公开(公告)号：US11309373B2

公开(公告)日：2022-04-19

申请号：US16838931

申请日：2020-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Yong Su Lee ,  Myoung Geun Cha ,  Doo Na Kim ,  Sang Sub Kim ,  Jae Hwan Chu ,  Sang Gun Choi

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

公开(公告)号：US11195444B2

公开(公告)日：2021-12-07

申请号：US17038256

申请日：2020-09-30

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Hye Na Kwak ,  Doo Na Kim ,  Han Bit Kim ,  Bum Mo Sung ,  Do Kyeong Lee ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/20

Abstract: A display device includes: a pixel unit including a plurality of pixels; a scan driver having a plurality of stages and configured to supply a scan signal to the pixel unit; and a light emission control driver having a plurality of stages and configured to supply a light emission control signal to the pixel unit, wherein a first transistor of a plurality of transistors included in at least one of the stages of the scan driver or the stages of the light emission control driver comprises: an active layer pattern on a base layer, and including a channel region forming a channel, and first and second regions on opposite sides of the channel region; and a gate electrode spaced apart from the active layer pattern with a first insulating film therebetween, and overlapping the channel region.

公开(公告)号：US11164526B2

公开(公告)日：2021-11-02

申请号：US16811514

申请日：2020-03-06

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Mee Jae Kang ,  Han Bit Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Seob Lee

IPC: G09G3/3266 ,  G09G3/3291

Abstract: A display device including pixels is provided. Each of the pixels includes a first transistor having a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor having a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node, and a third transistor having a first gate electrode connected to the first scan line, a second gate electrode, a first electrode connected to the first node, and a second electrode connected to the third node. The second gate electrode may be in a floating state, and the third transistor may be aged to alleviate a leakage current in order to improve image generation.

公开(公告)号：US10755639B2

公开(公告)日：2020-08-25

申请号：US16381491

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yong Su Lee

IPC: G09G3/3233

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

公开(公告)号：US10658398B2

公开(公告)日：2020-05-19

申请号：US16036985

申请日：2018-07-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong Chan Lee ,  Woong Hee Jeong ,  Tae Hoon Yang ,  Yong Su Lee

IPC: H01L27/12

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

公开(公告)号：US09620609B2

公开(公告)日：2017-04-11

申请号：US14830091

申请日：2015-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L33/34

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

公开(公告)号：US12277902B2

公开(公告)日：2025-04-15

申请号：US17886995

申请日：2022-08-12

Applicant: Samsung Display Co., LTD.

Inventor： Seung Jun Lee ,  Yong Su Lee ,  Jae Woo Lee

IPC: G09G3/3233 ,  H10K59/121

Abstract: A display device is provided. A display device comprises a light emitting element disposed on a substrate, a driving transistor that provides a driving current to the light emitting element according to a voltage of a gate electrode, a first transistor supplying a data voltage to the gate electrode of the driving transistor, a first capacitor comprising a first capacitor electrode electrically connected to a first driving voltage line to which a first driving voltage is applied and a common capacitor electrode electrically connected to a first electrode of the first transistor, and a second capacitor comprising a second capacitor electrode electrically connected to the gate electrode of the driving transistor and the common capacitor electrode of the first capacitor, wherein the first capacitor electrode, the common capacitor electrode, and the second capacitor electrode overlap each other in a thickness direction of the substrate.

公开(公告)号：US12245475B2

公开(公告)日：2025-03-04

申请号：US17687702

申请日：2022-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Tae Wook Kang ,  Bum Mo Sung ,  Yun Jung Oh ,  Yong Su Lee

IPC: H01L21/40 ,  H10K50/814 ,  H10K50/824 ,  H10K59/122 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11856818B2

公开(公告)日：2023-12-26

申请号：US17572913

申请日：2022-01-11

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Woo Bae ,  So Young Koo ,  Han Bit Kim ,  Thanh Tien Nguyen ,  Kyoung Won Lee ,  Yong Su Lee ,  Jae Seob Lee ,  Gyoo Chul Jo

IPC: H10K59/121 ,  H10K50/844 ,  H10K59/126 ,  H10K59/131 ,  H01L29/786 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H10K50/844 ,  H10K59/126 ,  H10K59/1216 ,  H10K59/131 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.