METHOD AND DEVICE FOR CONTROLLING SENSITIVITY OF A SPAD MACRO-CELL

    公开(公告)号:US20250147159A1

    公开(公告)日:2025-05-08

    申请号:US18838535

    申请日:2023-02-02

    Applicant: ams-OSRAM AG

    Abstract: A SPAD macro-cell comprises an array of SPAD unit, each of which comprises a SPAD and a quenching circuit for the SPAD, a combination tree to combine output signals from the SPAD units and a time-to-digital converter (TDC) operably connected to an output of the combination tree. The SPAD macro-cell is divided to a plurality of sub-cells. The SPAD macro-cell further comprises a control circuit configured to enable at least one or some SPAD units in each sub-cell in a time period and enable another one or some other SPAD units in each sub-cell in the next time period.

    IMAGE SENSOR WITH TEMPERATURE SENSING PIXELS

    公开(公告)号:US20240414453A1

    公开(公告)日:2024-12-12

    申请号:US18717439

    申请日:2022-10-06

    Applicant: ams-OSRAM AG

    Abstract: The present disclosure provides an image sensor with temperature sensing including a pixel array having a plurality of pixels, wherein at least one of the pixels includes a photodiode and is configured to be operated in a light sensing mode for sensing light radiation incident on the photodiode, and in a temperature sensing mode for sensing a temperature of the at least one pixel. The image sensor is configured so that, in the light sensing mode of the at least one pixel, a voltage across the photodiode caused by the light radiation incident on the photodiode is evaluated, and, in the temperature sensing mode of the at least one pixel, a current is forced through the photodiode and the voltage across the photodiode, caused by the current forced through the photodiode, is evaluated.

    HIGH-SIDE DRIVER CIRCUIT
    35.
    发明申请

    公开(公告)号:US20240413820A1

    公开(公告)日:2024-12-12

    申请号:US18699312

    申请日:2022-10-11

    Applicant: ams-OSRAM AG

    Inventor: Dominik RUCK

    Abstract: A high-side driver circuit includes a regulator circuit configured to regulate a gate voltage of a first transistor and at least one second transistor configured to drive a high-side of a load. The circuit also includes a first buffer configured to copy a voltage at a gate of the first transistor to a gate of the at least one second transistor, and a second buffer configured to copy a voltage at the high side of the load to a source of first transistor. Also disclosed is a device including the high-side driver circuit, and a system including the device and at least one array of laser diodes.

    Oscillator circuit arrangement
    36.
    发明授权

    公开(公告)号:US12113479B2

    公开(公告)日:2024-10-08

    申请号:US18257051

    申请日:2021-12-14

    Applicant: ams-OSRAM AG

    CPC classification number: H03B5/24

    Abstract: An oscillator circuit arrangement includes a switched capacitor circuit at least one capacitor selectively coupled to one of a supply terminal and a terminal for ground potential. A chopper circuit is disposed between the switched capacitor circuit and a comparator. The chopper circuit selectively couples one of input terminals and a reference potential terminal to its output terminals. A buffer circuit is coupled to the output of the comparator circuit. The buffer circuit is connected to the switched capacitor circuit and to the chopper circuit to control selective coupling operations therein.

    SEMICONDUCTOR SUBSTRATE COMPRISING A THROUGH-SUBSTRATE-VIA AND METHOD FOR PRODUCING THEREOF

    公开(公告)号:US20240170371A1

    公开(公告)日:2024-05-23

    申请号:US18283837

    申请日:2022-03-09

    Applicant: ams-OSRAM AG

    CPC classification number: H01L23/481 H01L21/76832 H01L21/76898 H01L23/53223

    Abstract: A semiconductor device includes a substrate—with a rear surface and a main surface, an intermetal dielectric on the main surface of substrate, a metal layer embedded in the intermetal dielectric. The metal layer includes a top barrier layer. The top barrier layer is at a side of the metal layer facing away from the substrate. The semiconductor device also includes a through-substrate-via (TSV) reaching from the rear surface of the substrate to the top barrier layer of the metal layer. The TSV includes a metallization configured to electrically contact the metal layer from the rear surface of the substrate. The TSV includes a via hole. The via hole penetrates the substrate and the intermetal dielectric between the substrate and the metal layer. The via hole further penetrates the metal layer up to the top barrier layer.

    Sensing system
    38.
    发明授权

    公开(公告)号:US11946801B2

    公开(公告)日:2024-04-02

    申请号:US18042477

    申请日:2021-08-17

    Applicant: ams-OSRAM AG

    CPC classification number: G01J1/4204 G01J1/0219 G01J1/0488 G01J2001/4252

    Abstract: A sensing system comprising a light filtering apparatus configured to pass a first wavelength of light corresponding to an emission spectrum characteristic of Mercury. The sensing system comprises a sensor configured to receive light passed by the light filtering apparatus and produce a sensor response that is indicative of the light passed by the light filtering apparatus. The sensing system comprises a processor configured to use the sensor response to distinguish between light emitted by a fluorescent light source and light emitted by a light emitting diode.

    PHOTODIODE DEVICE WITH ENHANCED CHARACTERISTICS

    公开(公告)号:US20240105740A1

    公开(公告)日:2024-03-28

    申请号:US18256286

    申请日:2021-12-08

    Applicant: AMS-OSRAM AG

    Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. The main surface includes at least one incidence area for electromagnetic radiation. A plurality of doped wells of a second type of electric conductivity are arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The doped wells and the substrate are electrically contactable. The doped wells are arranged along a perimeter of the at least one incidence area, such that a center region of the incidence area is free from the doped wells.

    OSCILLATOR CIRCUIT ARRANGEMENT
    40.
    发明公开

    公开(公告)号:US20240072728A1

    公开(公告)日:2024-02-29

    申请号:US18257051

    申请日:2021-12-14

    Applicant: ams-OSRAM AG

    CPC classification number: H03B5/24

    Abstract: An oscillator circuit arrangement includes a switched capacitor circuit at least one capacitor selectively coupled to one of a supply terminal and a terminal for ground potential. A chopper circuit is disposed between the switched capacitor circuit and a comparator. The chopper circuit selectively couples one of input terminals and a reference potential terminal to its output terminals. A buffer circuit is coupled to the output of the comparator circuit. The buffer circuit is connected to the switched capacitor circuit and to the chopper circuit to control selective coupling operations therein.

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