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公开(公告)号：US20240055464A1
公开(公告)日：2024-02-15
申请号：US18255110
申请日：2021-11-23
Applicant: ams-OSRAM AG
Inventor： José Manuel GARCÍA GONZÁLEZ , Joel BERTOMEU MESTRE , Harald ETSCHMAIER , Rafael SERRANO GOTARREDONA
IPC: H01L27/146 , G01T1/24 , A61B6/00 , H04N25/30 , H04N25/78
CPC classification number: H01L27/14659 , G01T1/247 , A61B6/4233 , H04N25/30 , H04N25/78
Abstract: An X-ray radiation sensor device may include a direct X-ray conversion layer, a plurality of electrodes to provide an electric charge in response to an interaction of an X-ray photon within the direct X-ray conversion layer, a plurality of pixel sensor arrays, and at least one interposer. The direct X-ray conversion layer and the plurality of electrodes are disposed on the top surface of the interposer(s). The plurality of the pixel sensor arrays is disposed on the bottom surface of the interposer(s), and the interposer(s) is configured to electrically couple each of the pixel sensor arrays to a respective portion of the plurality of electrodes.
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公开(公告)号：US20240414453A1
公开(公告)日：2024-12-12
申请号：US18717439
申请日：2022-10-06
Applicant: ams-OSRAM AG
Abstract: The present disclosure provides an image sensor with temperature sensing including a pixel array having a plurality of pixels, wherein at least one of the pixels includes a photodiode and is configured to be operated in a light sensing mode for sensing light radiation incident on the photodiode, and in a temperature sensing mode for sensing a temperature of the at least one pixel. The image sensor is configured so that, in the light sensing mode of the at least one pixel, a voltage across the photodiode caused by the light radiation incident on the photodiode is evaluated, and, in the temperature sensing mode of the at least one pixel, a current is forced through the photodiode and the voltage across the photodiode, caused by the current forced through the photodiode, is evaluated.
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