公开(公告)号：US09444042B2

公开(公告)日：2016-09-13

申请号：US14956291

申请日：2015-12-01

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Dale W. Collins ,  Scott E. Sills ,  Shuichiro Yasuda

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608

Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.

公开(公告)号：US20160093803A1

公开(公告)日：2016-03-31

申请号：US14956291

申请日：2015-12-01

Applicant: Micron Technology, Inc.

Inventor： Christopher W. Petz ,  Dale W. Collins ,  Scott E. Sills ,  Shuichiro Yasuda

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608

Abstract: Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells.

公开(公告)号：US20160056073A1

公开(公告)日：2016-02-25

申请号：US14930524

申请日：2015-11-02

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Joe Lindgren

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/768 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

Abstract translation: 一些实施例包括利用含铜材料的物理气相沉积同时保持沉积的含铜材料的温度在大于100℃的情况下沉积含铜材料的方法。一些实施例包括其中开口衬有金属的方法 含铜材料在含金属的组合物上物理气相沉积，同时含铜材料的温度不大于约0℃，然后使含铜材料退火，同时铜 - 含有材料的温度范围为约180℃至约250℃。一些实施方案包括其中开口衬有含有金属和氮的组合物的方法，并且衬里的开口至少部分地填充有铜 含材料。 一些实施方案包括在开口的侧壁周边具有金属氮化物衬垫的半导体结构，并且在开口内具有含铜材料并且直接抵靠金属氮化物衬垫。

公开(公告)号：US09006702B2

公开(公告)日：2015-04-14

申请号：US14158898

申请日：2014-01-20

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  D. V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Swapnil A. Lengade

IPC: H01L29/24 ,  H01L21/02 ,  H01G9/04

CPC classification number: H01L29/24 ,  H01G9/04 ,  H01L21/02565

Abstract: Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.

Abstract translation: 本文描述了包括氧化锆材料的半导体结构及其形成方法。 作为示例，半导体结构可以包括氧化锆材料，钙钛矿结构材料和形成在氧化锆材料和钙钛矿结构材料之间的贵金属材料。