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Patent Agency Ranking
1.发明申请RF FILTER FOR AN ACTIVE MEDICAL DEVICE (AMD) FOR HANDLING HIGH RF POWER INDUCED IN AN ASSOCIATED IMPLANTED LEAD FROM AN EXTERNAL RF FIELD 有权用于处理来自外部RF场的相关外延引线中感应的高RF功率的有源医疗设备（AMD）的射频滤波器公开(公告)号：US20140168850A1
公开(公告)日：2014-06-19
申请号：US14187297
申请日：2014-02-23
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Christine A. Frysz , Jason Woods , Richard L. Brendel , Robert S. Johnson , Dominick J. Frustaci , Warren S. Dabney , Keith W. Seitz , Thomas Marzano , John E. Roberts , William C. Thiebolt , Christopher M. Williams , Buehl E. Truex
IPC: H01G4/35
CPC classification number: A61N1/08 , A61N1/05 , A61N1/3718 , A61N1/3754 , H01G4/35 , H03H1/0007
Abstract: An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.
Abstract translation: 用于在选定的MRI频率或范围频率处理来自外部RF场的相关引线中感应的RF功率的用于主动医疗装置（AMD）的RF滤波器包括具有100至10,000皮法之间的电容的电容器，以及温度 介电常数为200以下，电容温度系数（TCC）在400〜71212ppm /摄氏度范围内的稳定电介质。 电容器的介电损耗角正切欧姆小于所选MRI射频频率或频率范围内电容器等效串联电阻（ESR）的百分之五。
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2.发明授权RF filter for an active medical device (AMD) for handling high RF power induced in an associated implanted lead from an external RF field 有权用于处理来自外部RF场的相关植入引线中感应的高RF功率的有源医疗器件（AMD）的RF滤波器公开(公告)号：US09014808B2
公开(公告)日：2015-04-21
申请号：US14187297
申请日：2014-02-23
Applicant: Greatbatch Ltd.
Inventor： Robert A. Stevenson , Christine A. Frysz , Jason Woods , Richard L. Brendel , Robert S. Johnson , Dominick J. Frustaci , Warren S. Dabney , Keith W. Seitz , Thomas Marzano , John E. Roberts , William C. Thiebolt , Christopher M. Williams , Buehl E. Truex
CPC classification number: A61N1/08 , A61N1/05 , A61N1/3718 , A61N1/3754 , H01G4/35 , H03H1/0007
Abstract: An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.
Abstract translation: 用于在选定的MRI频率或范围频率处理来自外部RF场的相关引线中感应的RF功率的用于主动医疗装置（AMD）的RF滤波器包括具有100至10,000皮法之间的电容的电容器，以及温度 介电常数为200以下，电容温度系数（TCC）在400〜71212ppm /摄氏度范围内的稳定电介质。 电容器的介电损耗角正切欧姆小于所选MRI射频频率或频率范围内电容器等效串联电阻（ESR）的百分之五。
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公开(公告)号：US20140194964A1
公开(公告)日：2014-07-10
申请号：US14202653
申请日：2014-03-10
Applicant: GREATBATCH LTD.
Inventor： Jason Woods , Richard L. Brendel , Robert A. Stevenson , Christopher M. Williams , Robert Naugler , Christine A. Frysz
IPC: A61N1/08
CPC classification number: A61N1/3754 , H01G2/02 , H01G4/228 , H01G4/35 , H01G4/40 , H01R13/7195 , H03H1/0007 , H03H7/1766 , H03H2001/0042 , H03H2001/0085
Abstract: A hermetically sealed filtered feedthrough assembly for an AIMD includes an insulator hermetically sealed to a conductive ferrule or housing. A conductor is hermetically sealed and disposed through the insulator in non-conductive relation to the conductive ferrule or housing between a body fluid side and a device side. A feedthrough capacitor is disposed on the device side. A first low impedance electrical connection is between a first end metallization of the capacitor and the conductor. A second low impedance electrical connection is between a second end metallization of the capacitor and the ferrule or housing. The second low impedance electrical connection includes an oxide-resistant metal addition attached directly to the ferrule or housing and an electrical connection coupling the second end metallization electrically and physically directly to the oxide-resistant metal addition.
Abstract translation: 用于AIMD的气密密封的过滤馈通组件包括密封到导电套圈或壳体的绝缘体。 导体被气密地密封并且通过绝缘体以非导电关系设置在导体套管或壳体之间，在体液侧和器件侧之间。 馈通电容器设置在器件侧。 第一低阻抗电连接在电容器的第一端金属化和导体之间。 第二低阻抗电连接在电容器的第二端金属化和套圈或壳体之间。 第二低阻抗电连接包括直接连接到套圈或壳体的耐氧化金属添加剂和将第二端金属化物电和物理直接耦合到耐氧化金属添加物的电连接。
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4.发明授权Capacitor for an active implantable medical device (AIMD) for handling high RF power induced in an implanted lead from an external RF field 有权用于处理来自外部RF场的植入引线中感应的高RF功率的有源植入式医疗设备（AIMD）的电容器公开(公告)号：US08855768B1
公开(公告)日：2014-10-07
申请号：US14088849
申请日：2013-11-25
Applicant: Greatbatch Ltd.
Inventor： Robert Shawn Johnson , Dominick J. Frustaci , Warren S. Dabney , Robert A. Stevenson , Keith W. Seitz , Christine A. Frysz , Thomas Marzano , Richard L. Brendel , John E. Roberts , William Thiebolt , Christopher M. Williams , Jason Woods , Buehl E. Truex
CPC classification number: A61N1/08 , A61N1/05 , A61N1/3718 , A61N1/3754 , H01G4/35 , H03H1/0007
Abstract: An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.
Abstract translation: 用于在选定的MRI频率或范围频率处理来自外部RF场的相关引线中感应的RF功率的用于主动医疗装置（AMD）的RF滤波器包括具有100至10,000皮法之间的电容的电容器，以及温度 介电常数为200以下，电容温度系数（TCC）在400〜71212ppm /摄氏度范围内的稳定电介质。 电容器的介电损耗角正切欧姆小于所选MRI射频频率或频率范围内电容器等效串联电阻（ESR）的百分之五。
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公开(公告)号：US09108066B2
公开(公告)日：2015-08-18
申请号：US14202653
申请日：2014-03-10
Applicant: Greatbatch Ltd.
Inventor： Jason Woods , Richard L. Brendel , Robert A. Stevenson , Christopher M. Williams , Robert Naugler , Christine A. Frysz
IPC: A61N1/00 , A61N1/375 , H01G4/40 , H01R13/7195 , H03H1/00 , H01G4/35 , H01G2/02 , H01G4/228 , H03H7/01
CPC classification number: A61N1/3754 , H01G2/02 , H01G4/228 , H01G4/35 , H01G4/40 , H01R13/7195 , H03H1/0007 , H03H7/1766 , H03H2001/0042 , H03H2001/0085
Abstract: A hermetically sealed filtered feedthrough assembly for an AIMD includes an insulator hermetically sealed to a conductive ferrule or housing. A conductor is hermetically sealed and disposed through the insulator in non-conductive relation to the conductive ferrule or housing between a body fluid side and a device side. A feedthrough capacitor is disposed on the device side. A first low impedance electrical connection is between a first end metallization of the capacitor and the conductor. A second low impedance electrical connection is between a second end metallization of the capacitor and the ferrule or housing. The second low impedance electrical connection includes an oxide-resistant metal addition attached directly to the ferrule or housing and an electrical connection coupling the second end metallization electrically and physically directly to the oxide-resistant metal addition.
Abstract translation: 用于AIMD的气密密封的过滤馈通组件包括密封到导电套圈或壳体的绝缘体。 导体被气密地密封并且通过绝缘体以非导电关系设置在导体套管或壳体之间，在体液侧和器件侧之间。 馈通电容器设置在器件侧。 第一低阻抗电连接在电容器的第一端金属化和导体之间。 第二低阻抗电连接在电容器的第二端金属化和套圈或壳体之间。 第二低阻抗电连接包括直接连接到套圈或壳体的耐氧化金属添加剂和将第二端金属化物电和物理直接耦合到耐氧化金属添加物的电连接。
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