公开(公告)号：US06846707B2

公开(公告)日：2005-01-25

申请号：US10604225

申请日：2003-07-02

Applicant: Chih-Chin Chang

Inventor： Chih-Chin Chang

IPC: H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and lightly doped drains (LDD) of the NLTPS TFT are formed. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.

Abstract translation: 一种形成自对准低温多晶硅薄膜晶体管（LTPS TFT）的方法。 首先，在衬底上形成N型LTPS TFT（NLTPS TFT）和P型LTPS TFT（PLTPS TFT）的有源层，并在衬底上形成栅极绝缘（GI）层。 然后，形成NLTPS TFT的源电极，漏电极和轻掺杂漏极（LDD）。 此外，在栅极绝缘层上形成有NLTPS TFT的栅电极和PLTPS TFT。 最后，PLTPS TFT的栅电极用于在PLTPS TFT的有源层中形成源电极和漏电极。