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公开(公告)号:US10884480B1
公开(公告)日:2021-01-05
申请号:US16548699
申请日:2019-08-22
Applicant: Micron Technology, Inc.
Inventor: Jonathan S. Parry , Stephen L. Miller , Liang Yu
IPC: G11C5/14 , G06F1/3234 , G06F1/3225
Abstract: A technique to provide power management for multiple dice. The technique provides for determining for each respective die of the multiple dice, power consumption for operating each respective die; and generating a respective analog current from each respective die that corresponds to the power consumption of each respective die. The technique further provides for driving each respective analog current onto a common node that results in a cumulative analog current; and utilizing the cumulative analog current at the common node to indicate total power consumption of the dice.
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32.
公开(公告)号:US10818338B2
公开(公告)日:2020-10-27
申请号:US15930268
申请日:2020-05-12
Applicant: Micron Technology, Inc.
Inventor: George B. Raad , Jonathan S. Parry , James S. Rehmeyer , Timothy B. Cowles
Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
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33.
公开(公告)号:US20200234738A1
公开(公告)日:2020-07-23
申请号:US16834293
申请日:2020-03-30
Applicant: Micron Technology, Inc.
Inventor: Jonathan S. Parry , George B. Raad , James S. Rehmeyer , Timothy B. Cowles
Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.
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34.
公开(公告)号:US10541017B2
公开(公告)日:2020-01-21
申请号:US16543477
申请日:2019-08-16
Applicant: Micron Technology, Inc.
Inventor: George B. Raad , Jonathan S. Parry , James S. Rehmeyer , Timothy B. Cowles
IPC: G11C7/00 , G11C11/406
Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
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35.
公开(公告)号:US10446248B1
公开(公告)日:2019-10-15
申请号:US15959921
申请日:2018-04-23
Applicant: Micron Technology, Inc.
Inventor: Timothy B. Cowles , George B. Raad , James S. Rehmeyer , Jonathan S. Parry
Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as read-only memory by not implementing erase or write commands. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to compare an address of a received command to the one or more addresses, and at least in part based on the comparison, determine not to implement the received command. The circuitry can be further configured to return an error message after determining not to implement the received command.
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36.
公开(公告)号:US10297307B1
公开(公告)日:2019-05-21
申请号:US15870657
申请日:2018-01-12
Applicant: Micron Technology, Inc.
Inventor: George B. Raad , Jonathan S. Parry , James S. Rehmeyer , Timothy B. Cowles
IPC: G11C7/00 , G11C11/406
Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
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公开(公告)号:US20250117162A1
公开(公告)日:2025-04-10
申请号:US18771609
申请日:2024-07-12
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jonathan S. Parry
IPC: G06F3/06
Abstract: Methods, systems, and devices for techniques for staggering data burst events across channels are described. A memory system may offset data transfer events over multiple channels with a timing delay between data transfers over respective channels. For example, the memory system may initiate a first data transfer over a first channel at a first time and implement a timing delay before a second data transfer over a second channel at a second time such that the second time occurs after the first time. In some cases, the memory system may initiate one data transfer over each respective channel at a time, and in some cases, the memory system may initiate two or more data transfers over respective channels at a same time. In some cases, each channel may be associated with a respective timing delay.
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公开(公告)号:US12216915B2
公开(公告)日:2025-02-04
申请号:US17967265
申请日:2022-10-17
Applicant: Micron Technology, Inc.
Inventor: Animesh R. Chowdhury , Kishore K. Muchherla , Nicola Ciocchini , Akira Goda , Jung Sheng Hoei , Niccolo′ Righetti , Jonathan S. Parry
IPC: G06F3/06
Abstract: Apparatuses, systems, and methods for adapting a read disturb scan. One example method can include determining a delay between a first read command and a second read command, incrementing a read count based on the determined delay between the first read command and the second read command, and adapting a read disturb scan rate based on the incremented read count.
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公开(公告)号:US12204792B2
公开(公告)日:2025-01-21
申请号:US17396117
申请日:2021-08-06
Applicant: Micron Technology, Inc.
Inventor: Reshmi Basu , David Aaron Palmer , Jonathan S. Parry
Abstract: Methods, systems, and devices for adaptive throughput monitoring are described. In some examples, a memory system may be associated with one or more clocks that are each associated with a respective subcomponent. When the memory system receives a plurality of commands, the memory system may determine a throughput of the commands. Based on the determined throughput, the memory system may adjust a rate of one or more of the clocks.
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公开(公告)号:US12131788B2
公开(公告)日:2024-10-29
申请号:US17895886
申请日:2022-08-25
Applicant: Micron Technology, Inc.
Inventor: Nicola Ciocchini , Animesh R. Chowdhury , Kishore Kumar Muchherla , Akira Goda , Jung Sheng Hoei , Niccolo' Righetti , Jonathan S. Parry
CPC classification number: G11C16/3427 , G11C16/08 , G11C16/26
Abstract: Methods, systems, and apparatuses include receiving a read command including a logical address. The read command is directed to a portion of memory composed of blocks and each block is composed of wordline groups. The physical address for the read command is identified using the logical address. The wordline group is determined using the physical address. A slope factor is retrieved using the wordline group. A read counter is incremented using the slope factor.
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