公开(公告)号：US20240096988A1

公开(公告)日：2024-03-21

申请号：US18139060

申请日：2023-04-25

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt

IPC: H01L29/423 ,  H01L21/04 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L21/046 ,  H01L29/0865 ,  H01L29/1608 ,  H01L29/66803 ,  H01L29/7856 ,  H01L29/41791

Abstract: A semiconductor device includes a transistor. The transistor includes gate trenches formed in a semiconductor substrate, extending in a first horizontal direction and patterning the semiconductor substrate into ridges. The ridges are arranged between two adjacent gate trenches, respectively. The transistor further includes a gate electrode arranged in at least one of the gate trenches, a source region of a first conductivity type, a channel region, and a drift region of the first conductivity type. The source region, channel region and a part of the drift region are arranged in the ridges. The gate electrode is insulated from the channel region and the drift region. The channel region includes a doped portion of a second conductivity type. A doping concentration of the doped portion decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.

公开(公告)号：US20240072122A1

公开(公告)日：2024-02-29

申请号：US18364519

申请日：2023-08-03

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz ,  Bernd Zippelius ,  Dethard Peters

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7813

Abstract: A semiconductor device includes a transistor including transistor cells. Each transistor cells has a gate electrode arranged in gate trenches formed in a first portion of a silicon carbide substrate and extending in a first horizontal direction, a source region, a channel region, and a current-spreading region. The source region, channel region, and at least part of the current-spreading region are arranged in ridges patterned by the gate trenches. The transistor cells further include a body contact portion of the second conductivity type arranged in a second portion of the silicon carbide substrate and electrically connected to the channel region. The transistor cells further include a shielding region of the second conductivity type. A first portion of the shielding region is arranged below the gate trenches, respectively, and a second portion of the shielding region is arranged adjacent to a sidewall of the gate trenches, respectively.

公开(公告)号：US11908694B2

公开(公告)日：2024-02-20

申请号：US17127309

申请日：2020-12-18

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Hell ,  Caspar Leendertz ,  Kristijan Luka Mletschnig ,  Hans-Joachim Schulze

IPC: H01J37/317 ,  H01L21/265 ,  H01L21/04 ,  H01L29/36

CPC classification number: H01L21/26586 ,  H01J37/3171 ,  H01L21/046 ,  H01L21/047 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/36 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US11101343B2

公开(公告)日：2021-08-24

申请号：US16404284

申请日：2019-05-06

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

公开(公告)号：US20230006038A1

公开(公告)日：2023-01-05

申请号：US17846638

申请日：2022-06-22

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Dethard Peters

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

Abstract: A method for forming a drift region of a superjunction device includes forming a drift region section having a semiconductor layer with first regions of a first doping type and second regions of a second doping type arranged alternatingly in a first lateral direction. Forming the drift region section includes: forming an implantation mask on top of a first surface of the semiconductor layer and including first openings; in a first implantation process, implanting dopant atoms of the first doping type through the first openings into the first surface; increasing a size of the first openings to obtain second openings; in a second implantation process, implanting dopant atoms of the second doping type through the second openings into the first surface; and after removing the mask, in a third implantation process, implanting dopant atoms of the first doping type into the first surface.

公开(公告)号：US20210343835A1

公开(公告)日：2021-11-04

申请号：US17375034

申请日：2021-07-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

公开(公告)号：US20210091184A1

公开(公告)日：2021-03-25

申请号：US17031358

申请日：2020-09-24

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Thomas Ganner ,  Caspar Leendertz

IPC: H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

公开(公告)号：US10957768B1

公开(公告)日：2021-03-23

申请号：US16595375

申请日：2019-10-07

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz ,  Dethard Peters

IPC: H01L29/66 ,  H01L29/167 ,  H01L29/78 ,  H01L29/16

Abstract: A SiC substrate of a semiconductor device includes: a drift region of a first conductivity type; a body region of a second conductivity type having a channel region which adjoins a first surface of the SiC substrate; a source region of the first conductivity type adjoining a first end of the channel region; an extension region of the first conductivity type at an opposite side of the body region as the source region and vertically extending to the drift region; a buried region of the second conductivity type below the body region and having a tail which extends toward the first surface and adjoins the extension region; and a compensation region of the first conductivity type protruding from the extension region into the body region along the first surface and terminating at a second end of the channel region opposite the first end.

公开(公告)号：US12119377B2

公开(公告)日：2024-10-15

申请号：US17505716

申请日：2021-10-20

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872

CPC classification number: H01L29/0634 ,  H01L21/0465 ,  H01L21/049 ,  H01L21/0495 ,  H01L21/7602 ,  H01L21/761 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/872

Abstract: A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

公开(公告)号：US11888032B2

公开(公告)日：2024-01-30

申请号：US18073860

申请日：2022-12-02

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7813

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.