中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

94 records (took 0.02 seconds)

    SILICON-BASED LENS SUPPORT STRUCTURE FOR DIODE LASER
    31.
    发明申请
    SILICON-BASED LENS SUPPORT STRUCTURE FOR DIODE LASER 有权
    用于二极管激光器的硅基镜片支持结构

    公开(公告)号：US20100046569A1

    公开(公告)日：2010-02-25

    申请号：US12546287

    申请日：2009-08-24

    Applicant: Gerald Ho Kim

    Inventor： Gerald Ho Kim

    IPC: H01S5/40 ,  H01L33/00 ,  H01S5/00

    CPC classification number: H01S5/02252 ,  H01S5/02288 ,  H01S5/4031

    Abstract: An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support plate has a first primary surface and a second primary surface opposite the first primary surface. The first fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The first fin structure is physically coupled to the support plate with the first edge of the first fin structure attached to the first primary surface of the support plate. The second fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The second fin structure is physically coupled to the support plate with the first edge of the second fin structure attached to the first primary surface of the support plate. The first diode laser is physically coupled between the first and the second fin structures to emit the first laser beam in a direction away from the support plate.

    Abstract translation: 提供一种包括第一二极管激光器和硅基支撑结构的装置。 第一二极管激光器被配置为在通电时发射第一激光束。 支撑结构包括硅基支撑板，硅基第一翅片结构和硅基第二鳍结构。 支撑板具有与第一主表面相对的第一主表面和第二主表面。 第一翅片结构具有第一主表面，与第一主表面相对的第二主表面，以及在第一和第二主表面之间的多个边缘包括第一边缘和与第一边缘相对的第二边缘。 第一翅片结构物理耦合到支撑板，第一翅片结构的第一边缘附接到支撑板的第一主表面。 第二鳍片结构具有第一主表面，与第一主表面相对的第二主表面，以及在第一和第二主表面之间的多个边缘包括第一边缘和与第一边缘相对的第二边缘。 第二翅片结构物理耦合到支撑板，第二鳍片结构的第一边缘附接到支撑板的第一主表面。 第一二极管激光器物理耦合在第一和第二鳍结构之间以沿远离支撑板的方向发射第一激光束。

    Thermal and electrical interface for flip-chip devices
    32.
    发明授权
    Thermal and electrical interface for flip-chip devices 有权

    公开(公告)号：US12033932B2

    公开(公告)日：2024-07-09

    申请号：US17374185

    申请日：2021-07-13

    Applicant: Gerald Ho Kim

    Inventor： Gerald Ho Kim

    IPC: H01L23/498 ,  H01L23/367

    CPC classification number: H01L23/49838 ,  H01L23/367

    Abstract: An interface device includes a double-trench structure configured to bond to a flip-chip device electrically and thermally. The double-trench structure is at least partially metalized and configured to allow a soldering material to flow along each of at least two trenches of the double-trench structure. The two trenches are closely located adjacent to each other to minimize an electrical separation gap between a cathode and an anode of the flip-chip device while providing electrical isolation therebetween.

    Portable Self-Contained Disinfection Device
    33.
    发明申请
    Portable Self-Contained Disinfection Device 有权

    公开(公告)号：US20210308288A1

    公开(公告)日：2021-10-07

    申请号：US17220143

    申请日：2021-04-01

    Applicant: Gerald Ho Kim

    Inventor： Gerald Ho Kim

    IPC: A61L2/00 ,  A61L2/10 ,  A61L9/20 ,  A61N5/06

    Abstract: A portable self-contained disinfection device includes an enclosure and one or more ultraviolet C (UVC) light-emitting diode (LED) illuminators. The enclosure is configured to at least partially surround at least a portion of a user. The one or more UVC LED illuminators are disposed on the enclosure and configured to emit a UVC light toward the portion of the user surrounded by the enclosure.

    Silicon-based heat dissipation device for heat-generating devices
    34.
    发明授权
    Silicon-based heat dissipation device for heat-generating devices 有权

    公开(公告)号：US10177065B2

    公开(公告)日：2019-01-08

    申请号：US15678921

    申请日：2017-08-16

    Applicant: Gerald Ho Kim

    Inventor： Gerald Ho Kim

    IPC: H01L23/367 ,  F28F3/04 ,  H05K1/02 ,  H01L23/373 ,  H05K7/20 ,  H01L23/40 ,  H01S5/02 ,  H01S5/024

    Abstract: Embodiments of a silicon-based heat dissipation device and a chip module assembly are described. An apparatus includes a chip module assembly that includes a silicon-based heat dissipation device and an extended device coupled to the silicon-based heat dissipation device. The silicon-based heat dissipation device includes a base portion having a first primary side and a second primary side opposite the first primary side. The silicon-based heat dissipation device also includes a protrusion portion on the first primary side of the base portion and protruding therefrom, with the protrusion portion having a plurality of fins. The extended device includes an extended layer. The second primary side of the base portion is configured to receive one or more heat-generating devices thereon such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

    Composite heat sink device for cooling of multiple heat sources in close proximity
    38.
    发明授权
    Composite heat sink device for cooling of multiple heat sources in close proximity 有权

    公开(公告)号：US09980363B2

    公开(公告)日：2018-05-22

    申请号：US15209044

    申请日：2016-07-13

    Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

    Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

    IPC: H05K7/20 ,  H05K1/02 ,  H05K1/18 ,  H05K1/03 ,  H05K3/00

    CPC classification number: H05K1/0203 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/185 ,  H05K3/0061 ,  H05K7/2039

    Abstract: In one aspect, an apparatus comprises a substrate, a first electrically-driven device disposed on the substrate, a second electrically-driven device disposed on the substrate, and a composite heat sink device. The composite heat sink device comprises a first thermal conduction member, a second thermal conduction member, and a thermal insulation member. The first thermal conduction member is disposed on the first electrically-driven device such that at least a portion of the heat generated by the first electrically-driven device is transferred to the first thermal conduction member by conduction. The second thermal conduction member is disposed on the second electrically-driven device such that at least a portion of the heat generated by the second electrically-driven device is transferred to the second thermal conduction member by conduction. The thermal insulation member is disposed between and thermally decouples the first thermal conduction member and the second thermal conduction member from one another.

Patent Agency Ranking