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公开(公告)号：US09352150B2
公开(公告)日：2016-05-31
申请号：US14864959
申请日：2015-09-25
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Thomas Marzano , Keith W. Seitz , Steven W. Winn , Christine A. Frysz , Richard L. Brendel , Jason Woods , Dominick J. Frustaci , Xiaohong Tang , William C. Thiebolt
IPC: H01G4/35 , A61N1/375 , A61N1/08 , A61N1/05 , H01G2/10 , H01R43/00 , H01G4/005 , H01G4/12 , H01G4/40 , H02G3/22 , A61N1/372 , C22C29/12
CPC classification number: A61N1/3754 , A61N1/05 , A61N1/08 , A61N1/372 , A61N1/375 , B23K35/3013 , C22C29/12 , H01G2/103 , H01G4/005 , H01G4/12 , H01G4/30 , H01G4/35 , H01G4/40 , H01R43/00 , H02G3/22 , Y10T156/1052
Abstract: A co-connected hermetic feedthrough, feedthrough capacitor, and leadwire assembly includes a dielectric substrate with a via hole disposed through the dielectric substrate from a body fluid side to a device side. A conductive fill is disposed within the via forming a hermetic seal and is electrically conductive between the body fluid side and the device side. A feedthrough capacitor is attached to the dielectric substrate and includes a capacitor dielectric substrate, an unfilled capacitor via hole including an inner metallization, a set of capacitor active electrode plates electrically coupled to the inner metallization, an outer metallization disposed and a set of capacitor ground electrode plates electrically coupled to the outer metallization. A conductive leadwire is disposed within the unfilled capacitor via hole. An electrical joint connects the conductive fill, the capacitor inner metallization along with the capacitor active electrode plates and the conductive leadwire.
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32.发明申请HERMETICALLY SEALED FEEDTHROUGH WITH CO-FIRED FILLED VIA AND CONDUCTIVE INSERT FOR AN ACTIVE IMPLANTABLE MEDICAL DEVICE 有权通过与激活的可植入医疗装置的通过和导电插入的共同密封进行密封公开(公告)号：US20150314131A1
公开(公告)日：2015-11-05
申请号：US14797123
申请日：2015-07-11
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Xiaohong Tang , William C. Thiebolt , Christine A. Frysz , Keith W. Seitz , Richard L. Brendel , Thomas Marzano , Jason Woods , Dominick J. Frustaci , Steven W. Winn
CPC classification number: A61N1/3754 , A61N1/05 , A61N1/372 , A61N1/375 , B22F2998/10 , C22C29/12 , H01G2/103 , H01G4/35 , H01R43/00 , Y10T156/1052 , B22F1/0059 , B22F3/10
Abstract: A hermetically sealed feedthrough for attachment to an active implantable medical device includes a dielectric substrate configured to be hermetically sealed to a ferrule or an AIMD housing. A via hole is disposed through the dielectric substrate from a body fluid side to a device side. A conductive fill is disposed within the via hole forming a filled via electrically conductive between the body fluid side and the device side. A conductive insert is at least partially disposed within the conductive fill. Then, the conductive fill and the conductive insert are co-fired with the dielectric substrate to form a hermetically sealed and electrically conductive pathway through the dielectric substrate between the body fluid side and the device side.
Abstract translation: 用于附接到有源可植入医疗装置的气密密封馈通包括构造成气密地密封到套圈或AIMD壳体的电介质衬底。 通孔通过电介质基板从体液侧设置到器件侧。 导电填料设置在通孔内，形成在体液侧和装置侧之间经过导电的填充通孔。 导电插入件至少部分地设置在导电填充物内。 然后，导电填充物和导电插入物与电介质基底共烧，以在体液侧和器件侧之间形成通过电介质基片的气密密封和导电通路。
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33.发明申请LOW INDUCTANCE AND LOW RESISTANCE HERMETICALLY SEALED FILTERED FEEDTHROUGH FOR AN AIMD 审中-公开低电感和低电阻密封过滤用于AIMD公开(公告)号：US20140168917A1
公开(公告)日：2014-06-19
申请号：US14187295
申请日：2014-02-23
Applicant: GREATBATCH LTD.
Inventor： Thomas Marzano , Robert A. Stevenson , Christine A. Frysz , Jason Woods , Richard L. Brendel
CPC classification number: A61N1/08 , A61N1/086 , A61N1/3718 , A61N1/375 , A61N1/3754 , H01G2/02 , H01G2/10 , H01G4/40 , H01R13/5224 , H01R13/7195 , H01R2201/12 , H03H1/0007 , H03H7/1766 , H03H2001/0042 , H03H2001/0085
Abstract: A hermetically sealed filtered feedthrough includes a chip capacitor disposed on a circuit board on a device side. A first low impedance electrical connection is between a capacitor first end metallization and a conductor which is disposed through an insulator. A second low impedance electrical connection is between the capacitor second end metallization and a ferrule or housing. The second low impedance electrical connection may include an oxide-resistant electrical connection forming the hermetic seal between the insulator and the ferrule or housing and an electrical connection between and to the second end metallization and directly to the oxide-resistant electrical connection. Alternatively, the second low impedance electrical connection may include an oxide-resistant metal addition attached directly to the ferrule or housing and an electrical connection between and to the second end metallization and directly to the oxide-resistant metal addition.
Abstract translation: 密封的滤波馈通包括设置在器件侧的电路板上的片状电容器。 第一低阻抗电连接在电容器第一端金属化和通过绝缘体设置的导体之间。 第二低阻抗电连接在电容器第二端金属化和套圈或壳体之间。 第二低阻抗电连接可以包括形成绝缘体和套圈或外壳之间的气密密封的氧化物电阻连接以及与第二端金属化之间的电连接，并直接连接到耐氧化电连接。 或者，第二低阻抗电连接可以包括直接连接到套圈或外壳上的耐氧化金属添加剂，以及在第二端金属化之间和与第二端金属化部分之间的电连接，并直接与氧化物抵抗的金属添加物连接。
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34.发明申请RF FILTER FOR AN ACTIVE MEDICAL DEVICE (AMD) FOR HANDLING HIGH RF POWER INDUCED IN AN ASSOCIATED IMPLANTED LEAD FROM AN EXTERNAL RF FIELD 有权用于处理来自外部RF场的相关外延引线中感应的高RF功率的有源医疗设备（AMD）的射频滤波器公开(公告)号：US20140168850A1
公开(公告)日：2014-06-19
申请号：US14187297
申请日：2014-02-23
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Christine A. Frysz , Jason Woods , Richard L. Brendel , Robert S. Johnson , Dominick J. Frustaci , Warren S. Dabney , Keith W. Seitz , Thomas Marzano , John E. Roberts , William C. Thiebolt , Christopher M. Williams , Buehl E. Truex
IPC: H01G4/35
CPC classification number: A61N1/08 , A61N1/05 , A61N1/3718 , A61N1/3754 , H01G4/35 , H03H1/0007
Abstract: An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.
Abstract translation: 用于在选定的MRI频率或范围频率处理来自外部RF场的相关引线中感应的RF功率的用于主动医疗装置（AMD）的RF滤波器包括具有100至10,000皮法之间的电容的电容器，以及温度 介电常数为200以下，电容温度系数（TCC）在400〜71212ppm /摄氏度范围内的稳定电介质。 电容器的介电损耗角正切欧姆小于所选MRI射频频率或频率范围内电容器等效串联电阻（ESR）的百分之五。
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35.发明申请CO-FIRED HERMETICALLY SEALED FEEDTHROUGH WITH ALUMINA SUBSTRATE AND PLATINUM FILLED VIA FOR AN ACTIVE IMPLANTABLE MEDICAL DEVICE 有权通过用于活性可植入医疗装置填充的氧化铝基底和铂填充物进行密封公开(公告)号：US20140161973A1
公开(公告)日：2014-06-12
申请号：US14182569
申请日：2014-02-18
Applicant: Greatbatch Ltd.
Inventor： Xiaohong Tang , William C. Thiebolt , Christine A. Frysz , Keith W. Seitz , Robert A. Stevenson , Richard L. Brendel , Thomas Marzano , Jason Woods , Dominick J. Frustaci , Steven W. Winn
IPC: H01R43/00
CPC classification number: A61N1/3754 , A61N1/05 , A61N1/08 , A61N1/372 , A61N1/375 , B23K35/3013 , C22C29/12 , H01G2/103 , H01G4/005 , H01G4/12 , H01G4/30 , H01G4/35 , H01G4/40 , H01R43/00 , H02G3/22 , Y10T156/1052
Abstract: A co-fired hermetically sealed feedthrough is attachable to an active implantable medical device. The feedthrough comprises an alumina dielectric substrate comprising at least 96 or 99% alumina. A via hole is disposed through the alumina dielectric substrate from a body fluid side to a device side. A substantially closed pore, fritless and substantially pure platinum fill is disposed within the via hole forming a platinum filled via electrically conductive between the body fluid side and the device side. A hermetic seal is between the platinum fill and the alumina dielectric substrate, wherein the hermetic seal comprises a tortuous and mutually conformal interface between the alumina dielectric substrate and the platinum fill.
Abstract translation: 共同燃烧的密封馈通可附接到主动植入式医疗装置。 馈通包括包含至少96或99％的氧化铝的氧化铝介电衬底。 通孔穿过氧化铝电介质基板从体液侧设置到器件侧。 在通孔内设置基本封闭的无孔和基本上纯的铂填充物，其在体液侧和装置侧之间形成通过导电的铂填充通孔。 铂填充物和氧化铝电介质基底之间的气密密封，其中气密密封包括在氧化铝电介质基底和铂填充物之间的曲折且相互共形的界面。
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Patent Agency Ranking
36.发明授权Co-fired hermetically sealed feedthrough with alumina substrate and platinum filled via for an active implantable medical device 有权与氧化铝基底和铂填充通孔用于有源可植入医疗器械的共烧密封馈通公开(公告)号：US08653384B2
公开(公告)日：2014-02-18
申请号：US13743254
申请日：2013-01-16
Applicant: Greatbatch Ltd.
Inventor： Xiaohong Tang , William C. Thiebolt , Christine A. Frysz , Keith W. Seitz , Robert A. Stevenson , Ricahrd L. Brendel , Thomas Marzano , Jason Woods , Dominick J. Frustaci , Steven W. Winn
CPC classification number: A61N1/3754 , A61N1/05 , A61N1/08 , A61N1/372 , A61N1/375 , B23K35/3013 , C22C29/12 , H01G2/103 , H01G4/005 , H01G4/12 , H01G4/30 , H01G4/35 , H01G4/40 , H01R43/00 , H02G3/22 , Y10T156/1052
Abstract: A co-fired hermetically sealed feedthrough is attachable to an active implantable medical device. The feedthrough comprises an alumina dielectric substrate comprising at least 96 or 99% alumina. A via hole is disposed through the alumina dielectric substrate from a body fluid side to a device side. A substantially closed pore, fritless and substantially pure platinum fill is disposed within the via hole forming a platinum filled via electrically conductive between the body fluid side and the device side. A hermetic seal is between the platinum fill and the alumina dielectric substrate, wherein the hermetic seal comprises a tortuous and mutually conformal interface between the alumina dielectric substrate and the platinum fill.
Abstract translation: 共同燃烧的密封馈通可附接到主动植入式医疗装置。 馈通包括包含至少96或99％的氧化铝的氧化铝介电衬底。 通孔穿过氧化铝电介质基片从体液侧设置到器件侧。 在通孔内设置基本封闭的无孔和基本上纯的铂填充物，其在体液侧和装置侧之间形成通过导电的铂填充通孔。 铂填充物和氧化铝电介质基底之间的气密密封，其中气密密封包括在氧化铝电介质基底和铂填充物之间的曲折且相互共形的界面。
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公开(公告)号：US11185705B2
公开(公告)日：2021-11-30
申请号：US17077337
申请日：2020-10-22
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Keith W. Seitz , Jason Woods , Christine A. Frysz
Abstract: An enhanced RF switchable filtered feedthrough for real-time identification of the electrical and physical integrity of an implanted AIMD lead includes a DOUBLE POLE RF switch disposed on the device side. Additionally, the RF switchable filtered feedthrough can optionally include transient voltage suppressors (TVS) and an MRI mode. In an embodiment, a DOUBLE POLE RF switch selectively disconnects EMI filter capacitors so that an RF test/interrogation signal is sent from the AIMD down into an implanted lead(s). The reflected RF signal is then analyzed to assess implanted lead integrity including lead body anomalies, lead insulation defects, and/or lead conductor defects. The Double Pole switch is configured to be controlled by an AIMD control signal to switch between FIRST and SECOND THROW positions. In the FIRST THROW position a conductive leadwire hermetically sealed to and disposed through an insulator is electrically connected to a filter capacitor, which is then electrically connected to the ferrule of a hermetic feedthrough of an AIMD. In the FIRST THROW position, EMI energy imparted to a body fluid side implanted lead can be diverted to the housing of the AIMD. In the SECOND THROW position the conductive leadwire is electrically connected to an RF source disposed on the device side of the housing of the AIMD. While in the SECOND THROW position, a reflective return signal from the RF source is measured and analyzed to determine if the implanted AIMD lead exhibits any life-threatening performance issues, such as lead body anomalies, lead insulation defects or changes, or even defective, fractured or dislodged lead conductors. In another embodiment, a SINGLE POLE RF switch is configured to disconnect filter capacitors during the delivery of a high-voltage cardioversion shock from an implantable cardioverter defibrillator. Dis-connection of the filter capacitor either reduces or eliminates filter capacitor pulse inrush currents, which allows for the use of standard low-voltage filter capacitors instead of larger and more expensive high-voltage pulse rated filter capacitors. Dis-connection of the filter capacitor also allows for an RF interrogation pulse to be applied to the implanted lead in real-time (for example, pre-set intervals throughout the day).
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38.发明申请公开(公告)号：US20210205616A1
公开(公告)日：2021-07-08
申请号：US17181416
申请日：2021-02-22
Applicant: Greatbatch, Ltd.
Inventor： Christine A. Frysz , Robert A. Stevenson , Jason Woods
Abstract: A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an EMI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant sputter layer 165 is disposed on the device side surface of the hermetic seal ferrule over which an ECA stripe is provided. The ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyimides, or an electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free electrical attachment between the ECA stripe and the filter or AIMD circuits may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof.
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公开(公告)号：US10881867B2
公开(公告)日：2021-01-05
申请号：US16708881
申请日：2019-12-10
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Xiaohong Tang , William C. Thiebolt , Christine A. Frysz , Keith W. Seitz , Richard L. Brendel , Thomas Marzano , Jason Woods , Dominick J. Frustaci , Steven W. Winn
Abstract: A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule.
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40.发明授权公开(公告)号：US10589107B2
公开(公告)日：2020-03-17
申请号：US16291356
申请日：2019-03-04
Applicant: Greatbatch Ltd.
Inventor： Keith W. Seitz , Thomas Marzano , Robert A. Stevenson , Christine A. Frysz , Jason Woods , Richard L. Brendel , Marc Gregory Martino
Abstract: A feedthrough separates a body fluid side from a device side. A passageway is disposed through the feedthrough. A body fluid side leadwire extends from a first end disposed inside the passageway to a second end on the body fluid side. A device side leadwire extends from a first end disposed inside the passageway to a second end on the device side. The body fluid side leadwire is hermetically sealed to the feedthrough body and is not of the same material as the device side leadwire. A circuit board has an active via hole with a second end of the second leadwire residing therein. The circuit board has an active circuit trace that is electrically connectable to electronic circuits housed in an AIMD, and a circuit board ground metallization. An active electrical path extends from the first leadwire to the second leadwire to an MLCC chip capacitor mounted on the circuit board and to the circuit board active circuit trace, and a ground electrical path extends from the MLCC chip capacitor to the circuit board ground metallization and then to the ferrule.
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