公开(公告)号：US11367775B1

公开(公告)日：2022-06-21

申请号：US17128745

申请日：2020-12-21

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66 ,  H01L29/47

Abstract: A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

公开(公告)号：US20190341447A1

公开(公告)日：2019-11-07

申请号：US16404284

申请日：2019-05-06

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.