Magnetic lens and electron beam deflection system
    31.
    发明授权
    Magnetic lens and electron beam deflection system 失效
    磁透镜和电子束偏转系统

    公开(公告)号:US4912405A

    公开(公告)日:1990-03-27

    申请号:US196776

    申请日:1988-05-17

    Inventor: Neil Richardson

    CPC classification number: H01J37/268 G01R31/305

    Abstract: A magnetic lens for use in an electron beam test probe system which includes an electron beam which travels along an electron beam column axis to reach the surface of a specimen which is to be examined. The magnetic lens focuses the electron beam to a selected point on the surface of the specimen. This magnetic lens also collects and collimates the secondary electrons produced in response to the electron beam bombardment of the specimen. The magnetic lens includes deflection coils for selecting the point on the specimen surface at which the electron beam is focused. The magnetic lens generates a magnetic field having a first region of intense magnetic flux substantially coincident with the selected point on the specimen surface and a second region of lesser uniform magnetic flux in which the magnetic flux lines are parallel to the electron beam column axis. This field is generated by the combination of a stationary magnetic field and a deflection magnetic field. The stationary magnetic field is modified by the deflection magnetic field which shifts the effective axis of the magnetic lens from the position of the electron beam column axis to a position which intersects the specimen at said selected point. The deflection magnetic field also results in the region of maximum magnetic flux being shifted to said point on the surface.

    Abstract translation: 一种用于电子束测试探针系统的磁性透镜,其包括沿着电子束柱轴线行进以到达要检查的样本表面的电子束。 磁性透镜将电子束聚焦到样品表面上的选定点。 该磁性透镜还收集并准直响应于样品的电子束轰击而产生的二次电子。 磁透镜包括用于选择电子束聚焦的样品表面上的点的偏转线圈。 磁性透镜产生磁场,其具有与试样表面上的选定点基本一致的强磁通的第一区域和磁通量平行于电子束柱轴线的较小均匀磁通量的第二区域。 该场由固定磁场和偏转磁场的组合产生。 固定磁场由偏转磁场改变,该偏转磁场将磁性透镜的有效轴从电子束列轴线的位置移动到与所选择的点处的样本相交的位置。 偏转磁场也导致最大磁通量的区域移动到表面上的所述点。

    Electron beam test probe system for analyzing integrated circuits
    32.
    发明授权
    Electron beam test probe system for analyzing integrated circuits 失效
    用于分析集成电路的电子束测试探针系统

    公开(公告)号:US4706019A

    公开(公告)日:1987-11-10

    申请号:US798592

    申请日:1985-11-15

    Inventor: Neil Richardson

    CPC classification number: G01R31/305

    Abstract: An electron beam test probe system for analyzing the operation of an integrated circuit is described. It includes a circuit for generating a test signal pattern and coupling the test signal pattern to the integrated circuit under test. It also includes an electron beam test probe for making potential measurements at specified points on the surface of the integrated circuit. These potential measurements can be displayed as an image of the surface of the integrated circuit or as a graph of the potential at a specified point on the surface of the integrated circuit as a function of time for times chosen with respect to the test signal pattern. The points at which potential measurements are made may be specified with reference to a schematic diagram of the integrated circuit. The schematic diagram may be inputted to the test probe system in a format which is consistent with that used by currently available circuit simulation programs. The points at which potential measurements are made may also be specified with reference to a specific location on the integrated circuit surface. The test probe system includes storage for a layout drawing of the surface of the integrated circuit in a format which is consisted with that used in currently available mask design programs.

    Abstract translation: 描述用于分析集成电路的操作的电子束测试探针系统。 它包括用于产生测试信号模式并将测试信号模式耦合到被测集成电路的电路。 它还包括一个电子束测试探头,用于在集成电路表面的特定点进行电位测量。 这些电位测量可以作为集成电路表面的图像显示,或者作为集成电路表面上指定点处的电位的曲线图,作为相对于测试信号图案选择的时间的时间的函数。 可以参考集成电路的示意图来指定进行电位测量的点。 原理图可以以与当前可用的电路仿真程序使用的格式一致的格式输入到测试探针系统。 可以参考集成电路表面上的特定位置来指定进行电位测量的点。 测试探针系统包括用于在当前可用的掩模设计程序中使用的格式的集成电路的表面的布局图的存储。

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