公开(公告)号：US12295169B2

公开(公告)日：2025-05-06

申请号：US18607426

申请日：2024-03-16

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Bum Mo Sung

IPC: H10D86/01 ,  G09G3/3233 ,  H10K59/121

Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

公开(公告)号：US12075655B2

公开(公告)日：2024-08-27

申请号：US17151883

申请日：2021-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US10930725B2

公开(公告)日：2021-02-23

申请号：US16575643

申请日：2019-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US12015088B2

公开(公告)日：2024-06-18

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H10K59/12

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11011597B2

公开(公告)日：2021-05-18

申请号：US16842239

申请日：2020-04-07

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Sub Kim ,  Mee Jae Kang ,  Han Bit Kim ,  Yong Su Lee

IPC: H01L27/32 ,  H01L29/786 ,  G09G3/3266 ,  H01L29/66 ,  G09G3/3275

Abstract: A display device includes scan lines for scan signals, data lines for data voltages, and pixels connected to the scan and data lines, where each of the pixels includes a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode, the third transistor includes an active layer including a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region, and electrical resistance of the second region is greater than electrical resistance of the first region.

公开(公告)号：US11881487B2

公开(公告)日：2024-01-23

申请号：US17386854

申请日：2021-07-28

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit Kim ,  Mee Jae Kang ,  Keun Woo Kim ,  Doo-Na Kim ,  Sang Sub Kim ,  Do Kyeong Lee ,  Jae Hwan Chu

IPC: H01L27/12 ,  H01L27/15 ,  H10K59/121

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/156 ,  H10K59/1213

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

公开(公告)号：US11626429B2

公开(公告)日：2023-04-11

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub Kim ,  Keun Woo Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Myoung Geun Cha ,  Ki Seok Choi ,  Sang Gun Choi

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L21/225 ,  H01L21/28 ,  G09G3/32 ,  H01L21/265

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US11437455B2

公开(公告)日：2022-09-06

申请号：US16856780

申请日：2020-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.

公开(公告)号：US12302717B2

公开(公告)日：2025-05-13

申请号：US16857888

申请日：2020-04-24

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Sang Sub Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Hwan Chu

IPC: H10K59/131 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291

Abstract: A display device includes pixels at least one of which includes a light emitting element connected between a first power source and a second power source, a first transistor connected between the first power source and the light emitting element and controlling a driving current flowing through the light emitting element in response to a voltage of a first node, a switching transistor connected to the first node and including and active layer that includes first and second conductive regions spaced apart from each other, first and second channel regions disposed between the first and second conductive regions, and a common conductive region disposed between the first and second channel regions, and a conductive pattern overlapping the active layer to face the common conductive region.

公开(公告)号：US12256571B2

公开(公告)日：2025-03-18

申请号：US18405283

申请日：2024-01-05

Applicant: Samsung Display Co., LTD.

Inventor： Han Bit Kim ,  Mee Jae Kang ,  Keun Woo Kim ,  Doo-Na Kim ,  Sang Sub Kim ,  Do Kyeong Lee ,  Jae Hwan Chu

IPC: H01L27/12 ,  H01L27/15 ,  H10D86/40 ,  H10D86/60 ,  H10H29/14 ,  H10K59/121

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.