公开(公告)号：US20240332016A1

公开(公告)日：2024-10-03

申请号：US18742250

申请日：2024-06-13

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC: H01L21/02 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52

CPC classification number: H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20240218560A1

公开(公告)日：2024-07-04

申请号：US18397635

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Sandeep Ghosh ,  Robinson James ,  Caleb Miskin

IPC: C30B25/16 ,  C23C16/24 ,  C23C16/52 ,  C30B25/10 ,  C30B29/06 ,  G01B21/08 ,  H01L21/02

CPC classification number: C30B25/16 ,  C23C16/24 ,  C23C16/52 ,  C30B25/10 ,  C30B29/06 ,  G01B21/08 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A semiconductor processing system includes a precursor delivery arrangement, a chamber arrangement, and a controller. The chamber arrangement is connected to the precursor delivery arrangement. The controller is operatively connected to the precursor delivery arrangement and the chamber arrangement, includes a processor disposed in communication with a memory, and is responsive to instructions recorded on the memory to acquire a baseline substrate thickness profile for a selected process recipe, determine a first temperature profile setting for depositing a first material layer at low pressure for the selected process recipe, determine a high-pressure thermal offset for the first temperature profile setting, apply the high-pressure thermal offset to the first temperature profile setting to determine a second temperature profile setting, seat a first substrate on the first substrate support within the chamber arrangement and flow a second material layer precursor via the precursor delivery arrangement over the first substrate at high pressure according to the selected process recipe using the second temperature profile setting.

公开(公告)号：US20240204057A1

公开(公告)日：2024-06-20

申请号：US18540230

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: H01L29/161 ,  H01L21/02 ,  H01L21/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/161 ,  H01L21/02532 ,  H01L22/12 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: Methods for forming semiconductor stacked structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual step of a sequential deposition process. Semiconductor stacked structures including two or more bilayers of SiGe/Si with intervening interface layers are also disclosed.

公开(公告)号：US20240175138A1

公开(公告)日：2024-05-30

申请号：US18518393

申请日：2023-11-22

Applicant: ASM IP HOlding B.V.

Inventor： Fan Gao ,  Peipei Gao ,  Xing Lin ,  Arun Murali ,  Gregory Deye ,  Frederick Aryeetey ,  Amir Kajbafvala ,  Caleb Miskin ,  Alexandros Demos

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67253

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

公开(公告)号：US20220298643A1

公开(公告)日：2022-09-22

申请号：US17697079

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  H01L29/66 ,  C23C16/52 ,  G01K7/10 ,  G01J5/00 ,  C23C16/30 ,  C23C16/24

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.