公开(公告)号：US20050135019A1

公开(公告)日：2005-06-23

申请号：US11053118

申请日：2005-02-07

Applicant: Howard Zolla ,  Edward Lee ,  Kim Lee ,  Tsann Lin ,  Chun-Ming Wang

Inventor： Howard Zolla ,  Edward Lee ,  Kim Lee ,  Tsann Lin ,  Chun-Ming Wang

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A magnetoresistive sensor having a well defined track width and method of manufacture thereof.

Abstract translation: 具有良好限定的轨道宽度的磁阻传感器及其制造方法。

公开(公告)号：US08465906B2

公开(公告)日：2013-06-18

申请号：US13081268

申请日：2011-04-06

Applicant: Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

Inventor： Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

IPC: G03F7/20 ,  G03F7/36

CPC classification number: G03F7/70433 ,  G03F1/26 ,  G03F1/32 ,  G03F1/36 ,  G03F7/70091

Abstract: A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N≧2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.

Abstract translation: 一种包括多个掩模特征的光刻掩模。 相邻的掩模特征由间隙分隔开并且彼此偏移，使得各个掩模特征具有单侧致密部分和两侧致密部分。 还有一种光刻方法，其包括提供具有偏移的，基本上透明的矩形掩模特征的N个阶梯行的基本不透明掩模的步骤，其中N是整数，N> = 2。 该方法还包括通过偶极照明通过基本上不透明掩模中的基本上透明的矩形掩模特征照亮位于下层材料上的光致抗蚀剂层，以在光致抗蚀剂层中形成2N排暴露区域。 当从光致抗蚀剂层的上方观察时，暴露区域具有基本上椭圆形或大致圆形形状。

公开(公告)号：US20130120307A1

公开(公告)日：2013-05-16

申请号：US13314331

申请日：2011-12-08

Applicant: Ya-Ting Tsai ,  Jia-Shen Hua ,  Chun-Ming Wang ,  Chien-Hsiung Chen

Inventor： Ya-Ting Tsai ,  Jia-Shen Hua ,  Chun-Ming Wang ,  Chien-Hsiung Chen

IPC: G06F3/041 ,  G06F3/045

CPC classification number: G06F3/0414 ,  H04M1/6016 ,  H04M2250/12 ,  H04M2250/22

Abstract: A handheld device includes a touch panel, a speaker, and a processor. The touch panel is operable to detect the touched area generated by an object touching the touch panel. The speaker is operable to provide sounds. The processor is connected to the touch panel and the speaker and controls the volume of the sounds provided by the speaker based on the touched area. The processor decreases the volume of the sounds when the value of the touched area is lower than a first predetermined value, and the processor increases the volume of the sounds when the value of the touched area is high than a second predetermined value. Furthermore, a method for controlling the handheld device is disclosed herein.

Abstract translation: 手持设备包括触摸面板，扬声器和处理器。 触摸面板可操作以检测由触摸触摸面板的物体产生的触摸区域。 扬声器可操作以提供声音。 处理器连接到触摸面板和扬声器，并且基于触摸的区域来控制由扬声器提供的声音的音量。 当触摸区域的值低于第一预定值时，处理器减小声音的音量，并且当触摸区域的值高于第二预定值时，处理器增加声音的音量。 此外，本文公开了一种用于控制手持设备的方法。

公开(公告)号：US08076056B2

公开(公告)日：2011-12-13

申请号：US12285466

申请日：2008-10-06

Applicant: Chun-Ming Wang ,  Steven Maxwell ,  Paul Wai Kie Poon ,  Yung-Tin Chen

Inventor： Chun-Ming Wang ,  Steven Maxwell ,  Paul Wai Kie Poon ,  Yung-Tin Chen

IPC: G03F7/26

CPC classification number: H01L21/0334 ,  H01L21/0338

Abstract: A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask.

Abstract translation: 一种制造器件的方法包括在下面的层上形成下面的掩模层，在下面的掩模层之上形成第一掩模层，对第一掩模层进行图案化以形成第一掩模特征，利用下面的掩模层来切割下面的掩模特征，使用 第一掩模作为掩模，去除第一掩模特征，并使用至少底层掩模特征作为掩模来图案化底层。

公开(公告)号：US08026172B2

公开(公告)日：2011-09-27

申请号：US12458017

申请日：2009-06-29

Applicant: Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

Inventor： Chun-Ming Wang ,  Chenche Huang ,  Masaaki Higashitani

IPC: H01L21/4763

CPC classification number: H01L21/76816 ,  H01L21/0337 ,  H01L21/31144

Abstract: One embodiment of the invention provides a method of forming a plurality of contact holes, including forming a first feature and a second feature over an underlying material, forming sidewall spacers on the first and second features, removing the first and second features without removing the sidewall spacers, forming a cover mask at least partially exposing the sidewall spacers, and etching the underlying material using the cover mask and the sidewall spacers as a mask to form the plurality of contact holes.

Abstract translation: 本发明的一个实施例提供一种形成多个接触孔的方法，包括在下面的材料上形成第一特征和第二特征，在第一和第二特征上形成侧壁间隔物，去除第一和第二特征而不移除侧壁 间隔件，形成至少部分地暴露侧壁间隔物的覆盖掩模，以及使用覆盖掩模和侧壁间隔物作为掩模蚀刻下面的材料以形成多个接触孔。

公开(公告)号：US07969641B2

公开(公告)日：2011-06-28

申请号：US12371538

申请日：2009-02-13

Applicant: Ion Bita ,  Chun-Ming Wang ,  Gang Xu

Inventor： Ion Bita ,  Chun-Ming Wang ,  Gang Xu

IPC: G02B7/02

CPC classification number: G02B26/001 ,  G02F1/133512 ,  G02F2001/13324 ,  Y02E10/52

Abstract: A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.

Abstract translation: 一种功率产生黑色掩模，包括沉积在衬底上的抗反射层，沉积在抗反射层上的第一电极层，沉积在第一电极层上的半导体层和沉积在半导体上的第二电极层 层。

公开(公告)号：US07969638B2

公开(公告)日：2011-06-28

申请号：US12101073

申请日：2008-04-10

Applicant: Gang Xu ,  Chun-Ming Wang ,  Fan Zhong ,  Qi Luo

Inventor： Gang Xu ,  Chun-Ming Wang ,  Fan Zhong ,  Qi Luo

IPC: G02F1/03 ,  G02B27/00

CPC classification number: G02B5/003 ,  G02B5/201 ,  G02B26/001

Abstract: A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.

Abstract translation: 使用单个掩码进程创建一个细黑色掩模。 介电层沉积在衬底上。 在电介质层上沉积吸收层，在吸收层上沉积反射层。 使用单个掩模工艺对吸收层和反射层进行构图。

公开(公告)号：US20110058243A1

公开(公告)日：2011-03-10

申请号：US12946583

申请日：2010-11-15

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G02B26/02 ,  H01L21/302

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US07786015B2

公开(公告)日：2010-08-31

申请号：US12149151

申请日：2008-04-28

Applicant: Yung-Tin Chen ,  Chun-Ming Wang ,  Steven J. Radigan ,  Christopher J. Petti ,  Steven Maxwell

Inventor： Yung-Tin Chen ,  Chun-Ming Wang ,  Steven J. Radigan ,  Christopher J. Petti ,  Steven Maxwell

IPC: H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1021

Abstract: A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, selectively removing the spaced apart features, filling a space between a first sidewall spacer and a second sidewall spacer with a filler feature, selectively removing the sidewall spacers to leave a plurality of the filler features spaced apart from each other, and etching the at least one device layer using the filler feature as a mask.

Abstract translation: 制造半导体器件的方法包括在衬底上形成至少一个器件层，在所述至少一个器件层上形成至少两个间隔的特征，在所述至少两个特征上形成侧壁间隔物，选择性地去除间隔开的特征， 用填料特征填充第一侧壁间隔物和第二侧壁间隔物之间​​的空间，选择性地去除侧壁间隔物以留下彼此间隔开的多个填料特征，并使用填料特征来蚀刻至少一个器件层，如 一个面具

公开(公告)号：US20100167502A1

公开(公告)日：2010-07-01

申请号：US12318590

申请日：2008-12-31

Applicant: Bing K. Yen ,  Chun-Ming Wang ,  Yung-Tin Chen ,  Steven Maxwell

Inventor： Bing K. Yen ,  Chun-Ming Wang ,  Yung-Tin Chen ,  Steven Maxwell

IPC: H01L21/36 ,  H01L21/467

CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/3086 ,  H01L27/101 ,  H01L27/1021

Abstract: A method of making a device is disclosed including: forming a first hard mask layer over an underlying layer; forming a first imprint resist layer over the underlying layer; forming first features over the first hard mask layer by bringing a first imprint template in contact with the first imprint resist layer; forming a first spacer layer over the first features; etching the first spacer layer to form a first spacer pattern and to expose top of the first features; removing the first features; patterning the first hard mask, using the first spacer pattern as a mask, to form first hard mask features; and etching at least part of the underlying layer using the first hard mask features as a mask.