Abstract:
In a telecommunications system, a subscriber station invokes a sponsored-call application service program when the subscriber station originates a call. Based upon certain criteria, service logic determines whether the call is sponsored or not. If sponsored, additional service logic utilizes the location of the call origination (i.e., location of the subscriber station) and/or other attributes of the subscriber station to select an announcement from a plurality of announcements for transmission to the subscriber station. After the announcement is transmitted (i.e., played), the subscriber station is connected to the call's desired destination. If not sponsored, the call is handled as a normal call.
Abstract:
A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.
Abstract:
An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
Abstract:
A projector includes a network interface card, a basic input output system, and a service set identifier module. The network interface card is configured to communicate with a computer. The basic input output system is in communication with the network interface card, and is configured to store a model number and identification data for the projector. The service set identifier module is in communication with the basic input output system, and is configured to retrieve the model number and the identification data, and to utilize the model number and the identification data to create a unique service set identifier for the projector.
Abstract:
According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.
Abstract:
The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
Abstract:
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
Abstract translation:提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源,流动气体,硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10×10 6离子/ cm 3的等离子体。 氧化硅膜以低于1.0%的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺,用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。
Abstract:
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
Abstract translation:提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF4,H2,硅源和氧化性气体反应物的工艺气体流入处理室。 从工艺气体形成具有至少10 11 / cm 3离子密度的等离子体。 使用具有同时沉积和溅射组分的工艺,用等离子体在衬底上沉积未掺杂的氧化硅膜。 在这种沉积过程中,衬底的温度大于450℃
Abstract:
A method and an apparatus for shaping the output traffic in the transmit part of a network node adapter. The network node supports fixed length cell switching user information traffic between a source unit and a destination unit. The method and apparatus use two lookup tables called an active and a standby calendar per output line. Each entry in the calendars represents the position of one cell in the output cell stream. Three parameters tables are used to store the information on user traffic in the descending order of the user bandwidth share negotiated at traffic establishment time for the calendars. The active calendar is continuously read by a transmit device and the corresponding cells are sent onto the output line. Under control of a control device, a placement device places entries in the standby calendar reserved as changes occur in the traffic. Once filled up, the standby calendar is swapped to the active calendar and is read by the transmit device.
Abstract:
A projector includes a network interface card, a basic input output system, and a service set identifier module. The network interface card is configured to communicate with a computer. The basic input output system is in communication with the network interface card, and is configured to store a model number and identification data for the projector. The service set identifier module is in communication with the basic input output system, and is configured to retrieve the model number and the identification data, and to utilize the model number and the identification data to create a unique service set identifier for the projector.