Semiconductor Device for Detecting Fluorescent Particles

    公开(公告)号:US20170082544A1

    公开(公告)日:2017-03-23

    申请号:US15312116

    申请日:2015-05-22

    Applicant: IMEC VZW

    Abstract: The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.

    Integrated Waveguide Structure for Fluorescence Analysis
    36.
    发明申请
    Integrated Waveguide Structure for Fluorescence Analysis 有权
    用于荧光分析的集成波导结构

    公开(公告)号:US20170003227A1

    公开(公告)日:2017-01-05

    申请号:US15113122

    申请日:2015-01-23

    Applicant: IMEC VZW

    Abstract: The present disclosure relates to structures, systems, and methods for characterizing one or more fluorescent particles. At least one embodiment relates to an integrated waveguide structure. The integrated waveguide structure includes a substrate. The integrated waveguide structure also includes a waveguide layer arranged on top of the substrate. The waveguide layer includes one or more excitation waveguides, one or more emission waveguides, and a particle radiation coupler, which includes a resonator element. In addition, the integrated waveguide structure includes one or more sensing sites configured with respect to the one or more excitation waveguides and the one or more emission waveguides such that a fluorescent particle at one of the sensing sites is activated by an excitation radiation transmitted via the one or more excitation waveguides and radiation emitted by the fluorescent particle is coupled into at least one of the emission waveguides by the particle radiation coupler.

    Abstract translation: 本公开涉及用于表征一种或多种荧光颗粒的结构,系统和方法。 至少一个实施例涉及一种集成波导结构。 集成波导结构包括基板。 集成波导结构还包括布置在基板顶部上的波导层。 波导层包括一个或多个激发波导,一个或多个发射波导和包括谐振元件的粒子辐射耦合器。 此外,集成波导结构包括相对于一个或多个激励波导和一个或多个发射波导配置的一个或多个感测位置,使得感测位置之一处的荧光颗粒被激发通过经由 一个或多个激发波导和由荧光颗粒发射的辐射通过粒子辐射耦合器耦合到至少一个发射波导中。

    Integrated Fluorescence Detection
    37.
    发明申请
    Integrated Fluorescence Detection 有权
    综合荧光检测

    公开(公告)号:US20150168392A1

    公开(公告)日:2015-06-18

    申请号:US14570675

    申请日:2014-12-15

    Abstract: An integrated fluorescence detector for detecting fluorescent particles is described. An example integrated fluorescence detector comprises a substrate, the substrate comprising an integrated detection element for detecting fluorescence radiation from fluorescent particles upon excitation of the particles with incident excitation radiation. The integrated fluorescence detector also comprises a sensing layer adapted for accommodating fluorescent particles to be sensed. The integrated fluorescence detector further comprises a photonics crystal layer arranged in between the sensing layer and the substrate, the photonics crystal layer comprising an absorption material designed such that the photonics crystal layer is configured for diffracting incident excitation radiation into a lateral direction in which the photonics crystal layer extends for incident excitation radiation having a wavelength within at least 10 nm of the predetermined excitation wavelength.

    Abstract translation: 描述了用于检测荧光颗粒的集成荧光检测器。 示例性的集成荧光检测器包括衬底,该衬底包括用于在用入射激发辐射激发颗粒时检测来自荧光颗粒的荧光辐射的集成检测元件。 集成荧光检测器还包括适于容纳要感测的荧光颗粒的感测层。 集成荧光检测器还包括布置在感测层和衬底之间的光子晶体层,光子晶体层包括设计成使得光子晶体层被配置为将入射激发辐射衍射到横向方向的吸收材料,其中光子 晶体层对于具有在预定激发波长的至少10nm内的波长的入射激发辐射延伸。

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