公开(公告)号：US20080299698A1

公开(公告)日：2008-12-04

申请号：US12175586

申请日：2008-07-18

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L31/00 ,  H01L21/30

CPC classification number: H01L31/105 ,  H01L27/1446 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.

Abstract translation: 光检测器包括具有彼此相对的第一和第二主表面的半导体衬底。 光电检测器包括形成在第一主表面中的至少一个沟槽和第一阳极/阴极区域，其具有靠近第一主表面和至少一个沟槽的侧壁附近形成的第一导电性。 光电检测器包括靠近第二主表面的第二阳极/阴极区域。 第二阳极/阴极区具有与第一导电性相反的第二导电性。 至少一个沟槽延伸到半导体衬底的第二主表面。

公开(公告)号：US07429772B2

公开(公告)日：2008-09-30

申请号：US11380457

申请日：2006-04-27

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC classification number: H01L21/78

Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

公开(公告)号：US20080143435A1

公开(公告)日：2008-06-19

申请号：US11883039

申请日：2006-01-25

Applicant: Robin Wilson ,  David Miles

Inventor： Robin Wilson ,  David Miles

IPC: H03D3/00 ,  H03K5/1532

CPC classification number: H03D1/18

Abstract: A demodulator for demodulating a modulated signal has a peak detector (206) with an input (100) coupled to receive the modulated signal and an output (207) to supply a peak detector output signal. The peak detector has a charge storer (314) coupled to the peak detector output so that the peak detector output signal is provided by a voltage across the charge storer (314) and a comparator (313) having a first comparator input coupled to the peak detector input to receive the modulated signal and a second comparator input coupled to the peak detector output to receive the peak detector output signal. The comparator (313) provides a comparison signal representing a comparison between the voltage of the modulated signal and the peak detector output signal. A charging controller (315, 316 and 318) charges the charge storer (314) so as to increase the output voltage when the comparator (313) provides a first signal indicating that the voltage of the modulated signal is higher than the voltage of the peak detector output signal and discharges the charge storer (314) so as to decrease the output voltage when the comparator (313) provides a second signal indicating that the voltage of the modulated signal is lower than the voltage of the peak detector output signal.

Abstract translation: 用于解调调制信号的解调器具有峰值检测器（206），其具有耦合以接收调制信号的输入（100）和输出（207）以提供峰值检测器输出信号。 峰值检测器具有耦合到峰值检测器输出的电荷存储器（314），使得峰值检测器输出信号由电荷存储器（314）两端的电压和比较器（313）提供，该比较器具有耦合到峰值的第一比较器输入端 检测器输入以接收调制信号，以及耦合到峰值检测器输出的第二比较器输入以接收峰值检测器输出信号。 比较器（313）提供表示调制信号的电压与峰值检测器输出信号之间的比较的比较信号。 当比较器（313）提供指示调制信号的电压高于峰值电压的第一信号时，充电控制器（315,316和318）对电荷存储器（314）充电，以增加输出电压 检测器输出信号，并且当比较器（313）提供指示调制信号的电压低于峰值检测器输出信号的电压的第二信号时，使电荷存储器（314）放电以便降低输出电压。

公开(公告)号：US20070085117A1

公开(公告)日：2007-04-19

申请号：US11548546

申请日：2006-10-11

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

IPC: H01L31/113

CPC classification number: H01L27/14683 ,  H01L27/1463

Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.

Abstract translation: 光电检测器阵列包括具有相对的第一和第二主表面的半导体衬底，靠近第一主表面的第一掺杂浓度的第一层和靠近第二主表面的第二掺杂浓度的第二层。 光电检测器包括形成在第一主表面中的至少一个导电通孔和靠近第一主表面和至少一个导电通孔的阳极/阴极区域。 通孔延伸到第二主表面。 导电通孔通过第一电介质材料与半导体衬底隔离。 阳极/阴极区域是与第一导电性相反的第二导电性。 光电检测器包括形成在第一主表面中并延伸穿过半导体衬底的第一层的至少第二层半导体衬底的第三掺杂浓度的掺杂隔离区。

公开(公告)号：US08503931B2

公开(公告)日：2013-08-06

申请号：US13534888

申请日：2012-06-27

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: H04B5/00

CPC classification number: G06K7/10237 ,  G06K19/0723

Abstract: An NFC-enabled device configured at least in part as an integrated circuit, the integrated circuit including a controller and a plurality of capacitors. The controller is operable to control one or more of the plurality of capacitors to vary an operating parameter of the NFC-enabled device.

Abstract translation: 至少部分地被配置为集成电路的NFC功能设备，所述集成电路包括控制器和多个电容器。 控制器可操作以控制多个电容器中的一个或多个以改变启用NFC的设备的操作参数。

公开(公告)号：US08489020B2

公开(公告)日：2013-07-16

申请号：US12532737

申请日：2008-03-20

Applicant: Joakim Bangs ,  Robin Wilson ,  Franz Fuchs

Inventor： Joakim Bangs ,  Robin Wilson ,  Franz Fuchs

IPC: H04B5/00 ,  H01Q21/00

CPC classification number: H04B5/0012 ,  G06K7/10237 ,  H04B5/0081

Abstract: An NFC communicator has an antenna circuit to enable inductive coupling, via an RF H field, of the NFC communicator and another near field RF communicator in near field range. The antenna circuit has an antenna element coupled in parallel with a first capacitor to form a parallel LC circuit. The antenna element has an antenna coil in series with a second capacitor to reduce the voltage to which circuitry of the NFC communicator is subjected by a received RF H field. Alternatively or additionally, receive circuitry of the NFC communicator may be coupled to only a proportion of the antenna coil to reduce the voltage to which circuitry of the NFC communicator is subjected by a received RF H field.

Abstract translation: NFC通信器具有天线电路，用于经由NFC通信器的RF H场和近场范围内的另一近场RF通信器进行电感耦合。 天线电路具有与第一电容器并联耦合以形成并联LC电路的天线元件。 天线元件具有与第二电容器串联的天线线圈，以减少NFC通信器的电路受到接收的RF H场的影响。 或者或另外，NFC通信器的接收电路可以仅耦合到天线线圈的一部分，以降低NFC通信器的电路受到接收的RF H场的影响。

公开(公告)号：US08294508B2

公开(公告)日：2012-10-23

申请号：US12986428

申请日：2011-01-07

Applicant: Robin Wilson ,  Sylvain Engels ,  Eric Balossier

Inventor： Robin Wilson ,  Sylvain Engels ,  Eric Balossier

IPC: H01L35/00

CPC classification number: G06F1/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device may include a controlled generator configured to generate an adjustable frequency clock signal at at least one part of an integrated circuit coupled to the output of the controller generator and including at least one transistor having a gate of less than forty-five nanometers in length. The electronic device may include determination circuitry configured to determine the temperature of the at least one part of the integrated circuit, and drive circuitry coupled to the determination circuitry and configured to control the generator to increase the frequency of the clock signal when the temperature increases.

Abstract translation: 电子设备可以包括受控发电机，其被配置为在耦合到控制器发生器的输出的集成电路的至少一部分上产生可调节频率时钟信号，并且包括至少一个具有小于四十五纳米的栅极的晶体管 长度。 电子设备可以包括确定电路，其被配置为确定集成电路的至少一部分的温度，以及耦合到确定电路并被配置为当温度升高时控制发电机来增加时钟信号的频率的驱动电路。

公开(公告)号：US08150321B2

公开(公告)日：2012-04-03

申请号：US12377627

申请日：2007-08-15

Applicant: Ian Winter ,  Alastair Lefley ,  Robin Wilson

Inventor： Ian Winter ,  Alastair Lefley ,  Robin Wilson

IPC: H04B5/00 ,  H04B7/00

CPC classification number: H04B5/02 ,  H04B5/0068

Abstract: A near field RF communicator has: an antenna operable to generate an RF signal to enable inductive coupling via the magnetic field of the RF signal between the antenna and another near field RF communicator or RF transponder in near field range; and a signal generator operable to generate a multi-level digital sine wave drive signal to drive the antenna to generate the RF signal, wherein the signal generator comprises a selector operable to select one or more digital sequences to provide one or more digital signals from which the digital sine wave drive signal is generated.

Abstract translation: 近场RF通信器具有：天线，其可操作以产生RF信号，以通过天线与近场范围内的另一近场RF通信器或RF应答器之间的RF信号的磁场实现电感耦合; 以及信号发生器，其可操作以产生多级数字正弦波驱动信号以驱动所述天线以产生所述RF信号，其中所述信号发生器包括选择器，所述选择器可操作以选择一个或多个数字序列以提供一个或多个数字信号， 产生数字正弦波驱动信号。

公开(公告)号：US08148203B2

公开(公告)日：2012-04-03

申请号：US13179170

申请日：2011-07-08

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L21/00

CPC classification number: H01L21/78

Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

Abstract translation: 绝缘体上半导体（SOI）晶片包括具有彼此相对的第一和第二主表面的半导体衬底。 电介质层设置在半导体衬底的第一主表面的至少一部分上。 器件层具有第一主表面和第二主表面。 器件层的第二主表面设置在与半导体衬底相对的电介质层的表面上。 在设备层的第一主表面上限定多个预期的管芯区域。 多个预期的模具区域彼此分离。 多个裸片存取沟槽从第二主表面形成在半导体衬底中。 多个管芯存取沟槽中的每一个通常设置在多个预期管芯区域中的至少一个相应的一个的下方。

公开(公告)号：US08058091B2

公开(公告)日：2011-11-15

申请号：US12175586

申请日：2008-07-18

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L31/00

CPC classification number: H01L31/105 ,  H01L27/1446 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.

Abstract translation: 光检测器包括具有彼此相对的第一和第二主表面的半导体衬底。 光电检测器包括形成在第一主表面中的至少一个沟槽和第一阳极/阴极区域，其具有靠近第一主表面和至少一个沟槽的侧壁附近形成的第一导电性。 光电检测器包括靠近第二主表面的第二阳极/阴极区域。 第二阳极/阴极区具有与第一导电性相反的第二导电性。 至少一个沟槽延伸到半导体衬底的第二主表面。