公开(公告)号：US11557579B2

公开(公告)日：2023-01-17

申请号：US17129269

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Chong Zhang ,  Cheng Xu ,  Junnan Zhao ,  Ying Wang ,  Meizi Jiao

IPC: H01L23/48 ,  H01L25/16 ,  H01L23/538 ,  H01L49/02 ,  H01L23/498 ,  H01L21/56 ,  H01L23/528

Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

公开(公告)号：US11502017B2

公开(公告)日：2022-11-15

申请号：US16215237

申请日：2018-12-10

Applicant: INTEL CORPORATION

Inventor： Cheng Xu ,  Zhimin Wan ,  Lingtao Liu ,  Yikang Deng ,  Junnan Zhao ,  Chandra Mohan Jha ,  Kyu-oh Lee

IPC: H01L23/367 ,  H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

Abstract: An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.

公开(公告)号：US11495555B2

公开(公告)日：2022-11-08

申请号：US15921511

申请日：2018-03-14

Applicant: Intel Corporation

Inventor： Yikang Deng ,  Jonathan Rosch ,  Andrew Brown ,  Junnan Zhao

IPC: H01L23/64 ,  H01L23/498 ,  H01F27/40 ,  H01L21/48

Abstract: Techniques for fabricating a cored or coreless semiconductor package having one or more magnetic bilayer structures embedded therein are described. A magnetic bilayer structure includes a magnetic layer and a dielectric layer. For one technique, fabricating a cored or coreless semiconductor package includes: depositing a seed layer on a build-up layer; forming a raised pad structure and a trace on the seed layer; removing one or more uncovered portions of the seed layer to uncover top surfaces of one or more portions of the build-up layer; applying a magnetic bilayer structure on the raised pad structure, the trace, any unremoved portion of the seed layer, and the top surfaces of the one or more portions of the build-up layer, the magnetic bilayer structure comprises a magnetic layer and a dielectric layer; and forming a conductive structure on the raised pad structure. Other techniques are also described.

公开(公告)号：US11482471B2

公开(公告)日：2022-10-25

申请号：US16287728

申请日：2019-02-27

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Junnan Zhao ,  Zhimin Wan ,  Ying Wang ,  Yikang Deng ,  Chong Zhang ,  Jiwei Sun ,  Zhenguo Jiang ,  Kyu-Oh Lee

IPC: H01L23/46 ,  H01L23/467 ,  H05K1/18 ,  H05K1/02 ,  H05K3/32 ,  H01L23/473 ,  H01L23/66 ,  H01L23/31

Abstract: An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

公开(公告)号：US11417614B2

公开(公告)日：2022-08-16

申请号：US15938114

申请日：2018-03-28

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Kyu-Oh Lee ,  Junnan Zhao ,  Rahul Jain ,  Ji Yong Park ,  Sai Vadlamani ,  Seo Young Kim

IPC: H01L23/64 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: Embodiments include an electronic package that includes a first layer that comprises a dielectric material and a second layer over the first layer, where the second layer comprises a magnetic material. In an embodiment, a third layer is formed over the second layer, where the third layer comprises a dielectric material. In an embodiment, the third layer entirely covers a first surface of the second layer. In an embodiment a first conductive layer and a second conductive layer are embedded within the second layer. In an embodiment, sidewalls of the first conductive layer and the second conductive layer are substantially vertical.

公开(公告)号：US11387224B2

公开(公告)日：2022-07-12

申请号：US16158186

申请日：2018-10-11

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Zhimin Wan ,  Yikang Deng ,  Junnan Zhao ,  Chong Zhang ,  Chandra Mohan M Jha ,  Ying Wang ,  Kyu-oh Lee

IPC: H01L23/34 ,  H01L25/18 ,  H01L23/00 ,  H01L23/538 ,  F28D20/02

Abstract: A semiconductor device package structure is provided. The semiconductor device package structure includes a substrate having a cavity, and phase change material within the cavity. In an example, the phase change material has a phase change temperature lower than 120 degree centigrade. A die may be coupled to the substrate. In an example, the semiconductor device package structure includes one or more interconnect structures that are to couple the die to the phase change material within the cavity.

公开(公告)号：US11217534B2

公开(公告)日：2022-01-04

申请号：US16646932

申请日：2017-12-30

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Junnan Zhao ,  Ji Yong Park ,  Kyu Oh Lee

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498

Abstract: Techniques of protecting cored or coreless semiconductor packages having materials formed from dissimilar metals from galvanic corrosion are described. An exemplary semiconductor package comprises one or more build-up layers; first and second semiconductor components (e.g., die, EMIB, etc.) on or embedded in the one or more build-up layers. The first semiconductor component may be electrically coupled to the second semiconductor component via a contact pad and an interconnect structure that are formed in the one or more build-up layers. The contact pad can comprise a contact region, a non-contact region, and a gap region that separates the contact region from the non-contact region. Coupling of the contact pad and an interconnect structure is performed by coupling only the contact region with the interconnect structure. Also, a surface area of the contact region can be designed to substantially equal to a surface area of the interconnect structure.

公开(公告)号：US11031360B2

公开(公告)日：2021-06-08

申请号：US16990782

申请日：2020-08-11

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Yikang Deng ,  Kyu Oh Lee ,  Ji Yong Park ,  Srinivas Pietambaram ,  Ying Wang ,  Chong Zhang ,  Rui Zhang ,  Junnan Zhao

IPC: H01L23/64 ,  H05K1/16 ,  H01L23/522 ,  H01L23/528 ,  H01F27/24 ,  H01L27/04 ,  H01F27/28 ,  H01L21/822

Abstract: Techniques are provided for an inductor at a second level interface between a first substrate and a second substrate. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first substrate, second conductive traces of a second non-semiconductor substrate, and a plurality of connectors configured to connect the first substrate with the second substrate. Each connector of the plurality of connectors can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

公开(公告)号：US10790159B2

公开(公告)日：2020-09-29

申请号：US15920881

申请日：2018-03-14

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Chong Zhang ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang

IPC: H01L21/48 ,  H01F27/28 ,  H01F41/24 ,  H01L21/67 ,  H01F17/00 ,  H01F41/04 ,  H01F17/06 ,  H05K1/16 ,  H05K3/00

Abstract: The systems and methods described herein provide for the fabrication of semiconductor package substrates having magnetic inductors formed in at least a portion of the through-holes formed in the semiconductor package substrate. Such magnetic inductors are formed without exposing the magnetic material disposed in the through-hole to any wet chemistry (desmear, electro-less plating, etc.) processes by sealing the magnetic material with a patterned sealant (e.g., patterned dry film resist) which seals the magnetic material prior to performing steps involving wet chemistry on the semiconductor package substrate. Such beneficially minimizes or even eliminates the contamination of wet chemistry reagents by the magnetic material should the magnetic material remain exposed during the wet chemistry processes. The patterned sealant is removed subsequent to the semiconductor package processing steps involving wet chemistry.

公开(公告)号：US20200211927A1

公开(公告)日：2020-07-02

申请号：US16233808

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Zhimin Wan ,  Cheng Xu ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang ,  Chong Zhang ,  Kyu Oh Lee ,  Chandra Mohan Jha ,  Chia-Pin Chiu

IPC: H01L23/473 ,  H01L21/48

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.