公开(公告)号：US20240071805A1

公开(公告)日：2024-02-29

申请号：US18238577

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Peipei Gao ,  Wentao Wang ,  Aniket Chitale ,  Xing Lin ,  Alexandros Demos ,  Yanfu Lu

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67069

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

公开(公告)号：US20210310125A1

公开(公告)日：2021-10-07

申请号：US17352011

申请日：2021-06-18

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44 ,  H01J37/32

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US11053591B2

公开(公告)日：2021-07-06

申请号：US16055532

申请日：2018-08-06

Applicant: ASM IP Holding B.V.

Inventor： Mingyang Ma ,  Junwei Su ,  Alexandros Demos ,  Xing Lin ,  Sam Kim ,  Gregory Michael Bartlett

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  B01J4/00 ,  C23C16/44

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US10797133B2

公开(公告)日：2020-10-06

申请号：US16014981

申请日：2018-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20250038039A1

公开(公告)日：2025-01-30

申请号：US18785702

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Ion Hong Chao ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Han Ye ,  Kishor Patil ,  Fan Gao ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/687

Abstract: A lift pin includes a lift pin body arranged along a lift pin axis having a contact pad, a stem segment, a neck segment, and a span feature. The contact pad is defined at a first end of the lift pin body, the stem segment extends from the contact pad, and the neck segment extends from the stem segment. The span feature is defined at a second end of the lift pin body, is connected to the contact pad by the neck segment and the stem segment, and has a minor and major widths. The minor width is equivalent to a neck diameter defined by the neck segment, the major with is greater than the minor width, and the major width is greater than a stem diameter defined by the stem segment. Lift pin arrangements, semiconductor processing systems, and methods of making semiconductor processing systems are also described.

公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20220298672A1

公开(公告)日：2022-09-22

申请号：US17697107

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Hichem M'Saad ,  Alexandros Demos ,  Xing Lin ,  Junwei Su ,  Matthew Goodman ,  Daw Gen Lim ,  Shujin Huang ,  Rutvij Naik

IPC: C30B25/16 ,  H01L21/66 ,  C30B25/10 ,  C30B25/12 ,  C30B23/06 ,  C23C16/52 ,  C23C16/46 ,  C23C14/54 ,  F27B17/00 ,  H05B3/00 ,  H05B1/02 ,  G01J5/00

Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

公开(公告)号：US11296189B2

公开(公告)日：2022-04-05

申请号：US17009093

申请日：2020-09-01

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30 ,  H01L29/167 ,  H01L29/24

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210102290A1

公开(公告)日：2021-04-08

申请号：US17060764

申请日：2020-10-01

Applicant: ASM IP Holding B.V.

Inventor： Tomas Hernandez Acosta ,  Alexandros Demos ,  Peter Westrom ,  Caleb Miskin ,  Amir Kajbafvala ,  Ali Moballegh

IPC: C23C16/455 ,  C23C16/52 ,  B01J4/00 ,  C23C16/46

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20190393308A1

公开(公告)日：2019-12-26

申请号：US16014981

申请日：2018-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chi-Wei Lo ,  Alexandros Demos ,  Raj Kumar

IPC: H01L29/08 ,  H01L29/267 ,  H01L21/02 ,  C23C16/30

Abstract: A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.