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    Memory device and method of transferring data in memory device
    34.
    发明授权
    Memory device and method of transferring data in memory device 有权
    存储器件和在存储器件中传送数据的方法

    公开(公告)号：US07242633B1

    公开(公告)日：2007-07-10

    申请号：US11044740

    申请日：2005-01-26

    Applicant: Alvin Y. Ching ,  Raymond C. Pang ,  Steven P. Young ,  Thanh Pham

    Inventor： Alvin Y. Ching ,  Raymond C. Pang ,  Steven P. Young ,  Thanh Pham

    IPC: G11C8/00

    CPC classification number: H03K19/1776 ,  G11C7/1075 ,  G11C8/10 ,  G11C8/16 ,  G11C11/412 ,  G11C11/413 ,  G11C15/00

    Abstract: According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.

    Abstract translation: 根据本发明的一个方面，公开了一种用于访问存储器中的数据的电路。 电路通常包括具有读逻辑电路的第一端口和从存储器产生数据的第一输出。 第二端口具有读逻辑电路和写逻辑电路。 第二输出耦合到第二端口，并且还从存储器产生数据。 公开了用于单独选择存储器的端口（例如随机存取存储器）的读取和写入宽度的电路。 最后，公开了在可编程逻辑器件中实现内容可寻址存储器的其它实施例。 此外，公开了一种访问存储器中的数据的方法。

    Sequential gas flow oxide deposition technique
    36.
    发明申请
    Sequential gas flow oxide deposition technique 失效
    顺序气流氧化沉积技术

    公开(公告)号：US20050019494A1

    公开(公告)日：2005-01-27

    申请号：US10627228

    申请日：2003-07-25

    Applicant: Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    Inventor： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507

    CPC classification number: C23C16/45542 ,  C23C16/402 ,  C23C16/507

    Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

    Abstract translation: 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

    In-situ liquid flow rate estimation and verification by sonic flow method
    37.
    发明授权
    In-situ liquid flow rate estimation and verification by sonic flow method 失效
    声流法原位液体流量估算与验证

    公开(公告)号：US5968588A

    公开(公告)日：1999-10-19

    申请号：US819674

    申请日：1997-03-17

    Applicant: Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    Inventor： Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    IPC: C23C16/448 ,  C23C16/52 ,  C23C16/00

    CPC classification number: C23C16/52 ,  C23C16/4481

    Abstract: An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.

    Abstract translation: 用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。 液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。 旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。 为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。 用压力表测量第一稳态压力。 液体前体蒸发并引导到载气流入旁通管线。 用压力表测量第二稳态压力。 基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。 校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

    Apparatus and method for controlling process chamber pressure
    38.
    发明授权
    Apparatus and method for controlling process chamber pressure 失效
    用于控制处理室压力的装置和方法

    公开(公告)号：US5871813A

    公开(公告)日：1999-02-16

    申请号：US812006

    申请日：1997-03-05

    Applicant: Thanh Pham

    Inventor： Thanh Pham

    IPC: B01J3/00 ,  B01J3/02 ,  C23C16/44 ,  C23C16/00

    CPC classification number: C23C16/4412 ,  B01J3/002 ,  B01J3/02

    Abstract: The present invention provides an apparatus and methods for controlling gas pressure within a semiconductor process chamber. The apparatus comprises a fluid conduit, and a throttle valve positioned downstream of the process chamber outlet for controlling gas flow therethrough. A filter is disposed between the inlet of the fluid conduit and the throttle valve for collecting gas particles flowing through the fluid conduit to inhibit gas deposition on the throttle valve. In addition, the filter functions as a flow restrictor to reduce the gas flow rate through the fluid conduit. This allows the throttle valve to operate in a more open position for a particular desired gas pressure, which usually reduces the amount of throttle valve surfaces exposed to gas passing therethrough. Accordingly, the amount of gas deposited on these surfaces is further reduced. This configuration minimizes any friction between valve surfaces, which increases the lifetime of the throttle valve and the throughput of the process.

    Abstract translation: 本发明提供一种用于控制半导体处理室内的气体压力的装置和方法。 该装置包括流体导管和位于处理室出口下游的节流阀，用于控制气体流过其中。 过滤器设置在流体导管的入口和节流阀之间，用于收集流过流体导管的气体颗粒，以阻止节流阀上的气体沉积。 此外，过滤器用作流量限制器以减少通过流体导管的气体流量。 这允许节流阀在特定所需气体压力的更开放位置操作，这通常减少暴露于通过其中的气体的节流阀表面的量。 因此，沉积在这些表面上的气体的量进一步减少。 这种构造使阀表面之间的任何摩擦力最小化，这增加了节流阀的寿命和过程的吞吐量。

    Robotic gripping device
    39.
    发明授权
    Robotic gripping device 失效
    机器人抓握装置

    公开(公告)号：US5628539A

    公开(公告)日：1997-05-13

    申请号：US510692

    申请日：1995-08-03

    Applicant: Ivan Muchalov ,  Thanh Pham

    Inventor： Ivan Muchalov ,  Thanh Pham

    IPC: B65G47/90 ,  B25J15/00

    CPC classification number: B65G47/90 ,  Y10S294/902

    Abstract: A robotic gripping device comprises a fixed frame, and a hold down plate vertically moveable in relation to the fixed frame between a raised release position and a lowered hold down position. A moveable support platform retained by the fixed frame is moveable between an extended position where the support platform is opposed to the hold down plate to permit the retention of packages therebetween, and a retracted position where the support platform is no longer opposed to the hold down plate. The support platform further comprises pairs of generally parallel side members, with roller members disposed between each pair of side members, and a belt member looped around the roller members. A package receiving portion of the belt member faces the hold down plate when the support platform is in its extended position. A securing member disposed between the fixed frame and a fixed end portion of each belt member, so as to thereby secure a fixed end portion of the package receiving portion of the belt member in horizontally stationary relation with respect to the hold down plate. Accordingly, the segment of the package receiving portion of the belt member remains horizontally stationary during horizontal movement of the support platform, thus allowing easy removal of the support platform from beneath a package. Further, the hold down plate has a plurality of dynamically activated ring-shaped entrapment members that help preclude undesired lateral movement of a package.

    Abstract translation: 机器人夹持装置包括固定框架和在升高的释放位置和降低的压下位置之间相对于固定框架可垂直移动的压紧板。 由固定框架保持的可移动支撑平台可以在支撑平台与压板相对的延伸位置之间移动，以允许在其间保持包装物，以及支撑平台不再与压紧件相对的缩回位置 盘子。 支撑平台还包括一对大体上平行的侧部构件，其中辊构件设置在每对侧构件之间，以及围绕辊构件环绕的带构件。 当支撑平台处于其延伸位置时，带构件的包装容纳部分面向压板。 固定构件设置在固定框架和每个带构件的固定端部之间，从而固定带构件的包装容纳部分的固定端部相对于压板水平地固定。 因此，在支撑平台的水平运动期间，带构件的包装容纳部分的段保持水平地固定，从而容易地从包装下方移除支撑平台。 此外，压紧板具有多个动态激活的环形捕获构件，其有助于防止包装件的不期望的横向移动。

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