core such that the similar magnetic poles of the magnets face each other. The weight is mounted to the magnetic field generating unit. The springs are coupled to the casing or the bracket and elastically support the vibration unit.
Abstract:
A linear vibrator is disclosed. The linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively, and a plurality of leaf springs, which are interposed between the magnet and the base. Here, the plurality of leaf springs face one another and are coupled to one another Thus, the linear vibrator can increase the range of vibration displacement in a structure and increase the amount of vibration in the linear vibrator. Also, even though the linear vibrator becomes thinner, the range of displacement can be increased because the weight is vibrated horizontally.
Abstract:
Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.
Abstract:
A method and/or apparatus are provided for protecting control information during broadcasts in a system where primary and second mobile broadcast control messages (PMBCM and SMBCM) are utilized. In order to protect the SMBCM, a first hash information instance is computed based on hashes for each a plurality of control data blocks for the SMBCM. The first hash information instance is appended to the PMBCM. Error-correcting code words are generated for the plurality of hashes for the plurality of control data blocks for the SMBCM. These error-correcting code words are appended to the control data blocks of the SMBCM. A receiver uses the first hash instance information in the PMBCM to determine if any control data blocks of the SMBCM are corrupt. If so, the error-correcting code words may be used to reconstruct the corrupted hash(es) for the control data block(s) in order to authenticate the remaining control data blocks.
Abstract:
A plasma display device is disclosed. The plasma display device includes a plasma display panel (PDP), a printed circuit board assembly (PBA), and a flexible printed circuit (FPC) electrically connecting electrodes of the PBA and the PDP. In some embodiments, the FPC is formed of two films with signal lines therebetween and electrodes on opposite sides.
Abstract:
A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range.
Abstract:
The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.
Abstract:
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.